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Papers by Manoj Ramachandran
Proceedings of SPIE, May 12, 2004
beta-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indiu... more beta-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indium films in H2S atmosphere. The effect of sulphurisation temperature and time on the growth of single phase In2S3 and its electrical and optical properties have been investigated. The influences of processing parameters on the electrical and optical properties have been studied. The band gaps
Environmental Progress & Sustainable Energy, 2022
World Conference on Photovoltaic Energy Conversion, Oct 10, 2011
Tin Selenide (SnSe) and tin diselenide (SnSe2) thin films have been deposited on non-conducting g... more Tin Selenide (SnSe) and tin diselenide (SnSe2) thin films have been deposited on non-conducting glass substrates by ultrasonic spray pyrolysis (USP) at different temperatures, using 0.05M solution of SnCl2 and 0.05M solution of n-n dimethyl selenourea as precursors of Sn and Se, respectively diluted in deionized water. XRD and AFM techniques were used for identifying the compound and structural characterization, while four point probe Hall Effect techniques was used for the electrical characterization.
Surveying I April 2003. DigitalLibrary@CUSAT. ...
J. Univers. Comput. Sci., 2013
In this paper, an improved Simulated Annealing algorithm for Protein Fold- ing Problem (PFP) is p... more In this paper, an improved Simulated Annealing algorithm for Protein Fold- ing Problem (PFP) is presented. This algorithm called Cluster Perturbation Simulated Annealing (CPSA) is based on a brand new scheme to generate new solutions using a cluster perturbation. The algorithm is divided into two phases: Cluster Perturbation Phase and the Reheat Phase. The first phase obtains a good solution in a small amount of time, and it is applied at very high temperatures. The second phase starts with a threshold temperature and reheats the system for a better exploration. CPSA reduces the execution time of the Simulated Annealing Algorithm without sacrificing quality to find a native structure in PFP in Ab-Initio approaches.
... Symposium,Thiruvanthapuram, India (2002) P423 4. Preparation of ZnO.Ga thin films by pulsed l... more ... Symposium,Thiruvanthapuram, India (2002) P423 4. Preparation of ZnO.Ga thin films by pulsed laser deposition, Vineeth.C, Manoj ... by The Sulphurisation of Evaporated Indium Films, Rahana Yoosuf, Jerome Kalloor Cheekku, Aldrin Antony, Manoj Ramachandran and Madambi ...
Advances in Thin-Film Coatings for Optical Applications III, 2006
Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed l... more Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by
beta-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indiu... more beta-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indium films in H2S atmosphere. The effect of sulphurisation temperature and time on the growth of single phase In2S3 and its electrical and optical properties have been investigated. The influences of processing parameters on the electrical and optical properties have been studied. The band gaps
Solar Energy Materials and Solar Cells, 2004
The structural, electrical and optical properties of copper–indium alloys sulphurised in H2S atmo... more The structural, electrical and optical properties of copper–indium alloys sulphurised in H2S atmosphere have been studied by varying the thermal cycle of the sulphurisation process. Cu–In alloy prepared by elemental evaporation of copper and indium was used as the precursor for sulphurisation. The chalcopyrite CuInS2 phase was found at sulphurisation temperature as low as 250°C and single phase at sulphurisation
Journal of Semiconductors, 2013
Surface and Coatings Technology, 2005
Zinc gallate (ZnGa2O4) phosphor thin films have been deposited by pulsed laser deposition (PLD) t... more Zinc gallate (ZnGa2O4) phosphor thin films have been deposited by pulsed laser deposition (PLD) technique on amorphous silica and glass substrates at room temperature at various oxygen pressures. The films were deposited from presintered targets prepared by solid-state reaction of constituent oxides at elevated temperature. The photoluminescent (PL) emission studies on manganese-doped zinc gallate powder phosphors show green emission (504
Materials Chemistry and Physics, 2005
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
Current Applied Physics, 2010
... Full Text via CrossRef | View Record in Scopus | Cited By in Scopus (39). [7] KA Vanaja, RS A... more ... Full Text via CrossRef | View Record in Scopus | Cited By in Scopus (39). [7] KA Vanaja, RS Ajimsha, AS Asha and MK Jayaraj, Appl. Phys. Lett. 88 (2006), p. 1. [8] RS Ajimsha, KA Vanaja, MK Jayaraj, P. Misra, VK Dixit and LM Kukreja, Thin Solid Films 515 (2007), p. 7352. ...
Bulletin of Materials Science, 2002
Bulletin of Materials Science, 2008
Applied Surface Science, 2004
Proceedings of SPIE, May 12, 2004
beta-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indiu... more beta-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indium films in H2S atmosphere. The effect of sulphurisation temperature and time on the growth of single phase In2S3 and its electrical and optical properties have been investigated. The influences of processing parameters on the electrical and optical properties have been studied. The band gaps
Environmental Progress & Sustainable Energy, 2022
World Conference on Photovoltaic Energy Conversion, Oct 10, 2011
Tin Selenide (SnSe) and tin diselenide (SnSe2) thin films have been deposited on non-conducting g... more Tin Selenide (SnSe) and tin diselenide (SnSe2) thin films have been deposited on non-conducting glass substrates by ultrasonic spray pyrolysis (USP) at different temperatures, using 0.05M solution of SnCl2 and 0.05M solution of n-n dimethyl selenourea as precursors of Sn and Se, respectively diluted in deionized water. XRD and AFM techniques were used for identifying the compound and structural characterization, while four point probe Hall Effect techniques was used for the electrical characterization.
Surveying I April 2003. DigitalLibrary@CUSAT. ...
J. Univers. Comput. Sci., 2013
In this paper, an improved Simulated Annealing algorithm for Protein Fold- ing Problem (PFP) is p... more In this paper, an improved Simulated Annealing algorithm for Protein Fold- ing Problem (PFP) is presented. This algorithm called Cluster Perturbation Simulated Annealing (CPSA) is based on a brand new scheme to generate new solutions using a cluster perturbation. The algorithm is divided into two phases: Cluster Perturbation Phase and the Reheat Phase. The first phase obtains a good solution in a small amount of time, and it is applied at very high temperatures. The second phase starts with a threshold temperature and reheats the system for a better exploration. CPSA reduces the execution time of the Simulated Annealing Algorithm without sacrificing quality to find a native structure in PFP in Ab-Initio approaches.
... Symposium,Thiruvanthapuram, India (2002) P423 4. Preparation of ZnO.Ga thin films by pulsed l... more ... Symposium,Thiruvanthapuram, India (2002) P423 4. Preparation of ZnO.Ga thin films by pulsed laser deposition, Vineeth.C, Manoj ... by The Sulphurisation of Evaporated Indium Films, Rahana Yoosuf, Jerome Kalloor Cheekku, Aldrin Antony, Manoj Ramachandran and Madambi ...
Advances in Thin-Film Coatings for Optical Applications III, 2006
Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed l... more Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by
beta-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indiu... more beta-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indium films in H2S atmosphere. The effect of sulphurisation temperature and time on the growth of single phase In2S3 and its electrical and optical properties have been investigated. The influences of processing parameters on the electrical and optical properties have been studied. The band gaps
Solar Energy Materials and Solar Cells, 2004
The structural, electrical and optical properties of copper–indium alloys sulphurised in H2S atmo... more The structural, electrical and optical properties of copper–indium alloys sulphurised in H2S atmosphere have been studied by varying the thermal cycle of the sulphurisation process. Cu–In alloy prepared by elemental evaporation of copper and indium was used as the precursor for sulphurisation. The chalcopyrite CuInS2 phase was found at sulphurisation temperature as low as 250°C and single phase at sulphurisation
Journal of Semiconductors, 2013
Surface and Coatings Technology, 2005
Zinc gallate (ZnGa2O4) phosphor thin films have been deposited by pulsed laser deposition (PLD) t... more Zinc gallate (ZnGa2O4) phosphor thin films have been deposited by pulsed laser deposition (PLD) technique on amorphous silica and glass substrates at room temperature at various oxygen pressures. The films were deposited from presintered targets prepared by solid-state reaction of constituent oxides at elevated temperature. The photoluminescent (PL) emission studies on manganese-doped zinc gallate powder phosphors show green emission (504
Materials Chemistry and Physics, 2005
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
Current Applied Physics, 2010
... Full Text via CrossRef | View Record in Scopus | Cited By in Scopus (39). [7] KA Vanaja, RS A... more ... Full Text via CrossRef | View Record in Scopus | Cited By in Scopus (39). [7] KA Vanaja, RS Ajimsha, AS Asha and MK Jayaraj, Appl. Phys. Lett. 88 (2006), p. 1. [8] RS Ajimsha, KA Vanaja, MK Jayaraj, P. Misra, VK Dixit and LM Kukreja, Thin Solid Films 515 (2007), p. 7352. ...
Bulletin of Materials Science, 2002
Bulletin of Materials Science, 2008
Applied Surface Science, 2004