Azer Sadigov | Azerbaijan National Academy of Sciences (original) (raw)
Papers by Azer Sadigov
This paper is devoted to gamma-ray detection performance of the newly developed MAPD-3NM-II type ... more This paper is devoted to gamma-ray detection performance of the newly developed MAPD-3NM-II type SiPM sensor array (4x4) with LaBr3(Ce) scintillator. The gamma-ray spectra of various sources have been measured in the energy range from 26 keV up to 1332 keV. The newly developed array based on MAPD-3NM-II sensors proved ∼22 % enhancement in energy resolution in comparison to the former MAPD-3NM-I based array. The energy resolution of 662 keV gamma-rays measured by MAPD-3NM-II was 3.3 % while clearly surpassing 4.25 % resolution of MAPD-3NM-I predecessor. The enhancement is related to the high PDE of the new MAPD-3NM-II. Obtained results show that the new MAPD-3NM-II demonstrated good energy resolution and linearity in the studied energy region. The energy resolution of the new detector developed based on MAPD-3NM-II was better than all previous products of MAPD.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2020
Abstract The new pocket size read-out interface device dedicated for silicon photomultipliers (Si... more Abstract The new pocket size read-out interface device dedicated for silicon photomultipliers (SiPM) has been designed and developed. While it was designed as a miniaturized and low power device it still provides a wide spectrum of functionality necessary for measurements and testing of SiPMs and SiPM based detectors. Full signal processing has been integrated within the device involving variable gain amplification, filtration and digitization. Signal acquisition can be performed with sampling frequency 400 MSa/s at 12 bit resolution or 600 MSa/s at 8 bit resolution while achieving full waveform capture & download rate about 20 000 events per second. The read-out interface is fully powered from the USB bus allowing operation without need of additional power line connection. An integrated bias source can be set in range from 0V to +200V with 12 bit precision. The read-out interface is primarily dedicated for spectroscopy purposes. There are two input signal channels with different optimization regarding the signal gain to cover a low energy range corresponding to single photo-electron detector response as well as to cover a high energy range corresponding to a detector response operated with scintillator registering gamma radiation in order of MeVs. Both input channels are equipped with fine gain adjustment in range from -9 dB to 26 dB with 1 dB step in addition to the fixed gain of each signal channel. The FPGA based design of the read-out interface allowed implementation of advanced triggering functionality like a data driven trigger, external trigger, gating of trigger to extend read-out interface capability even further in a way of complex experiments. A set of functional tests and experiments with SiPM called micropixel avalanche photodiode (MAPD) and MAPD based detectors have been performed to characterize real properties of the read-out interface.
RAP 2019 Conference Proceedings, 2020
The Silicon PIN photodiodes (Si-PIN) with an active area of 5.0 x 5.0 mm 2 were designed and fabr... more The Silicon PIN photodiodes (Si-PIN) with an active area of 5.0 x 5.0 mm 2 were designed and fabricated by using a conventional photolithography process at the Center of Nuclear Radiation Detectors Research and Application (NÜRDAM) for the investigation of electrical characteristics and alpha particle detection performance. To obtain the device electrical specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. The Si-PIN photodiode was then used to detect alpha particles from different radioactive sources in a vacuum at room temperature. Photodiode dark current and capacitance were measured and found to be-20 nA and 23pF, respectively, at-20 Volts (the operating voltage used during alpha particle detection). The possibilities of improving the parameters of the photodiode are discussed.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2018
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2017
Abstract This paper presents results of studies of the silicon based new micropixel avalanche pho... more Abstract This paper presents results of studies of the silicon based new micropixel avalanche phototransistor (MAPT). MAPT is a modification of well-known silicon photomultipliers (SiPMs) and differs since each photosensitive pixel of the MAPT operates in Geiger mode and comprises an individual micro-transistor operating in binary mode. This provides a high amplitude single photoelectron signal with significantly shorter rise time. The obtained results are compared with appropriate parameters of known SiPMs.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2018
This work presents the fast neutron detection performance of two different silicon photomultiplie... more This work presents the fast neutron detection performance of two different silicon photomultipliers from two manufacturers. Fist SiMP (MAPD-3NK) from Zecotek Photonics consists of deeply burned cells and have an active area of 3.7x3.7 mm 2. The second one (MPPC-S12572-010P) from Hamamatsu, however, has surface cell structure and an active area of 3x3 mm 2. Both SiMPs have the same pixel density of 10000 mm-2. Both SIPMs coupled to Stilbene (5*5*5 mm 3) and p-terphenyl (5*5*5 mm 3) plastic scintillators were tested using a PuBe neutron source. Charge comparison and zero crossing n/g discrimination techniques were performed for the detectors and obtained results were compared. Obtained results indicated good fast neutron detection performance of the SiPMs and give a possibility to use these type of neutron detectors in fast neutron detection applications.
In this study, we present the gamma-ray detection performance of LYSO, YSO(Ce) and BGO scintillat... more In this study, we present the gamma-ray detection performance of LYSO, YSO(Ce) and BGO scintillators read out by a 9 ch. micropixel avalanche photodiode (MAPD) array with a high pixel density (PD) and photon detection efficiency (PDE). The array with an active area of 11.5 × 11.5 mm 2 was assembled using single MAPDs with an active area of 3.7 × 3.7 mm 2. It had a single output signal and was developed for gamma spectroscopy. Breakdown voltage measurements were carried out for each channel, as a result of which the optimal operating voltage for the array was found. The linearity range and energy resolution for each crystal were determined in the energy range from 30 to 1770 keV. The high pixel density of the array allowed to achieve good linearity in the studied energy range.
During the work, two types of Micropixel Avalanche Photodiodes (MAPD) were irradiated with five d... more During the work, two types of Micropixel Avalanche Photodiodes (MAPD) were irradiated with five doses of protons with an energy of 150 MeV. The first type of MAPD sample (type-MP-3d with a sensitive surface of 1mm * 1mm) had a surface pixel structure. In the scientific literature, such devices are often referred to as silicon photomultipliers (SiPM). The s econd type of MAPD sample (type-MAPD-3K0 with a sensitive surface of 3.7 mm * 3.7 mm) had a deep burring pixel structure [1, 2, 3, 4]. The proton doses received by the photodiodes were 2 * 10 10 proton / cm 2 , 5.5 * 10 10 proton / cm 2 , 1 * 10 11 proton / cm 2 , 6.5 * 10 11 proton / cm 2 , 1 * 10 12 proton / cm 2 , 5 * 10 12 proton / cm 2. Irradiation with protons of two types of MAPD is due to the fact that their design and principle of operation are very different from each other. Studies have shown that deep burring pixel structures have a radiation hardness of more than 10 times compared to the surface pixel structure.
The article presents the results of the study of optical characteristics and the calculation of t... more The article presents the results of the study of optical characteristics and the calculation of the internal gain of a new micropixel avalanche photodiode (MAPD). The calculation procedure is described, the experimental setup of the performed studies, and the results of the study of parameters at low light fluxes, up to single photons, are also presented. It was revealed that avalanche photodiodes with a micropixel structure can be silicon analogs of widely used vacuum photomultiplier tubes.
Aviakosmik məsələlərin həllində gənclərin yaradıcı potensialı" V beynəlxalq elmi-praktiki gənclər... more Aviakosmik məsələlərin həllində gənclərin yaradıcı potensialı" V beynəlxalq elmi-praktiki gənclər konfransının MATERİALLARI Bakı, 03-05 fevral 2020-ci il Milli Aviasiya Akademiyası Fevral məruzələri-2020, Bakı-2-UDK 629.7 Redaktor X.İ. Abdullayev "Fevral məruzələri-2020: Aviakosmik məsələlərin həllində gənclərin yaradıcı potensialı" V Beynəlxalq elmi-praktiki gənclər konfransının materialları. Bakı, Azərbaycan, 03-05 fevral 2020-ci il. "Azərbaycan Hava Yolları" QSC-nin Poliqrafiya Mərkəzi.
The results of studies of MAPD-3NK and MAPD-3NM with deep-immersed pixel arrangement, manufacture... more The results of studies of MAPD-3NK and MAPD-3NM with deep-immersed pixel arrangement, manufactured by Zecotek were presented. The volt-ampere and capacitance-voltage characteristics, gain and breakdown voltage of photodiodes were investigated by experimental methods.
This work summarizes a fast neutron detection performance of two different silicon photomultiplie... more This work summarizes a fast neutron detection performance of two different silicon photomultipliers from two manufacturers. The first SiPM (MAPD-3NK) from Zecotek Photonics consists of deeply buried cells with the active area 3.7x3.7 mm 2. The second one (MPPC-S12572-010P) from Hamamatsu, however, consists of surface cell structure which the active area is 3x3 mm 2. Both SiPMs have the same pixel density of 10000 mm-2. Both SiPMs coupled to Stilbene (5*5*5 mm 3) and p-terphenyl (5*5*5 mm 3) plastic scintillators were evaluated for detection ability of fast neutrons using a PuBe neutron source. Charge comparison and zero crossing neutron/gamma discrimination techniques were performed for these detectors and the results were compared. The obtained results prove a good fast neutron detection performance of the SiPMs which makes it possible to use these types of neutron detectors in fast neutron detection applications.
Получено аналитическое выражение фотоотклика лавинных фотодиодов в предположении равенства коэффи... more Получено аналитическое выражение фотоотклика лавинных фотодиодов в предположении равенства коэффициентов ионизации для электронов и дырок. Полученное выражение позволяет исследовать и оптимизировать форму фотоотклика лавинных фотодиодов.
This paper is devoted to gamma-ray detection performance of the newly developed MAPD-3NM-II type ... more This paper is devoted to gamma-ray detection performance of the newly developed MAPD-3NM-II type SiPM sensor array (4x4) with LaBr3(Ce) scintillator. The gamma-ray spectra of various sources have been measured in the energy range from 26 keV up to 1332 keV. The newly developed array based on MAPD-3NM-II sensors proved ∼22 % enhancement in energy resolution in comparison to the former MAPD-3NM-I based array. The energy resolution of 662 keV gamma-rays measured by MAPD-3NM-II was 3.3 % while clearly surpassing 4.25 % resolution of MAPD-3NM-I predecessor. The enhancement is related to the high PDE of the new MAPD-3NM-II. Obtained results show that the new MAPD-3NM-II demonstrated good energy resolution and linearity in the studied energy region. The energy resolution of the new detector developed based on MAPD-3NM-II was better than all previous products of MAPD.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2020
Abstract The new pocket size read-out interface device dedicated for silicon photomultipliers (Si... more Abstract The new pocket size read-out interface device dedicated for silicon photomultipliers (SiPM) has been designed and developed. While it was designed as a miniaturized and low power device it still provides a wide spectrum of functionality necessary for measurements and testing of SiPMs and SiPM based detectors. Full signal processing has been integrated within the device involving variable gain amplification, filtration and digitization. Signal acquisition can be performed with sampling frequency 400 MSa/s at 12 bit resolution or 600 MSa/s at 8 bit resolution while achieving full waveform capture & download rate about 20 000 events per second. The read-out interface is fully powered from the USB bus allowing operation without need of additional power line connection. An integrated bias source can be set in range from 0V to +200V with 12 bit precision. The read-out interface is primarily dedicated for spectroscopy purposes. There are two input signal channels with different optimization regarding the signal gain to cover a low energy range corresponding to single photo-electron detector response as well as to cover a high energy range corresponding to a detector response operated with scintillator registering gamma radiation in order of MeVs. Both input channels are equipped with fine gain adjustment in range from -9 dB to 26 dB with 1 dB step in addition to the fixed gain of each signal channel. The FPGA based design of the read-out interface allowed implementation of advanced triggering functionality like a data driven trigger, external trigger, gating of trigger to extend read-out interface capability even further in a way of complex experiments. A set of functional tests and experiments with SiPM called micropixel avalanche photodiode (MAPD) and MAPD based detectors have been performed to characterize real properties of the read-out interface.
RAP 2019 Conference Proceedings, 2020
The Silicon PIN photodiodes (Si-PIN) with an active area of 5.0 x 5.0 mm 2 were designed and fabr... more The Silicon PIN photodiodes (Si-PIN) with an active area of 5.0 x 5.0 mm 2 were designed and fabricated by using a conventional photolithography process at the Center of Nuclear Radiation Detectors Research and Application (NÜRDAM) for the investigation of electrical characteristics and alpha particle detection performance. To obtain the device electrical specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. The Si-PIN photodiode was then used to detect alpha particles from different radioactive sources in a vacuum at room temperature. Photodiode dark current and capacitance were measured and found to be-20 nA and 23pF, respectively, at-20 Volts (the operating voltage used during alpha particle detection). The possibilities of improving the parameters of the photodiode are discussed.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2018
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2017
Abstract This paper presents results of studies of the silicon based new micropixel avalanche pho... more Abstract This paper presents results of studies of the silicon based new micropixel avalanche phototransistor (MAPT). MAPT is a modification of well-known silicon photomultipliers (SiPMs) and differs since each photosensitive pixel of the MAPT operates in Geiger mode and comprises an individual micro-transistor operating in binary mode. This provides a high amplitude single photoelectron signal with significantly shorter rise time. The obtained results are compared with appropriate parameters of known SiPMs.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2018
This work presents the fast neutron detection performance of two different silicon photomultiplie... more This work presents the fast neutron detection performance of two different silicon photomultipliers from two manufacturers. Fist SiMP (MAPD-3NK) from Zecotek Photonics consists of deeply burned cells and have an active area of 3.7x3.7 mm 2. The second one (MPPC-S12572-010P) from Hamamatsu, however, has surface cell structure and an active area of 3x3 mm 2. Both SiMPs have the same pixel density of 10000 mm-2. Both SIPMs coupled to Stilbene (5*5*5 mm 3) and p-terphenyl (5*5*5 mm 3) plastic scintillators were tested using a PuBe neutron source. Charge comparison and zero crossing n/g discrimination techniques were performed for the detectors and obtained results were compared. Obtained results indicated good fast neutron detection performance of the SiPMs and give a possibility to use these type of neutron detectors in fast neutron detection applications.
In this study, we present the gamma-ray detection performance of LYSO, YSO(Ce) and BGO scintillat... more In this study, we present the gamma-ray detection performance of LYSO, YSO(Ce) and BGO scintillators read out by a 9 ch. micropixel avalanche photodiode (MAPD) array with a high pixel density (PD) and photon detection efficiency (PDE). The array with an active area of 11.5 × 11.5 mm 2 was assembled using single MAPDs with an active area of 3.7 × 3.7 mm 2. It had a single output signal and was developed for gamma spectroscopy. Breakdown voltage measurements were carried out for each channel, as a result of which the optimal operating voltage for the array was found. The linearity range and energy resolution for each crystal were determined in the energy range from 30 to 1770 keV. The high pixel density of the array allowed to achieve good linearity in the studied energy range.
During the work, two types of Micropixel Avalanche Photodiodes (MAPD) were irradiated with five d... more During the work, two types of Micropixel Avalanche Photodiodes (MAPD) were irradiated with five doses of protons with an energy of 150 MeV. The first type of MAPD sample (type-MP-3d with a sensitive surface of 1mm * 1mm) had a surface pixel structure. In the scientific literature, such devices are often referred to as silicon photomultipliers (SiPM). The s econd type of MAPD sample (type-MAPD-3K0 with a sensitive surface of 3.7 mm * 3.7 mm) had a deep burring pixel structure [1, 2, 3, 4]. The proton doses received by the photodiodes were 2 * 10 10 proton / cm 2 , 5.5 * 10 10 proton / cm 2 , 1 * 10 11 proton / cm 2 , 6.5 * 10 11 proton / cm 2 , 1 * 10 12 proton / cm 2 , 5 * 10 12 proton / cm 2. Irradiation with protons of two types of MAPD is due to the fact that their design and principle of operation are very different from each other. Studies have shown that deep burring pixel structures have a radiation hardness of more than 10 times compared to the surface pixel structure.
The article presents the results of the study of optical characteristics and the calculation of t... more The article presents the results of the study of optical characteristics and the calculation of the internal gain of a new micropixel avalanche photodiode (MAPD). The calculation procedure is described, the experimental setup of the performed studies, and the results of the study of parameters at low light fluxes, up to single photons, are also presented. It was revealed that avalanche photodiodes with a micropixel structure can be silicon analogs of widely used vacuum photomultiplier tubes.
Aviakosmik məsələlərin həllində gənclərin yaradıcı potensialı" V beynəlxalq elmi-praktiki gənclər... more Aviakosmik məsələlərin həllində gənclərin yaradıcı potensialı" V beynəlxalq elmi-praktiki gənclər konfransının MATERİALLARI Bakı, 03-05 fevral 2020-ci il Milli Aviasiya Akademiyası Fevral məruzələri-2020, Bakı-2-UDK 629.7 Redaktor X.İ. Abdullayev "Fevral məruzələri-2020: Aviakosmik məsələlərin həllində gənclərin yaradıcı potensialı" V Beynəlxalq elmi-praktiki gənclər konfransının materialları. Bakı, Azərbaycan, 03-05 fevral 2020-ci il. "Azərbaycan Hava Yolları" QSC-nin Poliqrafiya Mərkəzi.
The results of studies of MAPD-3NK and MAPD-3NM with deep-immersed pixel arrangement, manufacture... more The results of studies of MAPD-3NK and MAPD-3NM with deep-immersed pixel arrangement, manufactured by Zecotek were presented. The volt-ampere and capacitance-voltage characteristics, gain and breakdown voltage of photodiodes were investigated by experimental methods.
This work summarizes a fast neutron detection performance of two different silicon photomultiplie... more This work summarizes a fast neutron detection performance of two different silicon photomultipliers from two manufacturers. The first SiPM (MAPD-3NK) from Zecotek Photonics consists of deeply buried cells with the active area 3.7x3.7 mm 2. The second one (MPPC-S12572-010P) from Hamamatsu, however, consists of surface cell structure which the active area is 3x3 mm 2. Both SiPMs have the same pixel density of 10000 mm-2. Both SiPMs coupled to Stilbene (5*5*5 mm 3) and p-terphenyl (5*5*5 mm 3) plastic scintillators were evaluated for detection ability of fast neutrons using a PuBe neutron source. Charge comparison and zero crossing neutron/gamma discrimination techniques were performed for these detectors and the results were compared. The obtained results prove a good fast neutron detection performance of the SiPMs which makes it possible to use these types of neutron detectors in fast neutron detection applications.
Получено аналитическое выражение фотоотклика лавинных фотодиодов в предположении равенства коэффи... more Получено аналитическое выражение фотоотклика лавинных фотодиодов в предположении равенства коэффициентов ионизации для электронов и дырок. Полученное выражение позволяет исследовать и оптимизировать форму фотоотклика лавинных фотодиодов.