Gong-Ru Lin | National Taiwan University (original) (raw)

Papers by Gong-Ru Lin

Optical Amplifiers and Their Applications, 2003

Optical and electrical pulse modulation induced actively harmonic mode-locking of Erbium-doped fi... more Optical and electrical pulse modulation induced actively harmonic mode-locking of Erbium-doped fiber ring lasers are demonstrated. Comparisons between these two configurations such as output stability, build-up dynamics, and frequency characteristics are reported as well.

Asia Communications and Photonics Conference, 2012

Based on the finite potential well approximation and effective masses modification, the bandgap e... more Based on the finite potential well approximation and effective masses modification, the bandgap energy of Si-QD is derived as Eg(d)=1.12+5.83/d1.78 (eV). The luminescent mechanisms of SiOx have been differentiated by PL and TRPL measurements.

Asia Communications and Photonics Conference, 2012

Based on the finite potential well approximation and effective masses modification, the bandgap e... more Based on the finite potential well approximation and effective masses modification, the bandgap energy of Si-QD is derived as Eg(d)=1.12+5.83/d1.78 (eV). The luminescent mechanisms of SiOx have been differentiated by PL and TRPL measurements.

Asia Communications and Photonics Conference, 2012

Based on the finite potential well approximation and effective masses modification, the bandgap e... more Based on the finite potential well approximation and effective masses modification, the bandgap energy of Si-QD is derived as Eg(d)=1.12+5.83/d1.78 (eV). The luminescent mechanisms of SiOx have been differentiated by PL and TRPL measurements.

A 40-GHz photonic microwave clock with 0.11 ps timing jitter is demonstrated by using fractional ... more A 40-GHz photonic microwave clock with 0.11 ps timing jitter is demonstrated by using fractional Talbot effect to obtain a frequency-doubling of 10-GHz pulse injection induced the 2nd-order rational-harmonic-mode-locking (RHML) of a SOA fiber laser.

Ultrafast Phenomena in Semiconductors Ii, 1998

Arsenic-ion-implanted GaAs (or GaAs:As), with excess-arsenic-related deep level defects, has rece... more Arsenic-ion-implanted GaAs (or GaAs:As), with excess-arsenic-related deep level defects, has recently emerged as a potential alternative to low-temperature molecularbeam-epitaxy (LTMBE) grown GaAs for ultrafast optoelectronic applications. In this paper, we review results of our structural, ultrafast optical and optoelectronic investigations of as-implanted and thermally annealed GaAs:As. Picosecond photoconductive switching responses are reported for devices fabricated on thermallyannealed low-dose and high-dose implanted GaAs:As. Novel sign reversals in nearbandgap ultrafast optical responses were observed and explained.

RSC Advances, 2015

An amorphous Si-rich SiC film with nearly warm white-light photoluminescence is synthesized to se... more An amorphous Si-rich SiC film with nearly warm white-light photoluminescence is synthesized to serve as a solid-state phosphorous material for white-lighting applications.

Current Nanoscience, Apr 2, 2020

This paper emphasizes on overviewing the developing progress of the state-of-the-art carbon nanom... more This paper emphasizes on overviewing the developing progress of the state-of-the-art carbon nanomaterial-based saturable absorbers for passively mode-locked fiber lasers, including carbon nanotube (CNT), graphene, graphite and other carbon nanomaterials. With reviewing the performances of these proposed candidates, the characteristic parameters required for initiating and stabilizing the passive mode-locked fiber lasers are summarized for comparison and discussion. At first, the basic characteristics such as saturation intensity and self-amplitude-modulation (SAM) coefficients of the CNT material with different-wall types are discussed in detail. In comparison, the single-wall CNT possesses optical nonlinearity better than double-wall CNT, whereas the doublewall CNT exhibits wavelength tenability and the multi-wall CNT fails to initiate mode-locking. Subsequently, different graphene saturable absorbers with slightly changing their optical properties made by various fabrication technologies are introduced to take over the role of typical CNT saturable absorber. The detailed analyses on graphene saturable absorber for developing various types of passively mode-locked fiber lasers are overviewed. At last, other new-aspect graphite and carbon nanomaterials related saturable absorbers have emerged because they reveal similar optical nonlinearity with graphene but exhibit cost-effectiveness and easy-production. When changing saturable absorber from graphene to other carbon nanomaterials, the modulation depth is decreased but the saturation intensity is concurrently enlarged because of the disordered structure with increased interlayer spacing and reduced graphene content. At the current stage, selecting carbon nanomaterials with high nonlinear absorbance and low saturated intensity for large SAM coefficient is the golden rule for passively mode-locked the fiber lasers in future academic and industrial applications.

Conference on Lasers and Electro-Optics, 2022

All-optical intensity modulator at 25 Gbps in silicon carbide-based Kerr switching with a nonline... more All-optical intensity modulator at 25 Gbps in silicon carbide-based Kerr switching with a nonlinear refractive index of 2.88×10-13 cm2/W is demonstrated with an SNR of 5.6 dB and an ER of 11.8 dB.

IEEE Journal of Selected Topics in Quantum Electronics, Mar 1, 2016

The Si quantum dot doped SiO x rib waveguide based free-carrier absorption modulator with enhance... more The Si quantum dot doped SiO x rib waveguide based free-carrier absorption modulator with enhanced all-optical modulation depth is demonstrated by integrating with a micro-ring waveguide resonator. The micro-ring waveguide resonator with a Q-factor of 6x10 3 induces a throughput transfer function in wavelength domain, such a transmittance notch can be blue-shifted by varying the excited free-carrier density of Si-QD. When injecting the continuous-wave probe at central wavelength of the transmittance notch, the probe signal can be inversely modulated by optically pumping the micro-ring waveguide resonator to blue-shift the notch away from its original wavelength. By optimizing the pump wavelengths, the largest free-carrier absorption (FCA) loss and highest free-carrier density can be enhanced to 2.9 cm-1 and 7.83×10 16 cm-3 , respectively. With the excited free-carrier density of ~1.3×10 16 cm-3 inside the micro-ring waveguide, the maximal wavelength of the transmittance notch can be blue-shifted by 0.033 nm. The optical pumping also induces the broadened linewidth of transmittance notch from 0.25 to 0.27 nm. With the integrated micro-ring waveguide resonator, the all-optical modulation depth can be further enhanced from 52.5% to 63.5% by shifting the notched transmission spectrum of the micro-ring waveguide with the excited free-carrier density of Si-QD at probe wavelength of 1563.5 nm.

APL photonics, Aug 1, 2022

Group-IV semiconductor compounds with intense optical nonlinearity have emerged as a new branch o... more Group-IV semiconductor compounds with intense optical nonlinearity have emerged as a new branch of all-optical processing materials benefiting from the manufacturing compatibility with silicon electronic and photonic integrated circuits. Owing to the chemical reforming on the bonding or precipitating feature of the compositional atoms in the membrane matrix, either the orbital hybridization or the quantum self-assembly of interstitial composites can be employed to reform the electronic and optical characteristics. The recent development on enhancing the nonlinear refractive indices of the group-IV semiconductor materials has revealed significant progress to accelerate the all-optical switching logic, which greatly reduces the energy consumption to enable the constitution of the advanced multi-logic gating and the entry-level photonic computing circuits. This work not only overviews the Group-IV semiconductor photonic data processing elements but also prospects for the future direction of optical quantum computation and communication. To date, the nonlinear refractive indices of the group-IV semiconductor materials can be obtained as 10-8-10-16 cm 2 /W in the range between 300 nm to 10000 nm in 2022. The wavelength conversion and data switching with bit rate beyond 25 Gbps have been achieved via nonlinear photonic waveguide components. By taking the nonstoichiometric SiC-made micro-ring waveguide as an example, the n2 as high as 3.05×10-14 cm 2 /W of the resonant SiC micro-ring gate is retrieved from the pump-probe analysis. The eyediagram of the wavelength converted data in the micro-ring achieves its signal-to-noise and on/off-extinction ratios (SNR and ER) of 5.6 dB and 11.8 dB, while up to 25-Gbps all-optical data-format inversion with 4.8-dB SNR and 10.2-dB ER is also performed during an ultrafast switching within rising and falling time of less than 22 ps. Such all-optical data processing including both wavelength switching and format conversion in the highly nonlinear optical SiC waveguide resonator can achieve error-free operation with corresponding bit-error-ratios of lower than 1×10-5 at 25 Gbps after forward error correction.

ECS Journal of Solid State Science and Technology, 2012

ABSTRACT In contrast to silicon-based p-n junction photovoltaic solar cells (PVSCs), a silicon ri... more ABSTRACT In contrast to silicon-based p-n junction photovoltaic solar cells (PVSCs), a silicon rich silicon carbide (SixC1-x)-based thin-film PVSC with enhanced absorption at the visible wavelength region. The silicon rich SixC1-x films are synthesized by using a low-substrate temperature and low-power plasma-enhanced chemical vapor (PECVD) system in a silane-rich environment. The molar ratio of the silicon atoms in SixC1-x grown at 500 degrees C was tunable from 0.63 to 0.66 when reducing RF plasma power from 100 to 20 W. The low-plasma PECVD growth gave the SixC1-x an enhanced broadband absorption at 400-600 nm, where the highest optical absorption coefficient was 1.3x10(5) cm(-1). The silicon rich composition also reduced the optical bandgap energy from 2.05 to 1.49 eV. This type of red-shifted cutoff wavelength promoted solar energy conversion at the near-infrared region. Consequently, an ITO/p-SixC1-x/n-SixC1-x/A1 PVSC with a silicon molar ratio of 66% enhanced its conversion efficiency from 5 x 10(-3) to 4.7% when the n-type SixC1-x thickness was reduced from 150 to 25 nm, which is attributed to the reduced series resistance to 0.6 Omega and the increased shunt resistance to 1500 Omega.

All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using... more All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH₄]/[CH₄+SiH₄] fluence ratio of 50%, the i-Si_xC_1-x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×10⁵ cm^-1. The open-circuit voltage and short-circuit current of the Si-rich Si_0.67C_0.33/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm² with the conversion efficiency and filling factor to 5.51% and 27%, respectively.

We reported the light enhancement obtained from a Si-nanocrystals-embedded SiO x film on a silico... more We reported the light enhancement obtained from a Si-nanocrystals-embedded SiO x film on a silicon-on-insulator (SOI) and Si substrates in visible light range. A strong emission from the SOI substrate was observed due to the better optical confinement. We also compare the vertical distribution of the electric field in vertical direction of the two structures.

Journal of Materials Chemistry C, 2015

The optical nonlinearity of the nonstoichiometric silicon carbide with a variable C/Si compositio... more The optical nonlinearity of the nonstoichiometric silicon carbide with a variable C/Si composition ratio is studied. The significantly enhanced optical nonlinearity and the mechanism related to the bonding structures and the composition ratio in the nonstoichiometric silicon carbide are elucidated.

RSC Advances, 2015

Si-rich SixC1−x films grown at different RSiC fluence ratios were applied as an i-SixC1−x absorbi... more Si-rich SixC1−x films grown at different RSiC fluence ratios were applied as an i-SixC1−x absorbing layer in all Si-rich SixC1−x-based PVSCs.

ACM Transactions on Embedded Computing Systems

Although NAND flash memory has the advantages of small size, low-power consumption, shock resista... more Although NAND flash memory has the advantages of small size, low-power consumption, shock resistance, and fast access speed, NAND flash memory still faces the problems of “out-of-place updates,” “garbage collection,” and “unbalanced execution time” due to its hardware limitations. Usually, a flash translation layer (FTL) can maintain the mapping cache (in limited DRAM space) to store the frequently accessed address mapping for “out-of-place updates” and maintain the read/write buffer (in limited DRAM space) to store the frequently accessed data for “garbage collection” and “unbalanced execution time”. In this article, we will propose a write-related and read-related DRAM allocation strategy inside solid-state drives (SSDs). The design idea behind the write-related DRAM allocation method is to calculate the suitable DRAM allocation for the write buffer and the write mapping cache by building a statistical model with a minimum expected value of writes for NAND flash memory. To further...

In vivo studies of bile salt absorption and distribution using ^"C-taurocho/ate were made in... more In vivo studies of bile salt absorption and distribution using ^"C-taurocho/ate were made in fed and fasted, intact and cholecystectomized Syrian hamsters. There was no significant difference in the rate of ileal ^"C-b/'/e salt absorption or the distribution of ^*C-bile salts among the compartments of the enterohepatic circulator/ system in any of the animals. The results showed that the sphincter of Oddi is patent in fasting, intact and cholecystectomized hamsters. They also suggested that the diminished bile salt pool seen in fasted, cholecystectomized but not in intact hamsters arises from a) a primary, fasting-induced decrease in liver enzyme activity involved in bile acid synthesis; b)the lack ofa gallbladder to store a portion of the bile acids in the enterohepatic circulatory pool; andc) losses of bile acids into the large gut during each cycle ofthe enterohepatic circulation.

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017

All-optical processing and generation are regarded as a key solution to achieve ultrahigh bitrate... more All-optical processing and generation are regarded as a key solution to achieve ultrahigh bitrate communication in next generation. Silicon based optical waveguides have been widely developed, including ultrafast electrical-optical modulator, splitter, wavelength generator, and etc. However, the carrier relaxation issues as well as inevitable two-photon absorption in communication regions limit its application in developing ultrafast all-optical modulation and supercontinuum generation. Recently, large optical bandgap materials have been utilized to demonstrate nonlinear waveguide applications for all-optical processing. Tantalum pentoxide (Ta2O5) used to serve as gate dielectric and optical coatings in optoelectronic devices due to its high dielectric constant and refractive index properties. Nowadays, Ta2O5 with high optical nonlinearity and free of nonlinear absorption let it suitable in developing small footprint, high power operation optical devices [1, 2].

Optical Amplifiers and Their Applications, 2003

Optical and electrical pulse modulation induced actively harmonic mode-locking of Erbium-doped fi... more Optical and electrical pulse modulation induced actively harmonic mode-locking of Erbium-doped fiber ring lasers are demonstrated. Comparisons between these two configurations such as output stability, build-up dynamics, and frequency characteristics are reported as well.

Asia Communications and Photonics Conference, 2012

Based on the finite potential well approximation and effective masses modification, the bandgap e... more Based on the finite potential well approximation and effective masses modification, the bandgap energy of Si-QD is derived as Eg(d)=1.12+5.83/d1.78 (eV). The luminescent mechanisms of SiOx have been differentiated by PL and TRPL measurements.

Asia Communications and Photonics Conference, 2012

Based on the finite potential well approximation and effective masses modification, the bandgap e... more Based on the finite potential well approximation and effective masses modification, the bandgap energy of Si-QD is derived as Eg(d)=1.12+5.83/d1.78 (eV). The luminescent mechanisms of SiOx have been differentiated by PL and TRPL measurements.

Asia Communications and Photonics Conference, 2012

Based on the finite potential well approximation and effective masses modification, the bandgap e... more Based on the finite potential well approximation and effective masses modification, the bandgap energy of Si-QD is derived as Eg(d)=1.12+5.83/d1.78 (eV). The luminescent mechanisms of SiOx have been differentiated by PL and TRPL measurements.

A 40-GHz photonic microwave clock with 0.11 ps timing jitter is demonstrated by using fractional ... more A 40-GHz photonic microwave clock with 0.11 ps timing jitter is demonstrated by using fractional Talbot effect to obtain a frequency-doubling of 10-GHz pulse injection induced the 2nd-order rational-harmonic-mode-locking (RHML) of a SOA fiber laser.

Ultrafast Phenomena in Semiconductors Ii, 1998

Arsenic-ion-implanted GaAs (or GaAs:As), with excess-arsenic-related deep level defects, has rece... more Arsenic-ion-implanted GaAs (or GaAs:As), with excess-arsenic-related deep level defects, has recently emerged as a potential alternative to low-temperature molecularbeam-epitaxy (LTMBE) grown GaAs for ultrafast optoelectronic applications. In this paper, we review results of our structural, ultrafast optical and optoelectronic investigations of as-implanted and thermally annealed GaAs:As. Picosecond photoconductive switching responses are reported for devices fabricated on thermallyannealed low-dose and high-dose implanted GaAs:As. Novel sign reversals in nearbandgap ultrafast optical responses were observed and explained.

RSC Advances, 2015

An amorphous Si-rich SiC film with nearly warm white-light photoluminescence is synthesized to se... more An amorphous Si-rich SiC film with nearly warm white-light photoluminescence is synthesized to serve as a solid-state phosphorous material for white-lighting applications.

Current Nanoscience, Apr 2, 2020

This paper emphasizes on overviewing the developing progress of the state-of-the-art carbon nanom... more This paper emphasizes on overviewing the developing progress of the state-of-the-art carbon nanomaterial-based saturable absorbers for passively mode-locked fiber lasers, including carbon nanotube (CNT), graphene, graphite and other carbon nanomaterials. With reviewing the performances of these proposed candidates, the characteristic parameters required for initiating and stabilizing the passive mode-locked fiber lasers are summarized for comparison and discussion. At first, the basic characteristics such as saturation intensity and self-amplitude-modulation (SAM) coefficients of the CNT material with different-wall types are discussed in detail. In comparison, the single-wall CNT possesses optical nonlinearity better than double-wall CNT, whereas the doublewall CNT exhibits wavelength tenability and the multi-wall CNT fails to initiate mode-locking. Subsequently, different graphene saturable absorbers with slightly changing their optical properties made by various fabrication technologies are introduced to take over the role of typical CNT saturable absorber. The detailed analyses on graphene saturable absorber for developing various types of passively mode-locked fiber lasers are overviewed. At last, other new-aspect graphite and carbon nanomaterials related saturable absorbers have emerged because they reveal similar optical nonlinearity with graphene but exhibit cost-effectiveness and easy-production. When changing saturable absorber from graphene to other carbon nanomaterials, the modulation depth is decreased but the saturation intensity is concurrently enlarged because of the disordered structure with increased interlayer spacing and reduced graphene content. At the current stage, selecting carbon nanomaterials with high nonlinear absorbance and low saturated intensity for large SAM coefficient is the golden rule for passively mode-locked the fiber lasers in future academic and industrial applications.

Conference on Lasers and Electro-Optics, 2022

All-optical intensity modulator at 25 Gbps in silicon carbide-based Kerr switching with a nonline... more All-optical intensity modulator at 25 Gbps in silicon carbide-based Kerr switching with a nonlinear refractive index of 2.88×10-13 cm2/W is demonstrated with an SNR of 5.6 dB and an ER of 11.8 dB.

IEEE Journal of Selected Topics in Quantum Electronics, Mar 1, 2016

The Si quantum dot doped SiO x rib waveguide based free-carrier absorption modulator with enhance... more The Si quantum dot doped SiO x rib waveguide based free-carrier absorption modulator with enhanced all-optical modulation depth is demonstrated by integrating with a micro-ring waveguide resonator. The micro-ring waveguide resonator with a Q-factor of 6x10 3 induces a throughput transfer function in wavelength domain, such a transmittance notch can be blue-shifted by varying the excited free-carrier density of Si-QD. When injecting the continuous-wave probe at central wavelength of the transmittance notch, the probe signal can be inversely modulated by optically pumping the micro-ring waveguide resonator to blue-shift the notch away from its original wavelength. By optimizing the pump wavelengths, the largest free-carrier absorption (FCA) loss and highest free-carrier density can be enhanced to 2.9 cm-1 and 7.83×10 16 cm-3 , respectively. With the excited free-carrier density of ~1.3×10 16 cm-3 inside the micro-ring waveguide, the maximal wavelength of the transmittance notch can be blue-shifted by 0.033 nm. The optical pumping also induces the broadened linewidth of transmittance notch from 0.25 to 0.27 nm. With the integrated micro-ring waveguide resonator, the all-optical modulation depth can be further enhanced from 52.5% to 63.5% by shifting the notched transmission spectrum of the micro-ring waveguide with the excited free-carrier density of Si-QD at probe wavelength of 1563.5 nm.

APL photonics, Aug 1, 2022

Group-IV semiconductor compounds with intense optical nonlinearity have emerged as a new branch o... more Group-IV semiconductor compounds with intense optical nonlinearity have emerged as a new branch of all-optical processing materials benefiting from the manufacturing compatibility with silicon electronic and photonic integrated circuits. Owing to the chemical reforming on the bonding or precipitating feature of the compositional atoms in the membrane matrix, either the orbital hybridization or the quantum self-assembly of interstitial composites can be employed to reform the electronic and optical characteristics. The recent development on enhancing the nonlinear refractive indices of the group-IV semiconductor materials has revealed significant progress to accelerate the all-optical switching logic, which greatly reduces the energy consumption to enable the constitution of the advanced multi-logic gating and the entry-level photonic computing circuits. This work not only overviews the Group-IV semiconductor photonic data processing elements but also prospects for the future direction of optical quantum computation and communication. To date, the nonlinear refractive indices of the group-IV semiconductor materials can be obtained as 10-8-10-16 cm 2 /W in the range between 300 nm to 10000 nm in 2022. The wavelength conversion and data switching with bit rate beyond 25 Gbps have been achieved via nonlinear photonic waveguide components. By taking the nonstoichiometric SiC-made micro-ring waveguide as an example, the n2 as high as 3.05×10-14 cm 2 /W of the resonant SiC micro-ring gate is retrieved from the pump-probe analysis. The eyediagram of the wavelength converted data in the micro-ring achieves its signal-to-noise and on/off-extinction ratios (SNR and ER) of 5.6 dB and 11.8 dB, while up to 25-Gbps all-optical data-format inversion with 4.8-dB SNR and 10.2-dB ER is also performed during an ultrafast switching within rising and falling time of less than 22 ps. Such all-optical data processing including both wavelength switching and format conversion in the highly nonlinear optical SiC waveguide resonator can achieve error-free operation with corresponding bit-error-ratios of lower than 1×10-5 at 25 Gbps after forward error correction.

ECS Journal of Solid State Science and Technology, 2012

ABSTRACT In contrast to silicon-based p-n junction photovoltaic solar cells (PVSCs), a silicon ri... more ABSTRACT In contrast to silicon-based p-n junction photovoltaic solar cells (PVSCs), a silicon rich silicon carbide (SixC1-x)-based thin-film PVSC with enhanced absorption at the visible wavelength region. The silicon rich SixC1-x films are synthesized by using a low-substrate temperature and low-power plasma-enhanced chemical vapor (PECVD) system in a silane-rich environment. The molar ratio of the silicon atoms in SixC1-x grown at 500 degrees C was tunable from 0.63 to 0.66 when reducing RF plasma power from 100 to 20 W. The low-plasma PECVD growth gave the SixC1-x an enhanced broadband absorption at 400-600 nm, where the highest optical absorption coefficient was 1.3x10(5) cm(-1). The silicon rich composition also reduced the optical bandgap energy from 2.05 to 1.49 eV. This type of red-shifted cutoff wavelength promoted solar energy conversion at the near-infrared region. Consequently, an ITO/p-SixC1-x/n-SixC1-x/A1 PVSC with a silicon molar ratio of 66% enhanced its conversion efficiency from 5 x 10(-3) to 4.7% when the n-type SixC1-x thickness was reduced from 150 to 25 nm, which is attributed to the reduced series resistance to 0.6 Omega and the increased shunt resistance to 1500 Omega.

All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using... more All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH₄]/[CH₄+SiH₄] fluence ratio of 50%, the i-Si_xC_1-x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×10⁵ cm^-1. The open-circuit voltage and short-circuit current of the Si-rich Si_0.67C_0.33/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm² with the conversion efficiency and filling factor to 5.51% and 27%, respectively.

We reported the light enhancement obtained from a Si-nanocrystals-embedded SiO x film on a silico... more We reported the light enhancement obtained from a Si-nanocrystals-embedded SiO x film on a silicon-on-insulator (SOI) and Si substrates in visible light range. A strong emission from the SOI substrate was observed due to the better optical confinement. We also compare the vertical distribution of the electric field in vertical direction of the two structures.

Journal of Materials Chemistry C, 2015

The optical nonlinearity of the nonstoichiometric silicon carbide with a variable C/Si compositio... more The optical nonlinearity of the nonstoichiometric silicon carbide with a variable C/Si composition ratio is studied. The significantly enhanced optical nonlinearity and the mechanism related to the bonding structures and the composition ratio in the nonstoichiometric silicon carbide are elucidated.

RSC Advances, 2015

Si-rich SixC1−x films grown at different RSiC fluence ratios were applied as an i-SixC1−x absorbi... more Si-rich SixC1−x films grown at different RSiC fluence ratios were applied as an i-SixC1−x absorbing layer in all Si-rich SixC1−x-based PVSCs.

ACM Transactions on Embedded Computing Systems

Although NAND flash memory has the advantages of small size, low-power consumption, shock resista... more Although NAND flash memory has the advantages of small size, low-power consumption, shock resistance, and fast access speed, NAND flash memory still faces the problems of “out-of-place updates,” “garbage collection,” and “unbalanced execution time” due to its hardware limitations. Usually, a flash translation layer (FTL) can maintain the mapping cache (in limited DRAM space) to store the frequently accessed address mapping for “out-of-place updates” and maintain the read/write buffer (in limited DRAM space) to store the frequently accessed data for “garbage collection” and “unbalanced execution time”. In this article, we will propose a write-related and read-related DRAM allocation strategy inside solid-state drives (SSDs). The design idea behind the write-related DRAM allocation method is to calculate the suitable DRAM allocation for the write buffer and the write mapping cache by building a statistical model with a minimum expected value of writes for NAND flash memory. To further...

In vivo studies of bile salt absorption and distribution using ^"C-taurocho/ate were made in... more In vivo studies of bile salt absorption and distribution using ^"C-taurocho/ate were made in fed and fasted, intact and cholecystectomized Syrian hamsters. There was no significant difference in the rate of ileal ^"C-b/'/e salt absorption or the distribution of ^*C-bile salts among the compartments of the enterohepatic circulator/ system in any of the animals. The results showed that the sphincter of Oddi is patent in fasting, intact and cholecystectomized hamsters. They also suggested that the diminished bile salt pool seen in fasted, cholecystectomized but not in intact hamsters arises from a) a primary, fasting-induced decrease in liver enzyme activity involved in bile acid synthesis; b)the lack ofa gallbladder to store a portion of the bile acids in the enterohepatic circulatory pool; andc) losses of bile acids into the large gut during each cycle ofthe enterohepatic circulation.

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017

All-optical processing and generation are regarded as a key solution to achieve ultrahigh bitrate... more All-optical processing and generation are regarded as a key solution to achieve ultrahigh bitrate communication in next generation. Silicon based optical waveguides have been widely developed, including ultrafast electrical-optical modulator, splitter, wavelength generator, and etc. However, the carrier relaxation issues as well as inevitable two-photon absorption in communication regions limit its application in developing ultrafast all-optical modulation and supercontinuum generation. Recently, large optical bandgap materials have been utilized to demonstrate nonlinear waveguide applications for all-optical processing. Tantalum pentoxide (Ta2O5) used to serve as gate dielectric and optical coatings in optoelectronic devices due to its high dielectric constant and refractive index properties. Nowadays, Ta2O5 with high optical nonlinearity and free of nonlinear absorption let it suitable in developing small footprint, high power operation optical devices [1, 2].