Nicolas Zerounian | Paris Sud XI University (original) (raw)

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Papers by Nicolas Zerounian

Research paper thumbnail of 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

Procedia Engineering, 2004

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an... more This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.

Research paper thumbnail of 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

Procedia Engineering, 2004

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an... more This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.

Research paper thumbnail of 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

Procedia Engineering, 2004

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an... more This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.

Research paper thumbnail of 230GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

IEEE Journal of Solid-state Circuits, 2005

Research paper thumbnail of Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic Aspects

Physical Review Letters, 2008

Research paper thumbnail of SiGe heterojunction bipolar transistor with 213 GHz fT at 77 K

Electronics Letters, 2000

ABSTRACT

Research paper thumbnail of Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's

IEEE Transactions on Electron Devices, 2000

Research paper thumbnail of Self Heating in InP DHBT Technology for 40 Gb/s ICs

Research paper thumbnail of 230GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

IEEE Journal of Solid-state Circuits, 2005

Research paper thumbnail of Carbon effect on neutral base recombination in high-speed SiGeC HBTs

We have presented the performances and electrical behavior of high-speed SiGeC HBTs having enhanc... more We have presented the performances and electrical behavior of high-speed SiGeC HBTs having enhanced NBR by carbon insertion in excess. The current gain is strongly reduced, so that BVCEO increases by 0.5 V, and the fT times BVCEO product shifts from 340 to 423 GHz.V, which offers new possibilities for HBTs optimization, notably by increasing collector doping. Thanks to the NBR, the current gain dependency with temperature above 300 K is reduced, which is interesting for applications such as power amplifiers. The current gain evolution with VBE is explained by trap saturation, which was confirmed in simulations by inserting a trap level in the base gap. The band gap dependency with carbon insertion is also demonstrated and was developed in the final paper

Research paper thumbnail of Experimental Study of Metallic Emitter SiGeC HBTs

This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. ... more This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. An innovative integration process called PRETCH is detailed, along with static and high-frequency electrical results. Hall Effect measurements down to 20 K on As-doped mono-emitter layers are also reported, which help understand the physics of hole injection in highly doped emitters. The optimization of the process is detailed, and a significant increase of the fT times BVCEO product in metallic emitter SiGe HBTs is finally demonstrated

Research paper thumbnail of On the use of cryogenic measurements to investigate the potential of Si/SiGe:C HBTs for terahertz operation

The transit times analysis, at room and cryogenic temperatures, of SiGe HBTs featuring various ft... more The transit times analysis, at room and cryogenic temperatures, of SiGe HBTs featuring various ftau/fmax trade-offs is performed. It allows to identify the principal development axes to reach half-terahertz at 300 K, a frequency already obtained at 40 K.

Research paper thumbnail of SiGe HBTs featuring fT ≫400GHz at room temperature

This paper presents the results of investigations on process thermal budget reduction in order to... more This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe the variations of DC and AC characteristics of the devices with the spike annealing temperature. Record peak fT values of 410 GHz and 640 GHz are reported at room and cryogenic temperatures respectively.

Research paper thumbnail of SiGe Hetero FETs on silicon at cryogenic temperature

Journal De Physique Iv, 2002

Better transport properties and band gap engineering give a growing importance to SiCe alloy tech... more Better transport properties and band gap engineering give a growing importance to SiCe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on RF and low noise.

Research paper thumbnail of Complex permittivity characterization of benzocyclobutene for terahertz applications

Microelectronic Engineering, 2008

Research paper thumbnail of Continuous wave terahertz generation up to 2 THz by photomixing on ion-irradiated In0.53Ga0.47As at 1.55 mum wavelengths

Applied Physics Letters, 2007

We report the generation of continuous terahertz waves from microwave frequencies of up to 2 THz ... more We report the generation of continuous terahertz waves from microwave frequencies of up to 2 THz obtained by photomixing two optical waves at 1.55 μm wavelengths in ion-irradiated In0.53Ga0.47As interdigitated photomixers. A 200 nm thick silicon nitride coating is used for antireflection and passivation layer, improving the reliability and the heat tolerance of the photomixer. In such devices, output powers greater than 40 nW at 0.5 THz and 10 nW at 1 THz have been achieved. Considering the observed saturation of the output power with the increase of bias voltage, the optimum excitation conditions regarding optical power and bias voltage are discussed.

Research paper thumbnail of Emission characteristics of ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 µm

Optics Express, 2007

We present a detailed study of the effect of the carrier lifetime on the terahertz signal charact... more We present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br(+)-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 muW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses.

Research paper thumbnail of Low temperature analysis of 0.25 T-Gate SiGe n-MODFET

We present a low temperature DC and HF analysis of a 0.25J1m T-gate SiGe n-MODFET developed at th... more We present a low temperature DC and HF analysis of a 0.25J1m T-gate SiGe n-MODFET developed at the DaimlerChrysler Research Center. fmax values were from 100 to 120GHz at 300K up to 195GHz at 50K These high frequency measurements are the first at low temperature of SiGe n-MODFETs. They also represent the highest RT data reported so far. This paper

Research paper thumbnail of High speed Si/SiGe and Ge/SiGe MODFETs

The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their exce... more The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.

Research paper thumbnail of Electroluminescence spectroscopy for reliability investigations of 1.55 mum bulk semiconductor optical amplifier

Microelectronics Reliability, 2005

This paper demonstrates the complementary relation between functional parameters and electrolumin... more This paper demonstrates the complementary relation between functional parameters and electroluminescence spectroscopy for reliability investigations of 1550 nm Semiconductor Optical Amplifiers of 700 μm length active region. Ageing tests have been set to 270 mA-100 °C-1500 h and realized on two different wafers showing more impact on wafer 1 than on wafer 2. Our investigations are particularly focused on interpretation

Research paper thumbnail of 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

Procedia Engineering, 2004

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an... more This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.

Research paper thumbnail of 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

Procedia Engineering, 2004

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an... more This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.

Research paper thumbnail of 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

Procedia Engineering, 2004

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an... more This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.

Research paper thumbnail of 230GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

IEEE Journal of Solid-state Circuits, 2005

Research paper thumbnail of Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic Aspects

Physical Review Letters, 2008

Research paper thumbnail of SiGe heterojunction bipolar transistor with 213 GHz fT at 77 K

Electronics Letters, 2000

ABSTRACT

Research paper thumbnail of Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's

IEEE Transactions on Electron Devices, 2000

Research paper thumbnail of Self Heating in InP DHBT Technology for 40 Gb/s ICs

Research paper thumbnail of 230GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

IEEE Journal of Solid-state Circuits, 2005

Research paper thumbnail of Carbon effect on neutral base recombination in high-speed SiGeC HBTs

We have presented the performances and electrical behavior of high-speed SiGeC HBTs having enhanc... more We have presented the performances and electrical behavior of high-speed SiGeC HBTs having enhanced NBR by carbon insertion in excess. The current gain is strongly reduced, so that BVCEO increases by 0.5 V, and the fT times BVCEO product shifts from 340 to 423 GHz.V, which offers new possibilities for HBTs optimization, notably by increasing collector doping. Thanks to the NBR, the current gain dependency with temperature above 300 K is reduced, which is interesting for applications such as power amplifiers. The current gain evolution with VBE is explained by trap saturation, which was confirmed in simulations by inserting a trap level in the base gap. The band gap dependency with carbon insertion is also demonstrated and was developed in the final paper

Research paper thumbnail of Experimental Study of Metallic Emitter SiGeC HBTs

This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. ... more This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. An innovative integration process called PRETCH is detailed, along with static and high-frequency electrical results. Hall Effect measurements down to 20 K on As-doped mono-emitter layers are also reported, which help understand the physics of hole injection in highly doped emitters. The optimization of the process is detailed, and a significant increase of the fT times BVCEO product in metallic emitter SiGe HBTs is finally demonstrated

Research paper thumbnail of On the use of cryogenic measurements to investigate the potential of Si/SiGe:C HBTs for terahertz operation

The transit times analysis, at room and cryogenic temperatures, of SiGe HBTs featuring various ft... more The transit times analysis, at room and cryogenic temperatures, of SiGe HBTs featuring various ftau/fmax trade-offs is performed. It allows to identify the principal development axes to reach half-terahertz at 300 K, a frequency already obtained at 40 K.

Research paper thumbnail of SiGe HBTs featuring fT ≫400GHz at room temperature

This paper presents the results of investigations on process thermal budget reduction in order to... more This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe the variations of DC and AC characteristics of the devices with the spike annealing temperature. Record peak fT values of 410 GHz and 640 GHz are reported at room and cryogenic temperatures respectively.

Research paper thumbnail of SiGe Hetero FETs on silicon at cryogenic temperature

Journal De Physique Iv, 2002

Better transport properties and band gap engineering give a growing importance to SiCe alloy tech... more Better transport properties and band gap engineering give a growing importance to SiCe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on RF and low noise.

Research paper thumbnail of Complex permittivity characterization of benzocyclobutene for terahertz applications

Microelectronic Engineering, 2008

Research paper thumbnail of Continuous wave terahertz generation up to 2 THz by photomixing on ion-irradiated In0.53Ga0.47As at 1.55 mum wavelengths

Applied Physics Letters, 2007

We report the generation of continuous terahertz waves from microwave frequencies of up to 2 THz ... more We report the generation of continuous terahertz waves from microwave frequencies of up to 2 THz obtained by photomixing two optical waves at 1.55 μm wavelengths in ion-irradiated In0.53Ga0.47As interdigitated photomixers. A 200 nm thick silicon nitride coating is used for antireflection and passivation layer, improving the reliability and the heat tolerance of the photomixer. In such devices, output powers greater than 40 nW at 0.5 THz and 10 nW at 1 THz have been achieved. Considering the observed saturation of the output power with the increase of bias voltage, the optimum excitation conditions regarding optical power and bias voltage are discussed.

Research paper thumbnail of Emission characteristics of ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 µm

Optics Express, 2007

We present a detailed study of the effect of the carrier lifetime on the terahertz signal charact... more We present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br(+)-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 muW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses.

Research paper thumbnail of Low temperature analysis of 0.25 T-Gate SiGe n-MODFET

We present a low temperature DC and HF analysis of a 0.25J1m T-gate SiGe n-MODFET developed at th... more We present a low temperature DC and HF analysis of a 0.25J1m T-gate SiGe n-MODFET developed at the DaimlerChrysler Research Center. fmax values were from 100 to 120GHz at 300K up to 195GHz at 50K These high frequency measurements are the first at low temperature of SiGe n-MODFETs. They also represent the highest RT data reported so far. This paper

Research paper thumbnail of High speed Si/SiGe and Ge/SiGe MODFETs

The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their exce... more The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.

Research paper thumbnail of Electroluminescence spectroscopy for reliability investigations of 1.55 mum bulk semiconductor optical amplifier

Microelectronics Reliability, 2005

This paper demonstrates the complementary relation between functional parameters and electrolumin... more This paper demonstrates the complementary relation between functional parameters and electroluminescence spectroscopy for reliability investigations of 1550 nm Semiconductor Optical Amplifiers of 700 μm length active region. Ageing tests have been set to 270 mA-100 °C-1500 h and realized on two different wafers showing more impact on wafer 1 than on wafer 2. Our investigations are particularly focused on interpretation