Eric Milburn | University of Alberta (original) (raw)
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University of Engineering & Technology Lahore, Pakistan
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Papers by Eric Milburn
As communications technologies continue to grow, the role of gallium nitride (GaN) transistors fo... more As communications technologies continue to grow, the role of gallium nitride (GaN) transistors for high-frequency applications continues to grow as the speed requirements of more and more applications exceed the abilities of silicon. Today the vast majority of commercial GaN devices use HEMT architectures which are far more complicated to manufacture and have inferior offstate performance in comparison to standard MOSFET architecture. The primary cause for this is the lack of dielectric materials capable of forming an interface with GaN that does not dramatically degrade carrier mobility due to interface traps. In this research I demonstrate that atomic layer deposited (ALD) silicon nitride (SiN) forms an interface with GaN that bypasses any deleterious effects of interface traps and allows for high mobility of carriers within a simple threelayer MOSCAP device. The GaN-SiN-ruthenium system used in these MOSCAPs is analyzed through materials and electronic characterization to describe the chemical makeup and band structure of the system. These findings suggest a promising path of research for developing architecturally simple lateral GaN MOSFETs with speeds comparable to commercial HEMTs with superior off-state performance. iii Preface I, Eric Milburn, am the principal contributor to all chapters of this thesis. Chapter 4 of this thesis is based substantially off of Conference Proceeding #1. Triratna Muneshwar and Alex Ma assisted with the deposition of all ruthenium contacts and SiN ALD films in throughout Chapters 4 and 5.
As communications technologies continue to grow, the role of gallium nitride (GaN) transistors fo... more As communications technologies continue to grow, the role of gallium nitride (GaN) transistors for high-frequency applications continues to grow as the speed requirements of more and more applications exceed the abilities of silicon. Today the vast majority of commercial GaN devices use HEMT architectures which are far more complicated to manufacture and have inferior offstate performance in comparison to standard MOSFET architecture. The primary cause for this is the lack of dielectric materials capable of forming an interface with GaN that does not dramatically degrade carrier mobility due to interface traps. In this research I demonstrate that atomic layer deposited (ALD) silicon nitride (SiN) forms an interface with GaN that bypasses any deleterious effects of interface traps and allows for high mobility of carriers within a simple threelayer MOSCAP device. The GaN-SiN-ruthenium system used in these MOSCAPs is analyzed through materials and electronic characterization to describe the chemical makeup and band structure of the system. These findings suggest a promising path of research for developing architecturally simple lateral GaN MOSFETs with speeds comparable to commercial HEMTs with superior off-state performance. iii Preface I, Eric Milburn, am the principal contributor to all chapters of this thesis. Chapter 4 of this thesis is based substantially off of Conference Proceeding #1. Triratna Muneshwar and Alex Ma assisted with the deposition of all ruthenium contacts and SiN ALD films in throughout Chapters 4 and 5.