Nenad Novkovski | Ss. Cyril and Methodius University (UKIM) (Univerzitet "Sv. Kiril i Metodij" - Skopje) (original) (raw)
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CSIC (Consejo Superior de Investigaciones Científicas-Spanish National Research Council)
Centre National de la Recherche Scientifique / French National Centre for Scientific Research
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Papers by Nenad Novkovski
2012 28th International Conference on Microelectronics Proceedings, 2012
Facta universitatis - series: Electronics and Energetics, 2014
Frontiers in Materials, 2014
Materials Chemistry and Physics, 2014
Materials Science in Semiconductor Processing
ABSTRACT
Applied Physics Letters, 2006
The astonishing development of the microelectronic devices during the past half century relied in... more The astonishing development of the microelectronic devices during the past half century relied in a great part on the exceptional properties of the silicon dioxide as a functional insulating layer for the metal-oxide-silicon field effect transistors, dynamic random access memories and electrically erasable programmable read only memories.
Investigation of the conduction mechanism confirms that SE dominates for low fields (till 4 V) an... more Investigation of the conduction mechanism confirms that SE dominates for low fields (till 4 V) and goes to Pool-Frenkel for medium fields (over 4 V) for accumulation regime and for reversed bias fast increase of the current is observed at 3–5 V which may be due to the breakdown of the ultrathin SiO2 at the interface with Si. For this region the conduction mechanism may be combination of Fowler-Nordheim tunneling (FN) through SiO2 and PF through Ta2O5.
Page 1. ABSTRACT The difference between the charges to breakdown for different injection polariti... more Page 1. ABSTRACT The difference between the charges to breakdown for different injection polarities for oxides and nitrided oxides on silicon was studied in various aspects. The general feature is that the charge to breakdown for injection with negative gate is lower then the corresponding value for positive gate. Furthermore, it is markedly more difficult to improve with nitridation the charge to breakdown for negative gate, then for the positive.
Reliability properties of 30-nm thick insulating films grown by thermal oxydation of Ta deposited... more Reliability properties of 30-nm thick insulating films grown by thermal oxydation of Ta deposited on plasma nitrided Si for times varying from 5 to 15 s were studied for the case of constant current stresses. Stress-induced leakage currents of thus obtained Ta2O5/SiOxNy stacked layers with the stress were monitored by the evolution of the parameters extracted with the use of our recently developed comprehensive model for leakage currents.
The electrical (C–V and I–V) and reliability (constant current stress technique) properties of RF... more The electrical (C–V and I–V) and reliability (constant current stress technique) properties of RF sputtered 30nm thick Ta2O5 on N-implanted Si have been investigated. The dependence on the parameters of both Ta2O5 and the implanted interfacial layers on the stress time are discussed. The leakage current characteristics are analyzed by previously proposed comprehensive model.
Stress-induced leakage currents (SILCs) in thin Ta2O5 films after short-and long-term constant cu... more Stress-induced leakage currents (SILCs) in thin Ta2O5 films after short-and long-term constant current stress (CCS) at both gate polarities at different levels of injected current were investigated. The behavior of the SILCs and the change of quasistatic C–V characteristics after the degradation confirmed the variations of gate voltage with time during CCS necessary to maintain the injected current density through the oxide. The conduction mechanisms were also investigated.
The effect of oxygen annealing at high temperature (873, 1123 K; 30 min) on the insulating proper... more The effect of oxygen annealing at high temperature (873, 1123 K; 30 min) on the insulating properties and conduction mechanism of rf sputtered Ta2O5 (25–80 nm) on Si has been investigated. It is found that the oxygen heating significantly reduces the oxide charge (Qf< 1010 cm− 2) and improves the breakdown characteristics (the effect is more pronounced for the higher annealing temperature). It is accompanied by an increase of the effective dielectric constant (up to 37 after 1123 K treatment).
The standard methods of determination of the dominant conduction mechanisms in high-permittivity ... more The standard methods of determination of the dominant conduction mechanisms in high-permittivity dielectrics were discussed for the case of very thin films. The outcomes from the estimation method were tested on the theoretical results obtained by the use of a comprehensive model describing the I–V characteristics of Ta2O5/SiO2 stacked layers.
2012 28th International Conference on Microelectronics Proceedings, 2012
Facta universitatis - series: Electronics and Energetics, 2014
Frontiers in Materials, 2014
Materials Chemistry and Physics, 2014
Materials Science in Semiconductor Processing
ABSTRACT
Applied Physics Letters, 2006
The astonishing development of the microelectronic devices during the past half century relied in... more The astonishing development of the microelectronic devices during the past half century relied in a great part on the exceptional properties of the silicon dioxide as a functional insulating layer for the metal-oxide-silicon field effect transistors, dynamic random access memories and electrically erasable programmable read only memories.
Investigation of the conduction mechanism confirms that SE dominates for low fields (till 4 V) an... more Investigation of the conduction mechanism confirms that SE dominates for low fields (till 4 V) and goes to Pool-Frenkel for medium fields (over 4 V) for accumulation regime and for reversed bias fast increase of the current is observed at 3–5 V which may be due to the breakdown of the ultrathin SiO2 at the interface with Si. For this region the conduction mechanism may be combination of Fowler-Nordheim tunneling (FN) through SiO2 and PF through Ta2O5.
Page 1. ABSTRACT The difference between the charges to breakdown for different injection polariti... more Page 1. ABSTRACT The difference between the charges to breakdown for different injection polarities for oxides and nitrided oxides on silicon was studied in various aspects. The general feature is that the charge to breakdown for injection with negative gate is lower then the corresponding value for positive gate. Furthermore, it is markedly more difficult to improve with nitridation the charge to breakdown for negative gate, then for the positive.
Reliability properties of 30-nm thick insulating films grown by thermal oxydation of Ta deposited... more Reliability properties of 30-nm thick insulating films grown by thermal oxydation of Ta deposited on plasma nitrided Si for times varying from 5 to 15 s were studied for the case of constant current stresses. Stress-induced leakage currents of thus obtained Ta2O5/SiOxNy stacked layers with the stress were monitored by the evolution of the parameters extracted with the use of our recently developed comprehensive model for leakage currents.
The electrical (C–V and I–V) and reliability (constant current stress technique) properties of RF... more The electrical (C–V and I–V) and reliability (constant current stress technique) properties of RF sputtered 30nm thick Ta2O5 on N-implanted Si have been investigated. The dependence on the parameters of both Ta2O5 and the implanted interfacial layers on the stress time are discussed. The leakage current characteristics are analyzed by previously proposed comprehensive model.
Stress-induced leakage currents (SILCs) in thin Ta2O5 films after short-and long-term constant cu... more Stress-induced leakage currents (SILCs) in thin Ta2O5 films after short-and long-term constant current stress (CCS) at both gate polarities at different levels of injected current were investigated. The behavior of the SILCs and the change of quasistatic C–V characteristics after the degradation confirmed the variations of gate voltage with time during CCS necessary to maintain the injected current density through the oxide. The conduction mechanisms were also investigated.
The effect of oxygen annealing at high temperature (873, 1123 K; 30 min) on the insulating proper... more The effect of oxygen annealing at high temperature (873, 1123 K; 30 min) on the insulating properties and conduction mechanism of rf sputtered Ta2O5 (25–80 nm) on Si has been investigated. It is found that the oxygen heating significantly reduces the oxide charge (Qf< 1010 cm− 2) and improves the breakdown characteristics (the effect is more pronounced for the higher annealing temperature). It is accompanied by an increase of the effective dielectric constant (up to 37 after 1123 K treatment).
The standard methods of determination of the dominant conduction mechanisms in high-permittivity ... more The standard methods of determination of the dominant conduction mechanisms in high-permittivity dielectrics were discussed for the case of very thin films. The outcomes from the estimation method were tested on the theoretical results obtained by the use of a comprehensive model describing the I–V characteristics of Ta2O5/SiO2 stacked layers.