Fritz Awitan | University of the Philippines Diliman (original) (raw)

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Papers by Fritz Awitan

Research paper thumbnail of Optical and Electrical Characterization of an Interdigitated Structured Metal-Semiconductor Photodiode fabricated on n-GaAs substrate

Research paper thumbnail of Time-resolved photoluminescence spectroscopy from erbium-doped Ga0.55Al0.45As

Applied Physics Letters, 1991

Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure ... more Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure is studied by the time resolved photoluminescence experiment. We observed strongly modified photoluminescence kinetics between tunnel injection and reference quantum dot structures. Slowing down of the photoluminescence rise time in the tunnel injection system under weak and moderate excitation powers, we attributed to a fingerprint of a feeding

Research paper thumbnail of Terahertz emission from Indium Oxide films grown on MgO substrates using sub-bandgap photon energy excitation

Optics Express, 2012

Indium oxide (In2O3) films grown by thermal oxidation on MgO substrates were optically excited by... more Indium oxide (In2O3) films grown by thermal oxidation on MgO substrates were optically excited by femtosecond laser pulses having photon energy lower than the In2O3 bandgap. Terahertz (THz) pulse emission was observed using time domain spectroscopy. Results show that THz emission saturates at an excitation fluence of ~400 nJ/cm2. Even as two-photon absorption has been excluded, the actual emission mechanism has yet to be confirmed but is currently attributed to carriers due to weak absorption from defect levels that are driven by a strain field at the interface of the substrate and the grown film.

Research paper thumbnail of Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

Optical Materials, 2010

We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (Q... more We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH's), excited by femtosecond laser. Results showed that the terahertz emission from MDH's can provide information on the GaAs/AlGaAs interface quality while the QD structures have the potential for being intense terahertz emitters; rivaling the emission intensity of p-type bulk InAs.

Research paper thumbnail of Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

Applied Physics Letters, 2009

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by m... more We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a -type InAs wafer, the most intense semiconductor emitter to date. Excitation ...

Research paper thumbnail of Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

Applied Physics Letters, 2010

Excitonic luminescence in two-dimensionally confined layered sulfide oxides Appl. Phys. Lett. 101... more Excitonic luminescence in two-dimensionally confined layered sulfide oxides Appl. Phys. Lett. 101, 191901 (2012) Effect of Li+ ions on enhancement of near-infrared upconversion emission in Y2O3:Tm3+/Yb3+ nanocrystals J. Appl. Phys. 112, 094701 Photoluminescence under high-electric field of PbS quantum dots AIP Advances 2, 042132 Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors

Research paper thumbnail of Terahertz emission from indium oxide films on MgO substrates excited at a photon energy below the bandgap

2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology, 2011

... delayed optical pulse. Arnel A. IQEC/CLEO Pacific Rim 2011 ● 28 August - 1 September 2011 ● S... more ... delayed optical pulse. Arnel A. IQEC/CLEO Pacific Rim 2011 ● 28 August - 1 September 2011 ● Sydney, Australia 978-0-9775657-7-1 © 2011 AOS 455 Page 2. Fig. 1(a). XRD data for the In2O3/MgO films. The most intense ...

Research paper thumbnail of Optical and Electrical Characterization of an Interdigitated Structured Metal-Semiconductor Photodiode fabricated on n-GaAs substrate

Research paper thumbnail of Time-resolved photoluminescence spectroscopy from erbium-doped Ga0.55Al0.45As

Applied Physics Letters, 1991

Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure ... more Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure is studied by the time resolved photoluminescence experiment. We observed strongly modified photoluminescence kinetics between tunnel injection and reference quantum dot structures. Slowing down of the photoluminescence rise time in the tunnel injection system under weak and moderate excitation powers, we attributed to a fingerprint of a feeding

Research paper thumbnail of Terahertz emission from Indium Oxide films grown on MgO substrates using sub-bandgap photon energy excitation

Optics Express, 2012

Indium oxide (In2O3) films grown by thermal oxidation on MgO substrates were optically excited by... more Indium oxide (In2O3) films grown by thermal oxidation on MgO substrates were optically excited by femtosecond laser pulses having photon energy lower than the In2O3 bandgap. Terahertz (THz) pulse emission was observed using time domain spectroscopy. Results show that THz emission saturates at an excitation fluence of ~400 nJ/cm2. Even as two-photon absorption has been excluded, the actual emission mechanism has yet to be confirmed but is currently attributed to carriers due to weak absorption from defect levels that are driven by a strain field at the interface of the substrate and the grown film.

Research paper thumbnail of Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

Optical Materials, 2010

We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (Q... more We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH's), excited by femtosecond laser. Results showed that the terahertz emission from MDH's can provide information on the GaAs/AlGaAs interface quality while the QD structures have the potential for being intense terahertz emitters; rivaling the emission intensity of p-type bulk InAs.

Research paper thumbnail of Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

Applied Physics Letters, 2009

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by m... more We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a -type InAs wafer, the most intense semiconductor emitter to date. Excitation ...

Research paper thumbnail of Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

Applied Physics Letters, 2010

Excitonic luminescence in two-dimensionally confined layered sulfide oxides Appl. Phys. Lett. 101... more Excitonic luminescence in two-dimensionally confined layered sulfide oxides Appl. Phys. Lett. 101, 191901 (2012) Effect of Li+ ions on enhancement of near-infrared upconversion emission in Y2O3:Tm3+/Yb3+ nanocrystals J. Appl. Phys. 112, 094701 Photoluminescence under high-electric field of PbS quantum dots AIP Advances 2, 042132 Bulk silica-based luminescent materials by sol-gel processing of non-conventional precursors

Research paper thumbnail of Terahertz emission from indium oxide films on MgO substrates excited at a photon energy below the bandgap

2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology, 2011

... delayed optical pulse. Arnel A. IQEC/CLEO Pacific Rim 2011 ● 28 August - 1 September 2011 ● S... more ... delayed optical pulse. Arnel A. IQEC/CLEO Pacific Rim 2011 ● 28 August - 1 September 2011 ● Sydney, Australia 978-0-9775657-7-1 © 2011 AOS 455 Page 2. Fig. 1(a). XRD data for the In2O3/MgO films. The most intense ...

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