Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures (original) (raw)

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

Applied Physics Letters, 2009

Abstract

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a -type InAs wafer, the most intense semiconductor emitter to date. Excitation ...

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