InAs(110)-p(1×1)-Sb(1 ML): Electronic structure and surface bonding (original) (raw)

Occupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy

David McIlroy

Physical Review B, 1993

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RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A

Hiroshi Yamaguchi

Microelectronics Journal, 1997

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As overlayer on GaAs(110) studied with photoemission

Janusz Kanski

Physical Review B, 1995

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Electronic properties of Sb deposited on GaAs(110) in the submonolayer coverage regime

Rita Magri

Physical Review B, 1996

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STM measurements on the InAs(110) surface directly compared with surface electronic structure calculations

Roland Wiesendanger

Physical Review B, 2003

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Electronic structure of GaAs with an InAs (001) monolayer

Nacir Tit

Physical Review B, 1995

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Electronic and optical properties of InAs (110)

Cecilia Noguez

Arxiv preprint cond-mat/ …, 2003

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InAs(111)A homoepitaxy with molecular beam epitaxy

BAOLAI LIANG

Journal of Vacuum Science & Technology B

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Sb on GaAs(110) structure studied by direct methods and chemical-shift photoelectron diffraction

Maria Asensio

Applied Surface Science, 1998

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Influence of Sb and Bi epitaxial monolayers on the metal/GaAs(110) interface formation

Norbert Esser

Applied Surface Science, 1992

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Electron states of an Sb-ordered overlayer on GaAs(110)

Elisa MOLINARI

Physical Review B, 1983

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Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface

Fausto Sirotti

Solid State Communications, 1995

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Near-surface electronic structure on InAs (100) modified with self-assembled monolayers of alkanethiols

Laura Greene

1999

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Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates

Víctor Hugo Méndez García

physica status solidi (a), 2009

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Atomic structure and electronic properties of the cleavage InAs (110) surface

Cecilia Noguez

Arxiv preprint cond-mat/ …, 2003

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Electronic and Atomic Structure of GaAs Epitaxial Overlays on Si(111)

Robert Bachrach

Physical Review Letters, 1988

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Low-energy photoelectron diffraction study of epitaxial Sb monolayers on GaAs(110)

Drt Zahn

Surface Science, 1995

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Bi-covered InAs(110) surfaces: An ab initio study

Eduardo Takahashi

Surface Science, 2004

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The growth of bismuth and antimony overlayers on InP(110)

Colm Stephens

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990

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AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110)

Wolfgang R. Schmidt

Czechoslovak Journal of Physics, 1993

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X-ray-photoelectron-diffraction study of InAs/InP(001) heterostructures

M. Gendry

Physical Review B, 1994

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Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As

Robert Bachrach

1987

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Bi monocrystal formation on InAs(111)A and B substrates

K. Hricovini

arXiv: Materials Science, 2018

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Atomic Structure of the Sb-Stabilized GaAs(100)-( 2×4) Surface

Friedhelm Bechstedt

Physical Review Letters, 1996

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Semicoherent interface formation and structure in InAs/GaAs(111)A heteroepitaxy

Dimitrios Maroudas

Surface Science, 1998

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Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

K. Hricovini

New Journal of Physics

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Optical properties of Sb-terminated GaAs and InP (110) surfaces

Norbert Esser

Physical Review B, 1995

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Distinct growth behaviours in molecular-beam epitaxy of (In,Ga)As on GaAs(311)A substrate

Richard Noetzel

Journal of Crystal Growth, 2002

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Tin-stabilized (1×2) and (1×4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

Janusz Sadowski

Surface Science, 2011

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Theoretical study of As overlayers on InP(110) surface: optical properties

Friedhelm Bechstedt

Surface Science, 1998

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Strain and the two-dimensional electronic structure of monolayers of Bi/InAs(110) and Bi/GaAs(110)

David McIlroy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992

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Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−y molecular-beam epitaxial layers

Andrew G Norman

Journal of Applied Physics, 1993

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Theoretical study of the formation of a GaAs bilayer on Si(111)

Gregorio Cocoletzi

Computational Materials Science, 2012

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Bonding and surface electronic structure of an Sb overlayer on GaP(110)

C. Calandra

Surface Science, 1987

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Spatially resolved optical spectroscopy of GaAs islands on InAs (111)

Pier Paolo Lottici

Microelectronics Journal, 1997

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