Temperature dependence of hole mobility in GaAs1−xBix alloys (original) (raw)

Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states

Hans Engelkamp, Mario Capizzi, G. Pettinari

physica status solidi (b), 2013

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Origin of deep localization in GaAs1−xBix and its consequences for alloy properties

Dan Beaton

Physical Review Materials, 2018

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Monte Carlo simulation of bulk hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x

Marino Martinez

Journal of Applied Physics, 1995

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Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures

Ayse Erol, O. Donmez

Semiconductor Science and Technology, 2014

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Localization behavior at bound Bi complex states in GaAs1−xBix

Dan Beaton

Physical Review Materials, 2017

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Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique

Saulius Nargelas, K. Jarasiunas

Applied Physics Letters, 2011

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Compositional evolution of Bi-induced acceptor states in GaAs_{1-x}Bi_{x} alloy

G. Pettinari

Physical Review B, 2011

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Theoretical study of optoelectronic properties of GaAs 1 − x Bi x alloys using valence band anticrossing model

abdelaziz nasr

Infrared Physics & Technology, 2014

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Electron and Hole Transport in Compound Semiconductors

Michael Shur

1995

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Influence of bismuth incorporation on the valence and conduction band edges of GaAs[sub 1−x]Bi[sub x]

Mario Capizzi, G. Pettinari

Applied Physics Letters, 2008

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Minority hole mobility in n+GaAs

Richard Ahrenkiel

Applied Physics Letters, 1992

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Ballistic transport of holes and phonon replicas in lightly doped GaAs

Jose Pinto

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Ab initio study of the strain dependent thermodynamics of Bi doping in GaAs

Thomas Kuech

Physical Review B, 2012

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Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix

G. Pettinari

Applied Physics Letters, 2008

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Experimental values for the hole diffusion coefficient and collector transit velocity in P-n-p AlGaAs/GaAs HBTs

P. Enquist

IEEE Electron Device Letters, 2000

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An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells

Fahrettin SARCAN

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Low-temperature mobility of holes in Si∕SiGe p-channel heterostructures

PHẠM HAI PHONG

Physical Review B, 2004

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Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

D. Sztenkiel

physica status solidi (RRL) – Rapid Research Letters, 2020

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Self-consistent calculation of transport properties in Si GaAs quantum wells as a function of the temperature

G. Naumis

Physica B: Condensed Matter, 2010

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Influence of Bi on dielectric properties of GaAs1−xBix alloys

ŞAHİN YAKUT

Materials Science-Poland, 2019

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Strong wavevector dependence of hole transport in heterostructures

Gerhard Klimeck

Superlattices and microstructures, 2001

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Compositional dependence of the exciton reduced mass in GaAs_{1−x}Bi_{x} (x=0–10%)

J -Man

Physical Review B, 2010

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Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga 1− y Al y As barrier structures containing quantum wells

hüseyin çelik

Central European Journal of Physics, 2008

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Si diffusion in GaAs

P. Murugan

Bulletin of Materials Science, 2002

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Electron mobility in the GaAs/InGaAs/GaAs quantum wells

Victor Vainberg

Semiconductor Physics Quantum Electronics and Optoelectronics, 2013

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Optically determined minority-carrier transport in GaAs/AlxGa1−xAs heterostructures

Harold Hjalmarson

Physical Review B, 1993

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