Victor Vainberg - Academia.edu (original) (raw)
Papers by Victor Vainberg
Physica E: Low-dimensional Systems and Nanostructures, 2004
ABSTRACT An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrare... more ABSTRACT An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrared (IR, peak wavelength λ2) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300K and moderate THz intensity (∼kW/cm2) show that this up-conversion process (with λ1/λ2>102) can be observed with a conventional thermal imaging camera.
Semiconductor Physics Quantum Electronics and Optoelectronics, 2013
The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/G... more The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping -in the quantum well and in the adjacent barrier at a small distance from the well -were used. In the case of shallow wells, in such structures the experimental results may be well described by known electron scattering mechanisms taking into account the shape of real envelope wave functions and band bending due to non-uniform distribution of the positive and negative space charges along the growth direction of heterostructure layers. In the case of delta-like doping in the well, a good agreement between experiment and calculations is achieved, if one takes into account a contribution to electron transport of the states of the impurity band formed by the deltaimpurity beneath the bottom of the lowest quantum subband.
Ukrainian Journal of Physics
The electric conduction of the conducting polynter films of polypyrrole prepared by the electroch... more The electric conduction of the conducting polynter films of polypyrrole prepared by the electrochemical anodic polymerization has been studied within the low temperature range 300 to 1.5 K. It has been found that over the whole temperature range these fils have a variable range hopping conduction which is described by the Mott law R~exp(To/T)1/4, The films prepared with acceleration of polymerization due to usage of a depolarizer have less resistance and weaker temperature dependence. They have also “high temperature” (T > 20K) and “low temperature” (T< 6 K) parts of the Mott conduction with different T0, and short interval situated between those two with stronger R(T). The possible reasons for such conduction behavior of polypyrrole films are discussed.
The concentration and compensation dependences of the conductivity of nuclear-doped p-Ge with the... more The concentration and compensation dependences of the conductivity of nuclear-doped p-Ge with the main impurity concentration NGa= (0.6-3.0) 1017 cm-3 and various compensation degree K=0.1-0.95 were studied in a wide temperature range (300- 0. 06 K). It is established that at K<0.8 the conductivity via the impurity-band is determined by two mechanisms: the E2-conduction associated with activation of carriers into delocalized states in the impurity band sigma0=exp(-E2 /kT) at T> 1K; and the hopping conduction via states below the delocalization threshold at T< 1 K, first with a constant and then (at lower temperatures) with a variable activation energy, sigma~exp(-E3/kT) and sigma~exp[-(T0/T)n], respectively. There obtained the values sigma0=0.4-11 Ohm-1 cm-1 and the dependence of sigma0(K) at different NGa , sigmamin=6 Ohm-1 cm-1 (K=0) and sigmamin=11 Ohm-1 cm-1 (K=0.23). It is shown that the E3-conduction appears only along with the E2-conduction. Explanation of obtained r...
Ukrainian Journal of Physics
Temperature dependences of resistivity ro and the Hall coefficient RH over the wide range of low ... more Temperature dependences of resistivity ro and the Hall coefficient RH over the wide range of low temperatures 1.5-300 K as well as magnetoresistance (MR) at T<=4.2 K have been studied for a number of whisker-like crystals of the Te-Se solid solutions with the Se content from 0 to 2.3 %. The dependences ro(T) have a minimum at 20-40 K and are described by the law ro=a-b lgT at T<Tmin. The transverse MR for the samples studied is positive over the whole magnetic field range and for all values of the Se content. Its dependence on the magnetic field has quadratic and linear parts. The longitudinal MR in contrast to the transverse one in the weak-field range 0-0.6 T has small negative MR. The particulars observed for ro(T) and MR are discussed in terms of the low-te,perature conductivity model taking into account the Kondo effect.
Ukrainian Journal of Physics
The transport of electrons and light emission under the influence of a lateral electric field in ... more The transport of electrons and light emission under the influence of a lateral electric field in InGaAs/GaAs heterostructures with double tunnel-coupled quantum wells has been studied. For the selectively doped structures at 4.2 K and electric fields ∼1kV/cm, we have found that the rate of current growth diminishes with increasing field, and simultaneously a sharp increase of the IR emission intensity is observed. The effect is related to the real-space transfer of electrons from the undoped quantum well to the higher energy states in the doped well where they are accumulated.
The drift of charge carriers in the p-Si 0.88 Ge 0.12 /Si heterostructures under strong lateral e... more The drift of charge carriers in the p-Si 0.88 Ge 0.12 /Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. The data of the drift length, drift mobility, and lifetime of charge carriers within the temperature range 20 to 77 K under the electric field up to 1500 V/cm are presented.
Ukrainian Journal of Physics
The results of investigations of the electric and magnetic transport phenomena of charge carriers... more The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T < 20 K) and the dependence of the charge carrier mobility on the impurity concentration in the delta layers are related to the transport of carriers via two parallel channels with different mobilities, which are the channels formed by the structural and delta-layer quantum wells. The non-linear dependence of the current on the applied electric field strength is explained by the field-induced redistribution of charge carriers between these channels.
Low Temperature Physics, 2014
ABSTRACT The electron energy spectrum of a wide quantum well with a different number of narrow ba... more ABSTRACT The electron energy spectrum of a wide quantum well with a different number of narrow barriers inside the well region was calculated. It was shown that the size-quantization levels rise in energy upon the introduction of such barriers. When the maximum filling of the quantum well with narrow barriers was reached and the fragment of a short-period superlattice was formed, the envelopes of the electron wave functions on the size-quantization levels were similar in shape to those in a usual quantum well. In this case, the scattering by the surface roughness of the heterojunctions was significantly increased. The low-temperature lateral conduction in a quantum well tunnel-coupled with a 10-well short-period superlattice and, separately, in the superlattice alone was investigated experimentally. The obtained results agreed sufficiently well with the model calculations and demonstrated a new way to form parallel conducting channels with different electron mobility.
Sensors and Actuators A: Physical, 1992
Page 56, r.h. column, the sentence 'The value of. . . from 2.2 x lOI to lOI cmp3.' should read 'F... more Page 56, r.h. column, the sentence 'The value of. . . from 2.2 x lOI to lOI cmp3.' should read 'For these samples the values of free-carrier density obtained from Hall-effect measurements in the impurityconduction temperature range are within the limits 2.2 x lOI to 10'6cm-3.'
Sensors and Actuators A: Physical, 1993
ABSTRACT The thermometric characteristics of carbon fibres obtained by the carbonization of visco... more ABSTRACT The thermometric characteristics of carbon fibres obtained by the carbonization of viscose have been studied in the wide low-temperature range 300-0.3 K. It is shown that their resistance versus temperature dependences can be described by the simple formulae R approximately 1gT and R approximately exp(T0/T)n, n < 1, and the magnetoresistance at 4.2 K under magnetic fields of up to 7 T is no more than 4%. The fibres studied are very suitable for the fabrication of microminiature low-temperature sensors.
Semiconductors, 2012
Исследован латеральный транспорт электронов в одно-и двухъямных псевдоморфных гетероструктурах Ga... more Исследован латеральный транспорт электронов в одно-и двухъямных псевдоморфных гетероструктурах GaAs/n-InGaAs/GaAs с квантовыми ямами глубиной 50−100 мэВ и δ-слоями примеси в области ям с концентрацией 10 11 < Ns < 10 12 см −2 . В одноямных структурах, с легированием в центре ямы, наблюдаются немонотонная температурная зависимость коэффициента Холла и рост низкотемпературной подвижности электронов при увеличении концентрации примеси. Совокупность полученных результатов свидетельствует о том, что в проводимости таких структур существенную роль играют электронные состояния примесной зоны. Включение примесной зоны позволяет также удовлетворительно объяснять характеристики проводимости двухъямных структур, при этом в отличие от одноямных структур важную роль играет изгиб зон вследствие асимметричного легирования. Численные расчеты проводимости в рамках рассмотренной модели подтверждают сделанные предположения.
Semiconductors, 2010
ABSTRACT It is shown that the far-infrared radiation of electrons in the selectively doped hetero... more ABSTRACT It is shown that the far-infrared radiation of electrons in the selectively doped heterostructures with double tunnel-coupled quantum wells in high lateral electric fields strongly depends on the level of doping of the wells. At a high impurity concentration in a narrow well, higher than (1−2) × 1011 cm−2, the radiation is caused only by indirect intrasubband electron transitions. At a lower concentration, along with the indirect transitions, the direct intersubband transitions also contribute to the radiation. These transitions become possible in high electric fields due to the real-space electron transfer between the quantum wells.
Semiconductors, 1998
Page 1. PHYSICS OF SEMICONDUCTOR DEVICES Charge-carrier exclusion and accumulationintensified by ... more Page 1. PHYSICS OF SEMICONDUCTOR DEVICES Charge-carrier exclusion and accumulationintensified by ohmic contacts ... The unavoidable errors aris-ing in the asymptotic solutions of the nonlinear continuity equation are eliminated by solving the problem numerically. ...
Semiconductor Science and Technology, 1998
The paper presents theoretical and experimental investigations of the exclusion and accumulation ... more The paper presents theoretical and experimental investigations of the exclusion and accumulation effects in rectangular p + -p-p + structures with a homogeneously doped p-region under conditions of a temperature gradient along its base. It is shown that the temperature gradient causes a strong asymmetry of properties, such as current-voltage characteristics, distributions of non-equilibrium carriers and electric field, with regard to polarity of the voltage drop across the base. The results obtained can be useful for the technology of infrared devices working at room temperature as well as for sensors sensitive to the polarity of an electric field.
Semiconductor Science and Technology, 2003
Thermal emission characteristics of a wide gap semiconductor structure with an h-l junction have ... more Thermal emission characteristics of a wide gap semiconductor structure with an h-l junction have been studied with the view of application to long wavelength (8-12 µm) IR sources. The device performs emission modulation in the spectral range below the edge of fundamental absorption via modulation of the charge carrier concentration in the structure base due to the contact exclusion effect. It is experimentally and theoretically shown that the structure base doping level determines both the magnitude of IR signal and the radiating region length. Experimental studies have been carried out with the structures based on p-Ge at temperatures from 300 to 430 K. It is shown that the maximum active region length may achieve 1 cm with emission intensity of ~mW cm-2 and operation speed of ~100 µs.
Review of Scientific Instruments, 2009
A magnetoresistance (MR) of the well known TVO resistor temperature sensors has been studied at u... more A magnetoresistance (MR) of the well known TVO resistor temperature sensors has been studied at ultralow temperatures from approximately 0.8 K down to approximately 0.1 K under strong magnetic fields up to 8 T. A crossover from positive to negative MR with lowering temperature is found at weak magnetic fields. A zero MR-value at the magnetic field of 4 T, for example, is reached at T approximately 0.2 K. At sufficiently strong magnetic field the negative MR is suppressed and MR returns to positive values. A constant negative MR, which does not depend on the magnetic field from 2 to 8 T, is revealed at the lowest temperature T approximately 0.1 K. The observed behavior of the TVO sensor is explained basing on the model of hopping conduction via localized states in the weak localization regime.
Physica E: Low-dimensional Systems and Nanostructures, 2014
ABSTRACT The lateral magnetoresistance of the multi-layer AlGaAs/GaAs/AlGaAs heterostructures wit... more ABSTRACT The lateral magnetoresistance of the multi-layer AlGaAs/GaAs/AlGaAs heterostructures with quantum wells and impurity δ-layers in the adjacent barriers has been studied at 4.2 K. It is shown that both the classical magnetoresistivity tensor components and the magneto-quantum effects in such structures considerably depend on the contribution to conduction from the channel with small mobility formed in the impurity δ-layer. The obtained results are analyzed within the frame of the model of electron transport via two parallel channels with different electron mobilities. Based on this model the electron concentration in both the structural and δ-layer quantum wells and the dependence of the components of the magnetoresistivity tensor, including the magneto-quantum effects, on magnetic field strength have been calculated for samples with different doping level and manifest a good agreement between experimental results and calculations.
Physica E: Low-dimensional Systems and Nanostructures, 2004
ABSTRACT An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrare... more ABSTRACT An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrared (IR, peak wavelength λ2) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300K and moderate THz intensity (∼kW/cm2) show that this up-conversion process (with λ1/λ2>102) can be observed with a conventional thermal imaging camera.
Semiconductor Physics Quantum Electronics and Optoelectronics, 2013
The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/G... more The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping -in the quantum well and in the adjacent barrier at a small distance from the well -were used. In the case of shallow wells, in such structures the experimental results may be well described by known electron scattering mechanisms taking into account the shape of real envelope wave functions and band bending due to non-uniform distribution of the positive and negative space charges along the growth direction of heterostructure layers. In the case of delta-like doping in the well, a good agreement between experiment and calculations is achieved, if one takes into account a contribution to electron transport of the states of the impurity band formed by the deltaimpurity beneath the bottom of the lowest quantum subband.
Ukrainian Journal of Physics
The electric conduction of the conducting polynter films of polypyrrole prepared by the electroch... more The electric conduction of the conducting polynter films of polypyrrole prepared by the electrochemical anodic polymerization has been studied within the low temperature range 300 to 1.5 K. It has been found that over the whole temperature range these fils have a variable range hopping conduction which is described by the Mott law R~exp(To/T)1/4, The films prepared with acceleration of polymerization due to usage of a depolarizer have less resistance and weaker temperature dependence. They have also “high temperature” (T > 20K) and “low temperature” (T< 6 K) parts of the Mott conduction with different T0, and short interval situated between those two with stronger R(T). The possible reasons for such conduction behavior of polypyrrole films are discussed.
The concentration and compensation dependences of the conductivity of nuclear-doped p-Ge with the... more The concentration and compensation dependences of the conductivity of nuclear-doped p-Ge with the main impurity concentration NGa= (0.6-3.0) 1017 cm-3 and various compensation degree K=0.1-0.95 were studied in a wide temperature range (300- 0. 06 K). It is established that at K<0.8 the conductivity via the impurity-band is determined by two mechanisms: the E2-conduction associated with activation of carriers into delocalized states in the impurity band sigma0=exp(-E2 /kT) at T> 1K; and the hopping conduction via states below the delocalization threshold at T< 1 K, first with a constant and then (at lower temperatures) with a variable activation energy, sigma~exp(-E3/kT) and sigma~exp[-(T0/T)n], respectively. There obtained the values sigma0=0.4-11 Ohm-1 cm-1 and the dependence of sigma0(K) at different NGa , sigmamin=6 Ohm-1 cm-1 (K=0) and sigmamin=11 Ohm-1 cm-1 (K=0.23). It is shown that the E3-conduction appears only along with the E2-conduction. Explanation of obtained r...
Ukrainian Journal of Physics
Temperature dependences of resistivity ro and the Hall coefficient RH over the wide range of low ... more Temperature dependences of resistivity ro and the Hall coefficient RH over the wide range of low temperatures 1.5-300 K as well as magnetoresistance (MR) at T<=4.2 K have been studied for a number of whisker-like crystals of the Te-Se solid solutions with the Se content from 0 to 2.3 %. The dependences ro(T) have a minimum at 20-40 K and are described by the law ro=a-b lgT at T<Tmin. The transverse MR for the samples studied is positive over the whole magnetic field range and for all values of the Se content. Its dependence on the magnetic field has quadratic and linear parts. The longitudinal MR in contrast to the transverse one in the weak-field range 0-0.6 T has small negative MR. The particulars observed for ro(T) and MR are discussed in terms of the low-te,perature conductivity model taking into account the Kondo effect.
Ukrainian Journal of Physics
The transport of electrons and light emission under the influence of a lateral electric field in ... more The transport of electrons and light emission under the influence of a lateral electric field in InGaAs/GaAs heterostructures with double tunnel-coupled quantum wells has been studied. For the selectively doped structures at 4.2 K and electric fields ∼1kV/cm, we have found that the rate of current growth diminishes with increasing field, and simultaneously a sharp increase of the IR emission intensity is observed. The effect is related to the real-space transfer of electrons from the undoped quantum well to the higher energy states in the doped well where they are accumulated.
The drift of charge carriers in the p-Si 0.88 Ge 0.12 /Si heterostructures under strong lateral e... more The drift of charge carriers in the p-Si 0.88 Ge 0.12 /Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. The data of the drift length, drift mobility, and lifetime of charge carriers within the temperature range 20 to 77 K under the electric field up to 1500 V/cm are presented.
Ukrainian Journal of Physics
The results of investigations of the electric and magnetic transport phenomena of charge carriers... more The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T < 20 K) and the dependence of the charge carrier mobility on the impurity concentration in the delta layers are related to the transport of carriers via two parallel channels with different mobilities, which are the channels formed by the structural and delta-layer quantum wells. The non-linear dependence of the current on the applied electric field strength is explained by the field-induced redistribution of charge carriers between these channels.
Low Temperature Physics, 2014
ABSTRACT The electron energy spectrum of a wide quantum well with a different number of narrow ba... more ABSTRACT The electron energy spectrum of a wide quantum well with a different number of narrow barriers inside the well region was calculated. It was shown that the size-quantization levels rise in energy upon the introduction of such barriers. When the maximum filling of the quantum well with narrow barriers was reached and the fragment of a short-period superlattice was formed, the envelopes of the electron wave functions on the size-quantization levels were similar in shape to those in a usual quantum well. In this case, the scattering by the surface roughness of the heterojunctions was significantly increased. The low-temperature lateral conduction in a quantum well tunnel-coupled with a 10-well short-period superlattice and, separately, in the superlattice alone was investigated experimentally. The obtained results agreed sufficiently well with the model calculations and demonstrated a new way to form parallel conducting channels with different electron mobility.
Sensors and Actuators A: Physical, 1992
Page 56, r.h. column, the sentence 'The value of. . . from 2.2 x lOI to lOI cmp3.' should read 'F... more Page 56, r.h. column, the sentence 'The value of. . . from 2.2 x lOI to lOI cmp3.' should read 'For these samples the values of free-carrier density obtained from Hall-effect measurements in the impurityconduction temperature range are within the limits 2.2 x lOI to 10'6cm-3.'
Sensors and Actuators A: Physical, 1993
ABSTRACT The thermometric characteristics of carbon fibres obtained by the carbonization of visco... more ABSTRACT The thermometric characteristics of carbon fibres obtained by the carbonization of viscose have been studied in the wide low-temperature range 300-0.3 K. It is shown that their resistance versus temperature dependences can be described by the simple formulae R approximately 1gT and R approximately exp(T0/T)n, n < 1, and the magnetoresistance at 4.2 K under magnetic fields of up to 7 T is no more than 4%. The fibres studied are very suitable for the fabrication of microminiature low-temperature sensors.
Semiconductors, 2012
Исследован латеральный транспорт электронов в одно-и двухъямных псевдоморфных гетероструктурах Ga... more Исследован латеральный транспорт электронов в одно-и двухъямных псевдоморфных гетероструктурах GaAs/n-InGaAs/GaAs с квантовыми ямами глубиной 50−100 мэВ и δ-слоями примеси в области ям с концентрацией 10 11 < Ns < 10 12 см −2 . В одноямных структурах, с легированием в центре ямы, наблюдаются немонотонная температурная зависимость коэффициента Холла и рост низкотемпературной подвижности электронов при увеличении концентрации примеси. Совокупность полученных результатов свидетельствует о том, что в проводимости таких структур существенную роль играют электронные состояния примесной зоны. Включение примесной зоны позволяет также удовлетворительно объяснять характеристики проводимости двухъямных структур, при этом в отличие от одноямных структур важную роль играет изгиб зон вследствие асимметричного легирования. Численные расчеты проводимости в рамках рассмотренной модели подтверждают сделанные предположения.
Semiconductors, 2010
ABSTRACT It is shown that the far-infrared radiation of electrons in the selectively doped hetero... more ABSTRACT It is shown that the far-infrared radiation of electrons in the selectively doped heterostructures with double tunnel-coupled quantum wells in high lateral electric fields strongly depends on the level of doping of the wells. At a high impurity concentration in a narrow well, higher than (1−2) × 1011 cm−2, the radiation is caused only by indirect intrasubband electron transitions. At a lower concentration, along with the indirect transitions, the direct intersubband transitions also contribute to the radiation. These transitions become possible in high electric fields due to the real-space electron transfer between the quantum wells.
Semiconductors, 1998
Page 1. PHYSICS OF SEMICONDUCTOR DEVICES Charge-carrier exclusion and accumulationintensified by ... more Page 1. PHYSICS OF SEMICONDUCTOR DEVICES Charge-carrier exclusion and accumulationintensified by ohmic contacts ... The unavoidable errors aris-ing in the asymptotic solutions of the nonlinear continuity equation are eliminated by solving the problem numerically. ...
Semiconductor Science and Technology, 1998
The paper presents theoretical and experimental investigations of the exclusion and accumulation ... more The paper presents theoretical and experimental investigations of the exclusion and accumulation effects in rectangular p + -p-p + structures with a homogeneously doped p-region under conditions of a temperature gradient along its base. It is shown that the temperature gradient causes a strong asymmetry of properties, such as current-voltage characteristics, distributions of non-equilibrium carriers and electric field, with regard to polarity of the voltage drop across the base. The results obtained can be useful for the technology of infrared devices working at room temperature as well as for sensors sensitive to the polarity of an electric field.
Semiconductor Science and Technology, 2003
Thermal emission characteristics of a wide gap semiconductor structure with an h-l junction have ... more Thermal emission characteristics of a wide gap semiconductor structure with an h-l junction have been studied with the view of application to long wavelength (8-12 µm) IR sources. The device performs emission modulation in the spectral range below the edge of fundamental absorption via modulation of the charge carrier concentration in the structure base due to the contact exclusion effect. It is experimentally and theoretically shown that the structure base doping level determines both the magnitude of IR signal and the radiating region length. Experimental studies have been carried out with the structures based on p-Ge at temperatures from 300 to 430 K. It is shown that the maximum active region length may achieve 1 cm with emission intensity of ~mW cm-2 and operation speed of ~100 µs.
Review of Scientific Instruments, 2009
A magnetoresistance (MR) of the well known TVO resistor temperature sensors has been studied at u... more A magnetoresistance (MR) of the well known TVO resistor temperature sensors has been studied at ultralow temperatures from approximately 0.8 K down to approximately 0.1 K under strong magnetic fields up to 8 T. A crossover from positive to negative MR with lowering temperature is found at weak magnetic fields. A zero MR-value at the magnetic field of 4 T, for example, is reached at T approximately 0.2 K. At sufficiently strong magnetic field the negative MR is suppressed and MR returns to positive values. A constant negative MR, which does not depend on the magnetic field from 2 to 8 T, is revealed at the lowest temperature T approximately 0.1 K. The observed behavior of the TVO sensor is explained basing on the model of hopping conduction via localized states in the weak localization regime.
Physica E: Low-dimensional Systems and Nanostructures, 2014
ABSTRACT The lateral magnetoresistance of the multi-layer AlGaAs/GaAs/AlGaAs heterostructures wit... more ABSTRACT The lateral magnetoresistance of the multi-layer AlGaAs/GaAs/AlGaAs heterostructures with quantum wells and impurity δ-layers in the adjacent barriers has been studied at 4.2 K. It is shown that both the classical magnetoresistivity tensor components and the magneto-quantum effects in such structures considerably depend on the contribution to conduction from the channel with small mobility formed in the impurity δ-layer. The obtained results are analyzed within the frame of the model of electron transport via two parallel channels with different electron mobilities. Based on this model the electron concentration in both the structural and δ-layer quantum wells and the dependence of the components of the magnetoresistivity tensor, including the magneto-quantum effects, on magnetic field strength have been calculated for samples with different doping level and manifest a good agreement between experimental results and calculations.