Investigation of High-Q Lithium Niobate-Based Double Ring Resonator Used in RF Signal Modulation (original) (raw)
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Compact electro-optical modulators are demonstrated on thin films of lithium niobate on silicon operating up to 50 GHz. The half-wave voltage length product of the high-performance devices is 3.1 V.cm at DC and less than 6.5 V.cm up to 50 GHz. The 3 dB electrical bandwidth is 33 GHz, with an 18 dB extinction ratio. The third-order intermodulation distortion spurious free dynamic range is 97.3 dBHz 2∕3 at 1 GHz and 92.6 dBHz 2∕3 at 10 GHz. The performance demonstrated by the thin-film modulators is on par with conventional lithium niobate modulators but with lower drive voltages, smaller device footprints, and potential compatibility for integration with large-scale silicon photonics.
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The characteristic analysis of traveling wave electrooptic modulators on z-cut and x-cut lithium niobate substrates is carried out by using the finite element method based on a quasi-TEM approximation. The microwave effective index, the characteristic impedance, and the frequency dependent attenuations are calculated. The optical frequency response is also calculated and hence the 3-dB optical bandwidth is estimated. The bandwidth increases significantly for simultaneous velocity and impedance matching but is limited by the microwave losses in the dielectric material. Also, the unequal gap-width between the electrodes on a z-cut LiNbO3 substrate significantly affects the highest achievable bandwidth of the modulator. Optical 3-dB bandwidth of more than 140 GHz can be achieved with x-cut LiNbO3 substrate, when two backside slots are incorporated in the structure.
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This paper reports on the development of thin film lithium niobate (TFLN™) electro-optic devices at SRICO. TFLN™ is formed on various substrates using a layer transfer process called crystal ion slicing. In the ion slicing process, light ions such as helium and hydrogen are implanted at a depth in a bulk seed wafer as determined by the implant energy. After wafer bonding to a suitable handle substrate, the implanted seed wafer is separated (sliced) at the implant depth using a wet etching or thermal splitting step. After annealing and polishing of the slice surface, the transferred film is bulk quality, retaining all the favorable properties of the bulk seed crystal. Ion slicing technology opens up a vast design space to produce lithium niobate electro-optic devices that were not possible using bulk substrates or physically deposited films. For broadband electro-optic modulation, TFLN™ is formed on RF friendly substrates to achieve impedance matched operation at up to 100 GHz or more. For narrowband RF filtering functions, a quasi-phase matched modulator is presented that incorporates domain engineering to implement periodic inversion of electro-optic phase. The thinness of the ferroelectric films makes it possible to in situ program the domains, and thus the filter response, using only few tens of applied volts. A planar poled prism optical beam steering device is also presented that is suitable for optically switched true time delay architectures. Commercial applications of the TFLN™ device technologies include high bandwidth fiber optic links, cellular antenna remoting, photonic microwave signal processing, optical switching and phased arrayed radar.
Journal of Lightwave Technology, 2002
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A novel, wideband, lithium niobate electrooptic modulator
IEEE/OSA Journal of Lightwave Technology, 1998
A set of floating electrodes and a relatively thick buffer layer of low-dielectric constant is interspaced between the coplanar RF transmission line and the LiNbO3 substrate containing the optical wave-guide structure. The composite structure is designed to feature a 50-Ω characteristic impedance, to have an effective dielectric constant equal to that of the optical wave for close velocity match, and