Comparative Analysis of Nanowire Tunnel Field Effect Transistor for Biosensor Applications (original) (raw)
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Design and Development of Biosensors Based on Nano Tube Tunnel Field Effect Transistor
International Journal of Advances in Scientific Research and Engineering, 2023
Tunnel Field Effect Transistor (TFET) is gaining recognition and provide solution for Integrated Circuit (IC) design with low power. This is due to TFET's carrier transportation scheme, which utilizes inter-band tunneling of carriers, and its fabrication similarity to MOSFET. TFET presents itself as a widely adopted device structure that can overcome the limitations of MOSFETs. However, TFETs suffer from poor DC and Radio Frequency (RF) performance, mainly due to minority carrier transport and physical doping, which forms an abrupt junction in nanoscale devices due to RDFs. The junction-less device structure presents a viable solution to these issues without sacrificing DC parameters, even at high-frequency. Furthermore, the nanotube structure of TFET effectively reduces the Subthreshold Swing (SS) and leakage current due to better controllability of channel. The gate-all-around structure of nanotube TFET improves the surface potential distribution over the channel region, not only enhancing the DC characteristics of TFET but also improving the high-frequency parameters. The core gate Nano Tube (NT)-TFET is a promising device structure for exploring its application in the field of biomedical science as a biosensor. The proposed core gate nanotube structure provides a larger surface area for immobilizing biomolecules in the cavity, thus improving sensitivity analysis. This work proposes the utility of a novel core gate NT-TFET as a biosensor for detecting label-free biomolecules and DNAs. In this design, the detection capability of biosensor is improved, and the detection processes are investigated by high-frequency parameters of the proposed twin cavity dual metal NT-TFET biosensor. This study demonstrates the sensitivity analysis of biosensor based on transit time and device efficiency, which are two critical high-frequency parameters. This approach results in a biosensor with a lower annealing budget, making it more cost-effective and with comparatively higher sensitivity.
Micro & Nano Letters, 2019
A planer structure of a tunnel field effect transistor (TFET) faces many consequences of fabrication complexity and less controllability of the gate electrode over the channel. Therefore, in this Letter nanowire TFET (NW TFET) is presented for the biosensing application. For this purpose, a new design approach of NW TFET has been presented to overcome the issues of planer structure TFET and for improving sensitivity and sensing speed of the biosensor. In this concern, an addition electrode is placed around the source region and the cavity, which is generally created in the oxide region under the gate electrode, is extended towards the source oxide region. Thus, due to the presence of source electrode, additional holes are accumulated in the source surface region and forming a plasma layer of holes. Hence, abruptness at source/channel junction is created. So as the biomolecules enter into the cavity, the large variation is observed in electrostatic properties of the device due to different properties (dielectric/charge) of the biomolecules. These variations reflect as improved sensitivity of the biomolecule detector. Further to this, because of the supplementary source electrode, abrupt source/channel junction provides lower subthreshold swing, which reduces the response time of the device and increases the sensing speed of biomolecules detection.
2019
Abstract: In this paper, we have presented a heterojunction gate all around nanowire tunneling field effect transistor (GAA NW TFET) and have explained its characteristics in details. The proposed device has been structured using Germanium for source region and Silicon for channel and drain regions. Kane's band-to-band tunneling model has been used to account for the amount of band-to-band tunneling generation rate per unit volume of carriers which tunnel from valence band of source region to conduction band of channel. The simulations have been carried out by three dimensional Silvaco Atlas simulator. Using extensive device simulations, we compared the results of presented heterojunction structure with those of Silicon gate all around nanowire TFET. Whereas due to thinner tunneling barrier at the source-channel junction which leads to the increase of carrier tunneling rate, the heterojunction gate all around nanowire TFET shows excellent characteristics with high on-state curre...
IEEE Transactions on Electron Devices, 2015
In this paper, a short-gate tunneling-field-effecttransistor (SG-TFET) structure has been investigated for the dielectrically modulated biosensing applications in comparison with a full-gate tunneling-field-effect-transistor structure of similar dimensions. This paper explores the underlying physics of these architectures and estimates their comparative sensing performance. The sensing performance has been evaluated for both the charged and charge-neutral biomolecules using extensive device-level simulation, and the effects of the biomolecule dielectric constant and charge density are also studied. In SG-TFET architecture, the reduction of the gate length enhances its drain control over the band-to-band tunneling process and this has been exploited for the detection, resulting to superior drain current sensitivity for biomolecule conjugation. The gate and drain biasing conditions show dominant impact on the sensitivity enhancement in the short-gate biosensors. Therefore, the gate and drain bias are identified as the effective design parameters for the efficiency optimization. Index Terms-Band-to-band tunneling (BTBT), biosensors, dielectric modulated tunneling-field-effect transistor (DMTFET), tunnel field-effect transistor (FET).
Nanowire Tunnel Field Effect Transistors at High Temperature
Journal of Integrated Circuits and Systems, 2013
The aim of this work is to study how the performance of nanowire tunnel field effect transistors (TFETs) is influenced by temperature variation. First of all, simulated energy band diagrams were presented to justify its fundamental working principle and this analysis was compared to experimental data obtained for temperature ranging from 300 to 420 K. This methodology was performed for different nanowire diameters and bias conditions, leading to a deep investigation of parameters such as the ratio of on-state and off-state current (ION/IOFF) and the subthreshold slope (S). Three different transport mechanisms (band-to-band tunneling, Shockley-Read-Hall generation/recombination and trap-assisted tunneling) were highlighted to explain the temperature influence on the drain current. As the final step, subthreshold slope values for each configuration were compared to the room temperature. Therefore, it was observed that larger nanowire diameters and lower temperatures tended to increase...
Dielectric Modulated Tunnel Field-Effect Transistor—A Biomolecule Sensor
IEEE Electron Device Letters, 2012
In this letter, we propose a dielectric modulated double-gate tunnel field-effect transistor (DG-TFET)-based sensor for low power consumption label-free biomolecule detection applications. A nanogap-embedded FET-based biosensor has already been demonstrated experimentally, but a TFET-based biosensor has not been demonstrated earlier. Thus, a concept of TFET-based sensor is presented by analytical and simulation-based study. The results indicate better sensitivity toward two different effects (dielectric constant and charge of biomolecule) in comparison with a FET-based biosensor, and the additional advantages of CMOS compatibility, low leakage (low static power dissipation), and steep subthreshold slope make TFET an attractive alternative architecture for CMOS-based sensor applications.
Ge/GaAs Based Negative Capacitance Tunnel FET Biosensor: Proposal and Sensitivity Analysis
Silicon, 2022
A highly sensitive, accurate, fast and power efficient biosensor is the need of the hour. Undoubtedly, dielectrically modulated (DM) tunnel FET (TFET) assures better sensitivity as compared to MOSFET biosensors in case of label-free biosensing. However, there exists immense possibilities to upgrade TFET biosensor properties through the improvement of its DC characteristics. Therefore, in this paper a ferroelectric (FE) gate oxide and a hetero material (HM) source/drain-channel based TFET is designed for biosensor applications. A FE layer of HfZrO 2 above SiO 2 gives rise to negative capacitance (NC) effect that causes voltage amplification and hence, boosts subthreshold swing (SS) and I ON /I OFF ratio. In addition, use of a low band gap material (Ge) in source and a high band gap material (GaAs) in drain-channel junctions enhances the probability of band-to-band-tunneling (BTBT) of charge carriers. Further, to introduce biomolecules, a cavity is impinged below HfZrO 2 near SiO 2 above source/channel junction that modulates BTBT as a function of charge density (N f) and dielectric constant (K). This paper presents a detailed comparative analysis of Ge/GaAs-NCTFET and Ge/GaAs-TFET biosensors for different K and N f values from which we can conclude that the incorporation of NC effect in TFET biosensors leads to enhanced sensitivity with high speed and low power consumption.
Engineering Research Express, 2020
In this work, we examined the impact of gate work-function and back-gate bias to enhance sensing metrics of a Dielectric Modulated (DM) p-type Tunnel Field Effect Transistor (p-TFET) based biosensor. The sensing metrics, namely Sensitivity (S) and Selectivity (ΔS) are considerably improved by using a lower value of gate work-function and positive back gate voltages. It is shown that by appropriate selection of gate work-function and back gate bias, Band-to-Band Tunneling (BTBT) of carriers is reduced and a significant change in electrical characteristics is observed in a device with an empty cavity. Therefore, the relative change in the drain current due to the presence of biomolecules in the nanogap cavity is maximized. Results indicate a Sensitivity of ∼10 9 for 3-aminopropyltriethoxysilane (APTES) biomolecule, and Selectivity of ∼10 2 for APTES concerning Biotin biomolecule in an optimally designed p-TFET biosensor. The impact of location, as well as the charge of biomolecules, are also analyzed in this work. Results showcase the additional degree of freedom through device optimization which facilitates the tunability of sensing metrics for improved biosensor performance.
Recent Study on Schottky Tunnel Field Effect Transistor for Biosensing Applications
Silicon, 2022
In this review, we discussed highly sensitive biosensor devices which is having a more attractive, wide scope and development in the sensing field. Biosensor devices can detect the charged and neutral charged biomolecules such as protein, nucleic acids, antibody agents and viruses. Due to these highly sensitive biosensor devices, we mainly focused on schottky tunnel field-effect transistors (STFET), these transistors have unique properties such as enhanced transconductance and gate controllability, low leakage current etc. In addition, we studied the performances and challenges of STFET by dielectric modulation doping concentration, dielectric modulation, and heterostructure devices. Further, we have reviewed the comparison of STFET and conventional devices. This article reviews mainly on the study of high sensitivity analysis of STFET and modified Schottky-TFET structures for the use of biosensing applications.
Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET
IEEE Access, 2022
We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation. In the gate stacking, we proposed a tri-layer HfO 2 /TiO 2 /HfO 2 as a high-K dielectric and hafnium zirconium oxide (HZO) as a ferroelectric (FE) layer. The proposed GAA-TFET overcomes the thermionic limitation (60 mV/decade) of conventional MOSFETs' subthreshold swing (SS) thanks to its improved electrostatic control and quantum mechanical tunneling. Simultaneously, the NC state of ferroelectric materials improves TFET performance by exploiting differential amplification of the gate voltage under certain conditions. The most surprising discoveries of this device, which outperforms all previous results, are the very high I ON /I OFF ratio on the order of 10 11 and the enormous on-state current of 135 µA. The incorporation of the NC effect with a 9 nm HZO results in the lowest SS of 20.56 mV/dec (52.38% lower than baseline TFET) and the highest voltage gain of 6.58. Furthermore, the output characteristics revealed a large transconductance (g m) of 7.87 mS (10 3 order higher than the baseline TFET), drain-induced barrier lowering (DIBL) of 9.7 mV, and a threshold voltage of 0.53 V (37.65% lower than baseline TFET), all of which are significant. Thus, all of the results indicate that the proposed device structure may lead to a new route for electronic devices, creating higher speed and lower power consumption. INDEX TERMS BTBT, gate-all-around structure, heterojunction, nanowire tunnel-FET, negative capacitance.