Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation (original) (raw)
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Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC
Applied Physics Letters, 2014
The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, À5.2, and 30.3, respectively. The fundamental piezoresistive coefficients p 11 , p 12 , and p 44 of p-type 3C-SiC were obtained to be 1.5 Â 10 À11 Pa À1 , À1.4 Â 10 À11 Pa À1 , and 18.1 Â 10 À11 Pa À1 , respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors. V
The pseudo-Hall effect in n-type single crystal 3C-SiC(1 0 0) with low carrier concentration has been investigated. Low pressure chemical vapor deposition was used to grow the single crystal n-type 3C-SiC(1 0 0) and Hall devices were fabricated by photolithography and dry etch processes. A large pseudo-Hall effect was observed in the grown thin films which showed a strong dependence on the crystallographic orientation. N-type 3C-SiC(1 0 0) with low carrier concentration shows a completely different behavior of pseudo-Hall measurements as compared to the p-type 3C-SiC(1 0 0). Contrary to p-type, the effect is maximum along [1 0 0] crystallographic orientation and minimum along [1 1 0] orientation. Moreover, the observed pseudo-Hall effect is 50% larger than p-type with higher carrier concentration grown by the same process which makes n-type 3C-SiC(1 0 0) with low carrier concentration more suitable material for designing highly sensitive micro-mechanical sensors.
Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating
Scientific reports, 2016
Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.
4H-SiC: a material for high temperature Hall sensor
Sensors and Actuators A: Physical, 2002
In this work, we show that progress made in the crystal growth and device processing technology of 4H-SiC open the way to the development of Hall sensors presenting a low thermal drift with a large sensitivity (930 V/(A T)) in a wide temperature range. Above 300 K, low doped 4H-SiC epilayers are working in the exhaustion regime. Transport measurements show a constant value of the carrier density from 300 to 800 K. Simultaneously, the resistivity increases linearly at a rate of 3400 ppm/K between 500 and 800 K leading to the possibility to use the same samples as temperature sensor.
The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review
Journal of Microelectromechanical Systems, 2015
Silicon carbide (SiC) is one of the most promising materials for applications in harsh environments thanks to its excellent electrical, mechanical, and chemical properties. The piezoresistive effect of SiC has recently attracted a great deal of interest for sensing devices in hostile conditions. This paper reviews the piezoresistive effect of SiC for mechanical sensors used at elevated temperatures. We present experimental results of the gauge factors obtained for various poly-types of SiC films and SiC nanowires, the related theoretical analysis, and an overview on the development of SiC piezoresistive transducers. The review also discusses the current issues and the potential applications of the piezoresistive effect in SiC. [2015-0092] Index Terms-Silicon carbide, piezoresistive effect, piezoresistance, harsh environments, microelectromechanical systems (MEMS).