Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures (original) (raw)
Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
Yuya Yamaoka
physica status solidi (a), 2017
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AlGaN/GaN Heterostructures in High Electron Mobility Transistors
Vladimir Popok
2018
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Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors **
Tien Tung Luong
Chemical Vapor Deposition, 2014
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High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers
Maarten Leys
MRS Proceedings, 2003
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Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Engin Arslan
Journal of Applied Physics, 2009
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Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy
J. Faurie
physica status solidi (c), 2005
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Effects of high-temperature AlN buffer on the microstructure of AlGaN / GaN HEMTs
M. Çakmak
2013
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Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation
Tung Luong
Electronic Materials Letters, 2015
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Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers
Jennifer Bardwell
Japanese Journal of Applied Physics, 2013
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N / GaN ( x 1⁄4 0 : 245 { 0 : 325 ) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
naoteru shigekawa
2010
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Material optimisation for AlGaN/GaN HFET applications
Jan Cheyns
Journal of Crystal Growth, 2001
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Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors
jae kyoung mun
Microwave and Optical Technology Letters, 2012
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Influence of growth process scheme on the properties of AlGaN/AlN/GaN heterostructures
Regina Paszkiewicz
physica status solidi (c), 2013
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Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD
suleyman ozcelik
Current Applied Physics, 2012
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Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs
M. Çakmak
Semiconductors, 2013
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Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
B. Grimbert
Applied Physics Express, 2011
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High electron mobility transistors based on the AlN/GaN heterojunction
Katerina Tsagaraki, Adikimenakis Adam
Microelectronic Engineering, 2009
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Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
Fabio Marino
IEEE Transactions on Electron Devices, 2000
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Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
Alexey Vert
Journal of Electronic Materials, 2003
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GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
Michael Shur
Applied Physics Letters, 2000
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Study of the n + GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
Steven Denbaars
Japanese Journal of Applied Physics, 2007
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Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates
David Deen
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Theoretical model of transport characteristics of AlGaN/GaN high electron mobility transistors
Asghar Asgari
2005
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Fabrication and Characterization of Thin-Barrier AlGaN/AlN/GaN HEMTs
Martin Fagerlind
IEEE Electron Device Letters, 2011
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AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
Jian Tang
2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008
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Al 2 O 3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
Sanguan Anantathanasarn
Japanese Journal of Applied Physics, 2004
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Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering
Roman Stoklas
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2011
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MOCVD AlGaN/GaN HFET's Material Optimization and Devices Characterization
Minseub Shin
MRS Proceedings, 2003
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