Magneto-optical properties of InSb for terahertz applications (original) (raw)

Magneto-Optical Properties of InSb for Spectral Filtering in the Far-Infrared

arXiv: Optics, 2020

We present measurements of the Faraday effect in n-type InSb. The Verdet coefficient was determined for a range of carrier concentrations near 101710^{17}1017 cm−3cm^{-3}cm−3 in the lambda\lambdalambda = 8 mu\mumum - 12 mu\mumum far-infrared regime. The absorption coefficient was measured and a figure of merit calculated for each sample. From these measurements, we calculated the carrier effective mass and illustrate the variation of the figure of merit with wavelength. A method for creating a tunable bandpass filter via the Faraday rotation is discussed along with preliminary results from a prototype device.

Magneto-optical properties of InSb for infrared spectral filtering

Journal of Applied Physics, 2021

We present measurements of the Faraday effect in n-type InSb. The Verdet coefficient was determined for a range of carrier concentrations near 1017 cm−3 in the λ=8–12μm long-wave infrared regime. The absorption coefficient was measured and a figure of merit was calculated for each sample. From these measurements, we calculated the carrier effective mass and illustrated the variation of the figure of merit with the wavelength. A method for creating a tunable bandpass filter via the Faraday rotation is discussed along with preliminary results from a prototype device.

Experimental demonstration of magnetoplasmon polariton at InSb(InAs)/dielectric interface for terahertz sensor application

Scientific reports, 2017

We experimentally demonstrate surface plasmon resonance (SPR) in the terahertz range in InSb and InAs. The surface plasmon is excited on the interface between a thin polymer film and the semiconductor using a silicon prism in Otto configuration. The low effective mass of InSb and InAs permits tuning of the SPR by an external magnetic field in the transversal configuration. The data show a good agreement with a model. Strong excitation of the surface plasmon is present in both materials, with a shifting of resonance position by more than 100 GHz for the field of 0.25 T, to both higher and lower energies with opposite orientation of the magnetic field. Applicability of the terahertz SPR sensor is discussed, along with modeled design for the Kretschmann configuration.

Tuning the inherent magnetoresistance of InSb thin films

Applied Physics Letters, 2006

We have investigated the 300 K inherent magnetoresistance of undoped InSb epilayers grown on GaAs(001) by molecular-beam epitaxy. The magnetoresistance of these films can be described well using a simplified model that incorporates gradation of properties away from the InSb/GaAs interface and the interplay between conduction and impurity bands. Although there is no significant intrinsic contribution in InSb bulk crystalline (001) materials due to its isotropic Fermi surface and mobility tensor, the linear and quadratic terms in the magnetoresistance as well as the overall magnitude can be tuned by varying the film thickness from 100 to 2000 nm.