Assessment of Surface Damage of Gallium Arsenide due to Reactive Ion Etching (original) (raw)
Related papers
Microelectronic Engineering
Modeling of altered layer formation during reactive ion etching of GaAs
Applied Surface Science, 2012
Reactive ion etching of GaAs using CCl2F2 and the effect of Ar addition
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1983
Japanese Journal of Applied Physics, 1998
Melanie Will-Cole -- Please note: Publications & Patents listed under M.W. Cole
Journal of Applied Physics, 1995
Journal of The Electrochemical Society, 1990
Dry etching techniques for GaAs ultra-high vacuum chamber integrated processing
Microelectronic Engineering, 1994
CCl 4 -based reactive ion etching of semi-insulating GaAs and InP
Czechoslovak Journal of Physics, 2006
Photoreflectance Characterization of Etch-Induced Damage in Dry Etched GaAs
MRS Proceedings, 1993
The Open Plasma Physics Journal
Chemical etching of (100) GaAs in a sulphuric acid-hydrogen peroxide-water system
Journal of Materials Science, 1987
Synchrotron-radiation-induced anisotropic wet etching of GaAs
Applied Physics Letters, 1999
Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface
Applied Physics Letters, 1995
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2001
Layer-by-layer etching of GaAs (110) with halogenation and pulsed-laser irradiation
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998
The oxidation of surface layers during reactive ion etching of GaAs in CF2Cl2+O2 and O2 plasmas
Applied Surface Science, 1999
High-rate electron cyclotron resonance etching of GaAs via holes
Materials Science and Engineering: B, 2000
Etching of GaAs(100) with Aqueous Ammonia Solution: A Synchrotron-Photoemission Spectroscopy Study
The Journal of Physical Chemistry C, 2010
Dry etch processing of GaAs/AlGaAs high electron mobility transistor structures
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
Sample size effect in photoelectrochemical etching of n-GaAs
Derrick C Mancini, N. Moldovan
Applied Physics Letters, 2000
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
Dry etching of III–V semiconductors in CH3I, C2H5I, and C3H7I discharges
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992
Wet etching of GaAs using synchrotron radiation x rays
Derrick C Mancini, N. Moldovan
Journal of Applied Physics, 2001
Characteristics of in situ Cl2 etched/regrown GaAs/GaAs interfaces
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
Rate constants for the etching of gallium arsenide by atomic chlorine
Plasma Chemistry and Plasma Processing, 1991
Excimer laser assisted etching of AlGaAs and GaAs
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
Reconstruction dependence of the etching and passivation of the GaAs(001) surface
JETP Letters, 2010
Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor
Journal of Crystal Growth, 1998