InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors (original) (raw)
Investigation of InGaN/GaN multiple quantum wells with strain relief behavior for light-emitting diodes
Hsin-Chun Lu
Nano/Micro Engineered and Molecular Systems, 2009
View PDFchevron_right
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices
Geeta Mutta, Enrico Zanoni, Anna Cavallini
View PDFchevron_right
Strain analysis of InGaN/GaN multi quantum well LED structures
suleyman ozcelik
Crystal Research and Technology, 2012
View PDFchevron_right
Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer
Tzer-En Nee
Japanese Journal of Applied Physics, 2008
View PDFchevron_right
Efficiency enhancement of blue light emitting diodes by eliminating V-defects from InGaN/GaN multiple quantum well structures through GaN capping layer control
Intekhab Alam Khan
Applied Surface Science, 2018
View PDFchevron_right
Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates
Abdul Karim
Applied Physics Letters, 2000
View PDFchevron_right
Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths
Tien-chang Lu
IEEE Photonics Technology Letters, 2000
View PDFchevron_right
400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
Li Wei
IEEE Journal of Selected Topics in Quantum Electronics, 2002
View PDFchevron_right
InGaN blue light-emitting diodes with optimized n-GaN layer
Chuong Tran
Light-Emitting Diodes: Research, Manufacturing, and Applications III, 1999
View PDFchevron_right
Secrets of GaN substrates properties for high luminousity of InGaN quantum wells
M. Bockowski, Pawel Prystawko
View PDFchevron_right
High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells
Tien-chang Lu
Applied Physics Letters, 2014
View PDFchevron_right
The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes
Joe-Air Jiang
Journal of Luminescence, 2012
View PDFchevron_right
Secrets of GaN substrates properties for high luminousity of InGaN quantum wells
P. Prystawko
Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 2008
View PDFchevron_right
Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experiment
Boris Yavich
physica status solidi (c), 2010
View PDFchevron_right
Nano-structures and luminescence mechanisms of InGaN/GaN multiple quantum well light emitting diodes
Zhe Feng
The International Conference on Electrical Engineering, 2008
View PDFchevron_right
Microstructural defect properties of InGaN/GaN blue light emitting diode structures
Ceren başköse
Journal of Materials Science: Materials in Electronics, 2014
View PDFchevron_right
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
Zhengang Ju
ACS Photonics, 2014
View PDFchevron_right
Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy
Zahrah Alnakhli
Optics Letters
View PDFchevron_right
Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
Y. Yin
Journal of Crystal Growth, 2011
View PDFchevron_right
Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures
Fabien Massabuau
physica status solidi (c), 2014
View PDFchevron_right
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs
Mu-Jen Lai
Microelectronics Reliability, 2010
View PDFchevron_right
Effect of p-GaN Layer and High-k Material in InGaN/GaN LED for Optical Performance Enhancement
N.M. Siva Mangai 1584
Research Square (Research Square), 2023
View PDFchevron_right
Improved electroluminescence on nonpolarm -plane InGaN/GaN quantum wells LEDs
Steven Denbaars
physica status solidi (RRL) – Rapid Research Letters, 2007
View PDFchevron_right
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode
Claudia Casu
Micromachines
View PDFchevron_right
Investigation of electron energy states in InGaN/GaN multiple quantum wells
Ian Ferguson
Physica B: Condensed Matter, 2012
View PDFchevron_right
The effects of thin capping layers between quantum wells and barriers on the quantum efficiency enhancement in InGaN-based light emitting diodes
Xing Li
View PDFchevron_right
Optimization towards reduction of efficiency droop in blue GaN/InGaN based light emitting diodes
Chenna Dhanavantri
Optik, 2012
View PDFchevron_right
The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates
Duncan Allsopp
Semiconductor Science and Technology, 2013
View PDFchevron_right
A New Structure for Multi Quantum Well InGaN/GaN Light Emitting Diodes with Emission Wavelength of 400-450 nm
Abbas Zarifkar
Optics and Photonics Society of Iran, 2014
View PDFchevron_right
Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structures
E. Armour
Journal of Crystal Growth, 2006
View PDFchevron_right
Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes
Asif Khan
Applied Physics Letters, 1997
View PDFchevron_right
Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
Nicolas Chery
Journal of Applied Physics, 2020
View PDFchevron_right
Study of InGaN–GaN Light-Emitting Diodes With Different Last Barrier Thicknesses
Tien-chang Lu
IEEE Photonics Technology Letters, 2000
View PDFchevron_right
Temperature-dependent light-emitting characteristics of InGaN/GaN diodes
Valeriu Filip
Microelectronics Reliability, 2009
View PDFchevron_right