Strain relaxation of GaAs/Ge crystals on patterned Si substrates (original) (raw)

Integration of GaAs on Ge/Si towers by MOVPE

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A. Mazuelas

Applied Physics A Solids and Surfaces, 1991

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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si[sub 1−x]Ge[sub x] step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications

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HETEROEPITAXY OF GaAs ON Si: METHODS TO DECREASE THE DEFECT DENSITY IN THE EPILAYER

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Defect Control in Semiconductors, 1990

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Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

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The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures

Marina Berti

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Crystal Research and Technology, 2000

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Multi-technique characterization of MOVPE-grown GaAs on Si

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Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy

Thomas Marschner

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