The Review of Laser Engineering Topical Papers on Thin Films Fabrication and Control. Laser Atomic Layer Epitaxy (original) (raw)

Material Dependence of Energy Spectra of Fast Electrons Generated by Use of High Contrast Laser

The Review of Laser Engineering, 2013

We studied the material dependence of electron acceleration with ultra-intense laser light at an intensity of 5 10 19 W/cm 2. Recent particle simulations have shown that the average energy of fast electrons stays lower than the prediction of ponderomotive scaling if intense laser light interacts directly with the target material. To control the fast electron energy spectra, we performed an experiment at the J-KAREN laser facility. The observed electron spectra show that the slope temperature for aluminum is 1.4 times higher than gold. The enhancement is strongly related to the average ioniation degree in the thin preplasma region in the PIC simulation result. The maximum proton energy reaches 10 MeV, and it shows the same values for Al, Cu and Au. The PIC simulations exhibit the values of the sheath Þ eld at the target rear for Al, Cu, and Au, all of which are the same as the experiment.

Excimer Laser Annealing of Hydrogen Modulation Doped a-Si Film

Journal of the Japan Institute of Metals, 2007

A novel low temperature crystallization method is proposed; the excimer laser annealing (ELA) of amorphous silicon (a Si) with a hydrogen modulation doped layer (ELHMD). The effects of hydrogen on low energy crystallization by conventional ELA and ELHMD were investigated. As the hydrogen concentration increases, the crystallinity of the polycrystalline silicon (poly Si) prepared at a low energy density improves. It is considered that the nucleation is enhanced by the desorption energy of hydrogen from the Si H 2 bond during the Si melting. In addition, the film exfoliation by H 2 burst can be suppressed using HMD a Si film.

Surface Ablation by Soft X-ray Laser Pulse for EUV nano-scale fabrication

The Japan Society of Applied Physics, 2018

量研 , 大阪大 , NTT-AT, 兵県大 , 早稲田大 , 宇都宮大 , JASRI, 理研 , 東北大 , 豊田理研 , 錦野 将元 ,石野 雅彦 , T-H Dinh, 長谷川 登 , A. Faenov, T. Pikuz, 市丸 智 , 木下 博雄 , 坂 上 和之 , 東口 武史 , 犬伏 雄一 , 今 亮 , 大和田 成起 , 羽多野 忠 , 鷲尾 方一 , 末元 徹 , 河内 哲哉 1 QST, Osaka Univ., NTT-AT, Univ. Hyogo, Waseda Univ., Utsunomiya Univ. , JASRI, Riken, Tohoku Univ., TPCRI, M. Nishikino, M. Ishino, T-H. Dinh, N. Hasegawa, A. Faenov, T. Pikuz, S. Ichimaru, H. Kinoshita, K. Sakaue, T. Higashiguchi, Y. Inubushi, A. Kon, S. Ohwada, T. Hatano, H. Washio, T. Suemoto, T. Kawachi, E-mail:nishikino.masaharu@qst.go.jp