Large area single crystal (0001) oriented MoS2 (original) (raw)
Related papers
Mo6S4.5I4.5Nanowires: Structure Studies by HRTEM and Aberration Corrected STEM
Journal of Physics: Conference Series, 2006
Contact Engineering High-Performance n-Type MoTe2 Transistors
Nano Letters, 2019
Low temperature MOS device modeling
Proceedings of the Workshop on Low Temperature Semiconductor Electronics
The interstitial C i O i defect in bulk Si and Si 1 x Ge x
Journal of Physics: Condensed Matter, 2004
On the nature and structure of a new MoVTeO crystalline phase
Chemistry of …, 2002
Degradation of hard MOS devices at low temperature
Journal de Physique IV (Proceedings), 2002
Fundamentals of Semiconductors
Proceedings of the IODP, 2014
Low dimensional III-V compound semiconductor structures
SPIE Proceedings, 2009
Proceedings of the IODP, 2014
VLSI: Integrated Systems on Silicon
Alberto Sangiovanni Vincentelli
1997
Integrating and enhancing for ASIC design using MOSIS fabrication
IEEE Transactions on Nuclear Science, 1990
Sub3 V1 ESI CC-COM-05-2013-044018.R2
M. González-jaén, Sergi Morais
S2.0 S0925753522001291 main (1)
Electroluminescence in Single Layer MoS2
Nano Letters, 2013
The Alpha 21264: a 500 MHz out-of-order execution microprocessor
Proceedings IEEE COMPCON 97. Digest of Papers
Proceedings of the IODP, 2014
1992
S2.0 S0032386121003542 main(1)
S2.0 S1010603024003320 main (1)
Amorphous-silicon devices start to shape up
Microelectronics Reliability, 1983
2014
D7d30e198b7436133ebe729d5b98d3f4 (2)
2000
Advances in MoS2-Based Field Effect Transistors (FETs)
Nano-Micro Letters, 2015
Micromorphic Crystal Plasticity
Handbook of Nonlocal Continuum Mechanics for Materials and Structures, 2018
1994
Study of silicon thickness optimization for LSST
High Energy, Optical, and Infrared Detectors for Astronomy II, 2006