Modeling of a heterojunction bipolar transistor based AlGaAs / GaAs (original) (raw)
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Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)
International Journal of RF and Microwave Computer-Aided Engineering, 2000
The parameter extraction procedure is discussed in ce c detail. Furthermore, it is demonstrated that the model is fully scalable with respect to emitter area by comparison of simulated and measured S-parameters in the frequency range from DC to 20 GHz. Based on the small signal model, a nonlinear large signal model with the same ⌸-type topology is proposed. It has a small number of parameters and considers self-heating, which is particularly important for HBTs. Parameter extraction is discussed and it is demonstrated by comparison of simulation and measurement that the model can accurately predict the DC characteristics of a HBT for ambient temperatures ranging from 20 to 100ЊC.
IEEE Journal of Solid-state Circuits, 1994
The large signal dc characteristics of AlGaAslGaAs heterojunction bipolar transistors (HBT) at high temperatures (27"-300"C) are reported. A high-temperature SPICE model is developed which includes the recombination-generation current components and avalanche multiplication which become extremely important at high temperatures. The effect of avalanche breakdown is also included to model the current due to thermal generation of electronhole pairs causing breakdown at high temperatures. A parameter extraction program is developed and used to extract the model parameters of HBT's at different temperatures. Fitting functions for the model parameters as a function of temperature are developed. These parameters are then used in the SPICE Ebers-Moll model for the dc characterization of the HBT at any temperature between (27"-300"C).
A user compiled large signal model for GaAs heterojunction bipolar transistors
This paper presents a nonlinear circuit simulation model for III-V Heterojunction Bipolar Transistors (HBTs), implemented using C code in the Agilent ADS circuit simulator as a User Compiled Model (UCM). The UCM is based-on a recently developed compact large-signal model, which includes all physical effects taking place in power III-V based HBT devices. The validity and the accuracy of the UCM are assessed by comparing its simulation results to both measurements and Symbolically Define Device (SDD) simulations in DC, multibias small-signal S-parameters and large-signal microwave power characteristics for a 2x20 m 2 emitter area InGaP/GaAs transistor.
Computational Materials Science, 2001
A theoretical model is proposed for the predictive simulation of the performance and reliability of heterojunction bipolar transistors (HBTs) operating at high temperatures and pressures at any levels of carrier injections. The model emphasizes the eects of heteroemitter interface band osets and space charge region recombination on the carrier transport, current gain and 1=f noise in HBTs any level of carrier injections. The extended tight binding model (ETB) and statistical thermodynamic model are used to study the material properties of heteroemitter as a function of composition, temperature, strain, and pressure. The results are implemented in the developed extended drift±diusion (EDD) model to study the current±voltage, current gain and 1=f noise characteristics of HBTs. The model suggests that decreasing (increasing) the emitter alloy composition increases (decreases) the heteroemitter space charge recombination current and base current and decreases (increases) the dc current gain of Npn HBTs. Numerical analysis indicates that the dc emitter and base current±voltage, dc current gain, and 1=f noise characteristics of Npn-(Al, Ga)As/GaAs HBTs and npn-GaAs BJTs are dominated by the heteroemitter space charge region recombination process for small forward biases at T 300 K. The model can be useful in predicting the performance of HBTs operating at high temperatures, pressures for any level of carrier injections.
Microwave characterization and modeling of GaAs/AlGaAs heterojunction bipolar transistors
The characterization and modeling of a microwave GaAs/AlGaAs heterojunction Bipolar Transistor (HBT) are discussed. The de-embedded scattering parameters are used to derive a small signal lumped element equivalent circuit model using EEsof's "Touchstone" software package. Each element in the equivalent circuit model is shown to have its origin within the device. The model shows good agreement between the measured and modeled scattering parameters over a wide range of bias currents. Further, the MAG and Ih211 calculated from the measured data and the MAG and Ih211 predicted by the model are also in good agreement. Consequently the model should also be capable of predicting the fmax and f T of other HBTs.
Transferred-electron induced current instabilities in heterojunction bipolar transistors
Applied Physics Letters, 1995
Current driven instabilities in the collector of III-V heterojunction bipolar transistors ͑HBT͒ are investigated. Numerical simulations indicate that in a modified AlGaAs/GaAs HBT the collector current shows oscillatory behavior due to the transferred-electron ͑Gunn-Hilsum͒ effect. Influence of the Kirk effect as well as conditions for oscillation are discussed. © 1995 American Institute of Physics.