A user compiled large signal model for GaAs heterojunction bipolar transistors (original) (raw)

Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)

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2007

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32nd European Microwave Conference, 2002, 2002

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IEEE Transactions on Microwave Theory and Techniques, 2001

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InGaP-GaAs HBT Statistical Modeling for RF Power Amplifier Designs

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asma bedia

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Two-Dimensional Physical Ac-Simulation of Gaas HBTS

Vassil Palankovski

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Ralf Doerner

IEEE MTT-S International Microwave Symposium Digest, 2005., 2005

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Large signal modelling of GaAs/AlGaAs HBT's with separation of the surface recombination current

Charlotta M Hedenas

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Large-signal temperature-dependent DC model for heterojunction bipolar transistors

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IEE Proceedings - Microwaves, Antennas and Propagation, 1995

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Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor

N. Labat

Solid-State Electronics, 2005

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Andre Metzger, P. Zampardi

2006 European Microwave Integrated Circuits Conference, 2006

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Analytical modeling of pnp InP/InGaAs heterojunction bipolar transistors

Marc Cahay

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Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base

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A Universal Large-Signal Model for Hetero Field Effect Transistors

Hermann Schumacher

2004

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Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide

Vassil Palankovski, Siegfried Selberherr

IEEE Transactions on Electron Devices, 2001

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Muhammed Izharuddin

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Omar Farooq

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DC modeling and characterization of AlGaAs/GaAs heterojunction bipolar transistors for high-temperature applications

Mohamed Osman

IEEE Journal of Solid-state Circuits, 1994

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New GaInP/GaAS-HBT Large-Signal Model for Power Applications

Ralf Doerner

28th European Microwave Conference, 1998, 1998

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Predictive Modeling of InGaP/GaAs HBT Noise Parameters from DC and S-Parameter Data for Wireless Power Amplifier Design

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