On the microstructure of AlxGa1− xN layers grown on 6H-SiC (0001) substrates (original) (raw)
On the microstructure of Al[sub x]Ga[sub 1−x]N layers grown on 6H-SiC(0001) substrates
R. Kroger
Journal of Applied Physics, 2005
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Compositional Fluctuations in AlxGa1-xN Layers grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy
Roland Kröger
MRS Proceedings, 2002
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Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD
Z. Liliental-weber
MRS Proceedings, 1999
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Structural quality and ordering of MBE grown AlxGa1−xN-layers
Lutz Kirste
Materials Science and Engineering: B, 2001
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The structural quality of AlxGa1−xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy
Suk Choi
Applied Physics Letters, 2009
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Characteristics of high Al content AlxGa1−xN grown by metalorganic chemical vapor deposition
Zhiyong Ma
Microelectronics Journal, 2007
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Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric-pressure MOVPE
Amor Bchetnia
physica status solidi (a), 2012
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Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
Christian Zorman
MRS Internet Journal of Nitride Semiconductor Research
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Investigations on the undersaturated liquid phase epitaxial growth of AlxGa1−xAs
P. Ramasamy
Journal of Crystal Growth, 2000
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Structural characterisation of Al grown on group III-nitride layers and sapphire by molecular beam epitaxy
Michael W Fay
Journal of Crystal Growth, 2002
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The structural quality of Al[sub x]Ga[sub 1−x]N epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy
Z. Liliental-weber
Applied Physics Letters, 2009
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[0001] composition modulations in Al[sub 0.4]Ga[sub 0.6]N layers grown by molecular beam epitaxy
Brett Strawbridge
Applied Physics Letters, 2008
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Surface properties of AlN and Al x Ga1−x N epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy
Shuchang Wang
Journal of Materials Science: Materials in Electronics, 2014
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Effects of thermal annealing on the morphology of the AlxGa(1−x)N films
M. Çakmak
Materials Science in Semiconductor Processing, 2009
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Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
Michael Shur
Journal of Crystal Growth, 2002
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Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1−xN epitaxial layers on sapphire (0001)
Govind Gupta
Journal of Alloys and Compounds, 2018
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Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers
Louis Guido
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Growth Design for High Quality AlxGa(1-x)N Layer with High AlN-fraction on Si (111) Substrate by MOCVD
Abheek Bardhan
Journal of Crystal Growth, 2022
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Room-temperature heteroepitaxy of single-phase Al 1 − x In x N films with full composition range on isostructural wurtzite templates
Carlos A Ramos
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Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition
Hiroshi Fujioka
Applied Physics Express, 2009
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Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al[sub 2]O[sub 3] substrate
Jung-Hae Choi
Applied Physics Letters, 2004
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MBE growth and characterisation of AlxGa1−xSb layers on GaSb substrates
B. Jenichen
Journal of Crystal Growth, 1999
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Effect of Al-mole fraction in AlxGa1−xN grown by MOCVD
B. Kuppulingam
2014
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Growth of GaAs/AlxGa1-xAs layers by LPE method and their characterization by SIMS
borhan arghavani nia
European Physical Journal-applied Physics, 2011
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MBE of AlN on SiC and influence of structural substrate defects on epitaxial growth
Albrecht Winnacker
Journal of Crystal Growth, 1999
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Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers
Michael Hawkridge
Journal of Crystal Growth, 2009
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Comprehensive analysis of the composition determination in epitaxial Al Ga As films: A multitechnique approach
A. Bruchhausen
Materials Science in Semiconductor Processing, 2020
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Non-uniform strain relaxation in InxGa1−xAs layers
Luisa Gonzalez
Solid-State Electronics, 1996
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Lattice Deformation in AlxGa1-xAs Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions
Andrzej Turos
Acta Physica Polonica A, 1999
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Long range order in Al[sub x]Ga[sub 1−x]N films grown by molecular beam epitaxy
Theodore Moustakas
Applied Physics Letters, 1997
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HR-XRD and PL studies of Al x Ga 1-x N layers grown on Si (111) substrate by plasma assisted MBE
Haslan Abu Hassan
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Growth of AIN on Etched 6H-SiC(0001) Substrates via MOCVD
J. Chaudhuri
physica status solidi (a), 2001
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