Characterization of GaN epitaxial films grown on SiNx and TiNx porous network templates - art. no. 61210B (original) (raw)

Effect of nano-porous SiNx interlayer on propagation of extended defects in semipolar (11-22)-orientated GaN

Morteza Monavarian

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Efficacy of single and double SiN[sub x] interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

Yong-Tae Moon

Journal of Applied Physics, 2005

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Growth of GaN on porous SiC and GaN substrates

Paul Bohn

Journal of Electronic Materials, 2003

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High quality GaN layers grown by hydride vapor phase epitaxy — a high resolution X-ray diffractometry and synchrotron X-ray topography study

Jharna Chaudhuri

Materials Science and Engineering: B, 2000

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In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN∕GaN cracks

Chunli Liu

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Dislocation density reduction in GaN using porous SiN interlayers

Yong-Tae Moon

physica status solidi (a), 2005

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The effect of Si x N y interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD

Suleyman Ozcelik

Current Applied Physics, 2009

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Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment

Daniela Gogova

Journal of Crystal Growth, 2010

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Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

H. Morkoç

Applied Physics Letters, 2005

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Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth

Scott Mc Pherson

MRS Proceedings, 1998

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Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

H. Morkoç, Henry O Everitt

Applied Physics Letters, 2005

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Transmission electron microscopy of GaN layers grown by ELO and micro - ELO techniques

Andrew Steckl

physica status solidi (c), 2005

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Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers

Rozaliya I Barabash

physica status solidi (a), 2006

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Tem Study of Defects in Laterally Overgrown GaN Layers

Z. Liliental-weber

MRS Proceedings, 1998

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Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

H. Morkoç

Journal of Applied Physics, 2016

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White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film

Rozaliya I Barabash

physica status solidi (b), 2008

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Improved MOCVD growth of GaN on Si‐on‐porous‐silicon substrates

Azfar Amir

physica status solidi c, 2010

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Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire

Boris Meyler

Journal of Electronic Materials, 2003

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Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals

Theeradetch Detchprohm

Japanese Journal of Applied Physics, 2001

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Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

Patrick McNally

physica status solidi (a), 2001

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Can Laterally Overgrown GaN Layers be free of Structural Defects?

Z. Liliental-weber

MRS Proceedings, 2000

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Effect of SiN treatment on GaN epilayer quality

Belgacem Jani

physica status solidi (a), 2004

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Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

W. Ashmawi

Journal of Electronic Materials, 1999

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Low-dislocation-density GaN from a single growth on a textured substrate

Carol Ashby

Applied Physics Letters, 2000

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A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy

Michael Kneissl

Applied Physics Letters, 2008

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Differences and similarities between structural properties of GaN grown by different growth methods

Jacek Jasinski

2002

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Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers

Colin Humphreys

MRS Proceedings, 2006

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Dislocation Reduction and Structural Properties of GaN layers Grown on N+-implanted AlN/Si (111) Substrates

Muhammad Jamil

MRS Proceedings, 2005

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Characterization of MOCVD grown GaN on porous SiC templates

Yong-Tae Moon

physica status solidi (c), 2005

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Reduction in defect density over whole area of (100)m -plane GaN using one-sidewall seeded epitaxial lateral overgrowth

Satoshi Kamiyama

Physica Status Solidi B-basic Solid State Physics, 2007

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Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction

Rosa Chierchia

2007

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