Characterization of GaN epitaxial films grown on SiNx and TiNx porous network templates - art. no. 61210B (original) (raw)
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The effect of Si x N y interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD
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Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy
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Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
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Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates
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Transmission electron microscopy of GaN layers grown by ELO and micro - ELO techniques
Andrew Steckl
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Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers
Rozaliya I Barabash
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Tem Study of Defects in Laterally Overgrown GaN Layers
Z. Liliental-weber
MRS Proceedings, 1998
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Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth
H. Morkoç
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White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film
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physica status solidi (b), 2008
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Improved MOCVD growth of GaN on Si‐on‐porous‐silicon substrates
Azfar Amir
physica status solidi c, 2010
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Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire
Boris Meyler
Journal of Electronic Materials, 2003
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Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals
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Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography
Patrick McNally
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Can Laterally Overgrown GaN Layers be free of Structural Defects?
Z. Liliental-weber
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Effect of SiN treatment on GaN epilayer quality
Belgacem Jani
physica status solidi (a), 2004
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Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
W. Ashmawi
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Low-dislocation-density GaN from a single growth on a textured substrate
Carol Ashby
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A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
Michael Kneissl
Applied Physics Letters, 2008
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Differences and similarities between structural properties of GaN grown by different growth methods
Jacek Jasinski
2002
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Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers
Colin Humphreys
MRS Proceedings, 2006
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Dislocation Reduction and Structural Properties of GaN layers Grown on N+-implanted AlN/Si (111) Substrates
Muhammad Jamil
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Characterization of MOCVD grown GaN on porous SiC templates
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Reduction in defect density over whole area of (100)m -plane GaN using one-sidewall seeded epitaxial lateral overgrowth
Satoshi Kamiyama
Physica Status Solidi B-basic Solid State Physics, 2007
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Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction
Rosa Chierchia
2007
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