Growth of GaN on porous SiC and GaN substrates (original) (raw)

physica status solidi (c), 2005

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

physica status solidi (a), 2001

Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Michael Reshchikov

Applied Physics Letters, 2000

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Journal of Applied Physics, 2006

Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

Colm O'Dwyer

CrystEngComm, 2014

Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

James Speck

physica status solidi (a), 2002

Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

H. Morkoç

Applied Physics Letters, 2005

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Journal of Electronic Materials, 2001

Porosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy

Adel Najar

Journal of Applied Physics, 2012

Effect of Si doping on the growth and microstructure of GaN grown on Si(111) using SiC as a buffer layer

Masakazu Ichikawa

Journal of Crystal Growth, 2002

Characterization of GaN layers grown on porous silicon

Belgacem Jani

Materials Science and Engineering: B, 2001

Improved MOCVD growth of GaN on Si‐on‐porous‐silicon substrates

Azfar Amir

physica status solidi c, 2010

Interfacial effects during GaN growth on 6H-SiC

Jostein Grepstad

Journal of Electronic Materials, 1999

Dislocation density reduction in GaN using porous SiN interlayers

physica status solidi (a), 2005

Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Christian Zorman

MRS Internet Journal of Nitride Semiconductor Research

High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy

Iulian Gherasoiu

Journal of Electronic Materials, 2001

Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy

Pierre Lefebvre

2002

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Arnel Salvador

Materials Science and Engineering: B, 1997

Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template

Hartono Hartono

2007

Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment

Jacek Jasinski

Journal of Crystal Growth, 2004

Low-dislocation-density GaN from a single growth on a textured substrate

Carol Ashby

Applied Physics Letters, 2000

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

W. Ashmawi

Journal of Crystal Growth, 2001

Pendeo-epitaxial growth of gallium nitride on silicon substrates

Christian Zorman

Journal of Electronic Materials, 2000

Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

Alexander Satka

Journal of Crystal Growth, 2017

Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire

Boris Meyler

Journal of Electronic Materials, 2003

High quality GaN layers grown by hydride vapor phase epitaxy — a high resolution X-ray diffractometry and synchrotron X-ray topography study

Jharna Chaudhuri

Materials Science and Engineering: B, 2000

TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

MRS Proceedings, 1999

Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

Applied Physics Letters, 2005

Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001)

Applied Physics Letters, 2001

Characterization of GaN epitaxial films grown on SiNx and TiNx porous network templates - art. no. 61210B

Henry O Everitt, H. Morkoç

Gallium Nitride Materials and Devices, 2006

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

Austin Bavard

Journal of Crystal Growth, 2011

Growth of GaN on SiC substrates by MBE

Theodore Moustakas