Mechanisms of ion-induced GaN thin layer splitting (original) (raw)

Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN

A. Guittoum

Physical Review B, 2010

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Ion-beam-induced porosity of GaN

Vincent Craig, Chennupati Jagadish

Applied Physics Letters, 2000

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Ion implantation effects on the microhardness and microstructure of GaN

M. Katsikini

Journal of Crystal Growth, 2001

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Effect of In implantation and annealing on the lattice disorder and nano-mechanical properties of GaN

Panagiotis Kavouras

Thin Solid Films, 2013

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Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature

Chennupati Jagadish

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2002

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Structural defects in bulk GaN

Roberto Reis

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Deformation behavior of ion-beam-modified GaN

Michael Swain

Applied Physics Letters, 2001

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Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation

Sha Yan

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2010

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Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN

Antti Kuronen

Journal of Applied Physics, 2012

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Mechanism of nanoblister formation in Ga+ self-ion implanted GaN nanowires

Shun Muto

Applied Physics Letters, 2005

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Effects of hydrogen implantation into GaN

Michael Stavola

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999

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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Michael Reshchikov

Applied Physics Letters, 2000

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RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN

Karolina Pagowska

Acta Physica Polonica A, 2011

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Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Werner Egger

physica status solidi (b), 2019

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Direct evidence of N aggregation and diffusion in Au[sup +] irradiated GaN

Rodney C Ewing

Applied Physics Letters, 2006

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Implantation damage formation in a-, c- and m-plane GaN

Norberto Catarino

Acta Materialia, 2017

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Electronic stopping dependence of ion beam induced modifications in GaN

Anand Pathak

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2011

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Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations

Flyura Djurabekova

Journal of Physics D: Applied Physics, 2017

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Nanoindentation-Induced Pop-In Effects in GaN Thin Films

Jenh-YIh Juang

IEEE Transactions on Nanotechnology, 2000

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Near-interface charged dislocations in AlGaN/GaN bilayer heterostructures

Ernian Pan

Applied Physics Letters

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Defect formation in GaN epitaxial layers due to swift heavy ion irradiation

Vikram Kumar

Radiation Effects and Defects in Solids, 2011

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Microstructural and compositional analyses of gan-based nanostructures

Christian Kuebel

Physica Status Solidi (B) Basic Research, 2011

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Pinch off of nanopipes under electron irradiation in GaN

Jean Grilhé

Applied Physics Letters, 2005

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HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers

M. Krishna, Chennupati Jagadish

2007

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Mechanism of nanoblister formation in Ga[sup +] self-ion implanted GaN nanowires

S. Dhara

Applied Physics Letters, 2005

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