Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots? (original) (raw)

Defects in nanostructures with ripened InAs/GaAs quantum dots

Roberto Mosca

Journal of Materials Science: Materials in Electronics, 2008

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Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

V. Chaldyshev

Semiconductors, 2009

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Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy

Yanbo Wang

Scripta Materialia, 2013

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Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots

Zongwen Liu

Nanoscale Research Letters, 2014

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Atomic structure of an unusual linear defect at the (001)InAs/(001)GaAs epitaxial interface

Roland Bonnet

Surface and Interface Analysis, 2000

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Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range

N. Ledentsov

MRS Proceedings

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Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 µm Range

N. Cherkashin

2001

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Influence of the Growth Mode on the Microstructure of Highly Mismatched InAs/GaAs Heterostructures

Achim Trampert

Physica Status Solidi (a), 1994

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Interfacial Stability and Misfit Dislocation Formation in InAs/Gaas(110) Heteroepitaxy

Henry Weinberg

MRS Proceedings, 1997

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Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface

Patrick Chin

Applied Physics Letters, 1998

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Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures

Tadeusz Figielski

Microchimica Acta, 2004

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Reorientation of Misfit Dislocations During Annealing in InGaAs/GaAs(001) Interfaces

Z. Liliental-weber

MRS Proceedings, 1993

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Nanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled InAs/GaAs Quantum Dots

Jorge Mario Garcia

Physical Review Letters, 2000

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Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix

Nikolay Bert

Semiconductors, 2014

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Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Shira Yochelis

Applied Physics Letters, 2011

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Study of the spontaneous alignment of InAs quantum dots along the surface steps as a function of the InAs coverage

Pedro Pablo González Borrero

Thin Solid Films, 2002

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Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Philomela Komninou

Applied Surface Science, 2014

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Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

divine kumah

Applied Physics Letters, 2011

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A finite element study of the stress and strain fields of InAs quantum dots embedded in GaAs

Quek Jerry, Gui-Rong Liu

Semiconductor Science and Technology, 2002

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Size Effects and Scaling in Misfit Dislocation Formation in Self-Assembled Quantum Dots

Erik Van der Giessen

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Intermixing and shape changes during the formation of InAs self-assembled quantum dots

Jorge garcia

Applied Physics Letters, 1997

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Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands

Simon Huang

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Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): Theory and experiment

Armando Rastelli

Physical Review B, 2006

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Critical thickness for misfit dislocation formation in InAs/GaAs (110) heteroepitaxy

Luis Bonilla

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In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system

Brian Tanner

Applied Surface Science, 1998

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The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy

Rafal Dunin-Borkowski

2004

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Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures

Luca Seravalli

Journal of Applied Physics, 2007

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Instability of electrical characteristics of GaAs/InAs quantum dot structures

Roberto Mosca

physica status solidi (c), 2005

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NUCLEATION MECHANISM OF STRAIN-INDUCED INASSBP QUANTUM DOTS AND PITS AT LIQUID PHASE EPITAXY ON InAs (100) SUBSTRATE

Arpine Simonyan

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Incoherent interface of InAs grown directly on GaP(001)

Patrick Chin

Applied Physics Letters, 1996

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