Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy (original) (raw)

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A Review on the Different Techniques of GaN Heteroepitaxial Growth: Current Scenario and Future Outlook

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Growth of GaN on ZnO for solid state lighting applications - art. no. 63370Z

Adriana Valencia

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Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

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Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy

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Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999

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Epitaxial GaN Layers: Low Temperature Growth Using Laser Molecular Beam Epitaxy Technique and Characterizations

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James Speck

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Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE

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Structure and ordering of GaN quantum dot multilayers

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Optimization of nucleation and buffer layer growth for improved GaN quality

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