Thermally stable low resistivity ohmic contacts for high power and high temperature SiC device applications (original) (raw)

Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C

Laurent Gremillard

Microelectronics Reliability, 2020

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Direct Deposition of Low Resistance Thermally Stable Ohmic Contacts to n-SiC

JD Demaree

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Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions

Marek Guziewicz, Marek Wzorek

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Improved Al/Si ohmic contacts to p-type 4H-SiC

Konstantinos Zekentes, Ivan Kassamakov

Materials Science and Engineering: B, 2001

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Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications

Derek Demaree

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Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

Minh Duy

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Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

K. Vassilevski

Materials Science and Engineering: B, 2001

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Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment

narcis mestres

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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2Phase

Olivier Dezellus

IEEE Transactions on Electron Devices, 2016

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Nickel based ohmic contacts on SiC

O. Noblanc, C. Brylinski, György Radnóczi

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Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions

N. Nordell

Materials Science and Engineering: B, 1999

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The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC

D. Planson

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Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC

Luciano Scaltrito

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High temperature ohmic contacts to 3C–silicon carbide films

P. Pirouz

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Reliability tests of Au-metallized Ni-based ohmic contacts to 4H-n-SiC with and without nanocomposite diffusion barriers

Marek Wzorek, Marek Guziewicz

2010

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On the formation of Ni-based ohmic contacts to n-type 4H-SiC

R. Jakiela

2009

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Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

Tamara Isaacs-Smith

Journal of Electronic Materials, 1998

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Ta–Si contacts to n-SiC for high temperatures devices

Anna Stonert

Materials Science and Engineering B-advanced Functional Solid-state Materials, 2006

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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC

Gian Cardinali

MRS Proceedings, 2002

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The formation mechanism of Ni-based ohmic contacts to 4H-n-SiC

Marek Wzorek, Marek Guziewicz

2012

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Electrical and Morphological Study of a 70/30 Al-Ti Ohmic Contact to SiC

Tamara Isaacs-Smith

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Characterization of ohmic and Schottky contacts on SiC

O. Noblanc

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Ni–Al ohmic contact to p-type 4H-SiC

Jean-marie Bluet

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Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

TIANYU ZHOU

AIP Advances, 2014

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Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devices

Anna Stonert

2009

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Ohmic contact formation on n-type 6H-SiC using polysilicon and silicides

Santosh Kurinec

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497), 2001

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Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

Peter Lytvyn

Semiconductor Physics, Quantum Electronics and Optoelectronics

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High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC

Michael Bozack, T. Oder

Journal of Electronic Materials, 1998

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The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC

Igumbor Emmanuel

Applied Physics A, 2018

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Ohmic contact properties of magnetron sputtered Ti[sub 3]SiC[sub 2] on n- and p-type 4H-silicon carbide

Anita Lloyd Spetz

Applied Physics Letters, 2011

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