Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition (original) (raw)

Ion Beam Deposition of Materials At 40–200 Ev: Effect of Ion Energy And Substrate Temperature On Interface, Thin Film And Damage Formation

Nicole Herbots

MRS Proceedings, 1985

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Ion beam deposition in materials research, NIMB Vol. 37-38, 16-21 (1989) RA Zhur, SJ Pennycook, TS Noggle, N Herbots, TE Haynes, BR Appleton

Nicole Herbots

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1989

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Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam deposition

Nicole Herbots

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987

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Ion-solid interactions during ion beam deposition of 74Ge and 30Si on Si at very low ion energies (0-200 eV range)

Nicole Herbots

Nuclear Instruments and …, 1986

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Ion beam deposition and in-situ ion beam analysis

Kevin Orrman-Rossiter

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1992

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Ion implantation damage and crystalline-amorphous transition in Ge

giovanna impellizzeri

Applied Physics A, 2011

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Low‐temperature epitaxy of Si and Ge by direct ion beam deposition

Nicole Herbots

Journal of Vacuum …, 1987

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DIRECT FORMATION OF THIN FILMS AND EPITAXIAL OVERLAYERS AT LOW TEMPERATURES USING A LOW-ENERGY (10-500 eV) ION BEAM …

Nicole Herbots

… Symposium Held April 21-23, 1987 …, 1987

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Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge

Danielle Vanhaeren

Journal of vacuum science & technology, 2006

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Germanium and silicon ion beam deposition

Nicole Herbots

Thin Solid Films, 1982

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Ion implantation induced damage in relaxed Si/sub 1-x/Ge/sub x/

Cormac O'Raifeartaigh

Proceedings of 11th International Conference on Ion Implantation Technology

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Ion beams in silicon processing and characterization

John Borland

Journal of Applied Physics, 1997

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MeV ion implantation induced damage in relaxed Si< equation>< sub> 1-x< font face='verdana'> Ge< sub> x

Cormac O'Raifeartaigh

1997

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Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

Kin Yu

MRS Proceedings, 1991

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Ion beam mixing and oxidation of a Si/Ge-multilayer under oxygen bombardment

Josep Alay

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994

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Damage formation in Ge during Ar+ and He+ implantation at 15K

F. Auret, Werner Wesch, Jackie Nel

Physica B: Condensed Matter, 2009

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Room Temperature Nitridation and Oxidation of Si, Ge and Mbegrown Sige Using Low Energy Ion Beams (0.1-1 Kev)

Nicole Herbots

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Energetic Ion Beams in Semiconductor Processing: Summary of a Doe Panel Study

Michael Current

MRS Proceedings, 1995

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2 MeV Si ion implantation damage in relaxed Si1−xGex

Cormac O'Raifeartaigh

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1996

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Implantation and sputtering of Ge ions into SiO 2 substrates with the use of Ge ions produced by repetitive laser pulses

Selcuk Yerci

Materials Science in Semiconductor Processing, 2006

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Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Chris Jeynes

Physical Review B, 2008

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Semiconductor-based heterostructure formation using low energy ion beams: Ion beam deposition (IBD) & combined ion and molecular beam deposition (CIMD

Olivier Vancauwenberghe

1988

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Semiconductor-Based Heterostructure Formation Using Low Energy Ion Beams: Ion Beam Deposition (IBD) Combined Ion & Molecular Beam Deposition (CIMD)

O. Hellman, Nicole Herbots

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Electrical characterization of defects in heavy-ion implanted n-type Ge

Jackie Nel

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007

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Electrical characterization of defects in heavy ion implanted

Sergio M M Coelho

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Amorphization of silicon by high dose germanium ion implantation with no external cooling mechanism

Pekka Kuivalainen

Applied Surface Science, 1994

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Film deposition and buried layer formation by mass-analyzed ion beams

Hiroshi Inokawa

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

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Microstructural evolution during ion beam assisted Deposition

graham hubler

MRS Proceedings, 1994

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Ion-Implantation of Silicon in Gallium-Arsenide - Damage and Annealing Characterizations

R. Nipoti

Nuclear Instruments & Methods in Physics Research, 1983

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