GaInNAs quantum well structures for 1.55μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy (original) (raw)
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Japanese Journal of Applied Physics, 2004
A quality improvement of the III-V dilute nitride semiconductor alloy, GaInNAs, grown by metalorganic chemical vapor deposition (MOCVD) on a GaAs substrate is reported for 1.3 mm-wavelength lasers. GaInNAs wafers were grown at various growth temperatures, V/III ratios, and growth rates. The photoluminescence (PL) efficiency of GaInNAs/GaAs quantum wells (QWs) was increased by lowering the growth temperature and increasing the V/III ratio in the growth conditions conventionally used for nitrogen (N)-free GaInAs/GaAs QW growth. These conditions are important for realizing high PL efficiency because they prevent the inhomogeneity of the immiscible alloy of GaInNAs. It was also observed that the optimal window for the growth temperature, V/III ratio, and growth rate for the GaInNAs is narrower than that of N-free GaInAs QWs. After careful optimization of the growth conditions, GaInNAs/GaAs QW lasers with various emission wavelengths were fabricated. Low-threshold current densities of 0.17 kA/cm 2 /well, 0.18 kA/cm 2 /well, and 0.44 kA/cm 2 /well are obtained for emission wavelengths of 1.25 mm, 1.30 mm, and 1.34 mm, respectively. The results obtained for growth conditions and lasing characteristics are useful in further improving 1.3 mm or longer wavelength GaInNAs lasers grown by MOCVD.
International Journal of High Speed Electronics and Systems, 2007
Optical properties of green emission Gao.80In020N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (-520 nm). The activation energy of the non-radiative recombination centers was found to be -60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.
Journal of Crystal Growth, 2004
CdS x Se 1−x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer. Temperature dependent photoluminescence of CdS x Se 1−x quantum dots was carried out in a range of 10-300 K. The integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 K. The band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 K. The component ratio of S to Se in the CdS x Se 1−x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard Law. Moreover, the parameters of the Varshni relation for CdS 0.9 Se 0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve: α = (3.5 ± 0.1)10 −4 eV/K, and β = 210 ± 10 K (close to the Debye temperature θ D of the material). CdS x Se 1−x , quantum dots, temperature dependent photoluminescence
Japanese Journal of Applied Physics, 2002
Tertiarybutylhydrazine was used as a novel nitrogen source for metalorganic vapor phase epitaxy of GaN at low temperatures. Hexagonal epilayers with optically smooth and specular surfaces were grown with trimethylgallium on basal plane sapphire as well as GaAs(111) B substrates. On (001)-oriented GaAs, predominantly cubic GaN was grown. Incorporation of carbon impurities was distinctly lower than in layers grown with dimethylhydrazine. The epilayer quality is presently limited by the purity of the available tertiarybutylhydrazine.
Optical properties of GaInNAs/GaAs quantum wells
Solid-State Electronics, 2003
We report the results of our studies of optical and electro-optic properties of GaInNAs/GaAs single quantum wells grown by chemical beam epitaxy. The quantum wells have been characterised by scanning transmission electron microscopy and energy dispersive X-ray analysis. Photoluminescence measurements from sequentially grown GaInAs and GaInNAs quantum wells were carried out between 4 K and room temperature. A significant difference in the temperature dependence of GaInNAs band gap compared to nitrogen-free GaInAs is observed. Photoluminescence results are used to determine the interband transition energies. The results are compared with the theoretical values obtained using the band-anticrossing model. When the device is illuminated with monochromatic light, a finite photovoltage develops in the plane of the quantum wells due to Fermi level fluctuations.
Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Journal of Crystal Growth, 2001
The variation of elemental composition in as-grown GaInNAs/GaAs quantum well structures has been investigated by energy dispersive X-ray analysis of cross-sections using a high resolution scanning transmission electron microscope. The formation of quaternary GaInNAs dot structures is indicated by low temperature photoluminescence measurements and by the correlation of indium and nitrogen distributions. The distributions of arsenic and nitrogen across the well structure suggest the presence of a continuous nitride-like layer formed at the surface of the GaAs buffer layer before the GaInNAs dots. The influence of this nitride-like interlayer on the mechanism of GaInNAs dot formation is discussed.
Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs
Journal of Crystal Growth, 2003
Self-assembled GaInAs quantum dots (QDs) embedded in GaIn(N)As were grown by atmospheric pressure metalorganic vapor phase epitaxy. The dependence of the photoluminescence (PL) properties on the material composition of the barrier layer was investigated. The emission wavelength and intensity of the QDs could be tuned by controlling the indium and nitrogen compositions in the barrier layer. By using a Ga 0.8 In 0.2 As barrier layer, the roomtemperature PL wavelength of the QDs was extended up to 1.42 mm and the PL intensity was increased by a factor of three compared to the conventional GaInAs/GaAs QD structure. Preliminary results show that by using N-containing Ga 0.85 In 0.15 NAs as a barrier layer instead of Ga 0.85 In 0.15 As an increase in the PL wavelength and intensity in the 1.3 mm wavelength range can be obtained. r