Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs (original) (raw)
Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 μm
Harri Lipsanen
Applied Physics Letters, 2001
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GaInNAs quantum well structures for 1.55μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy
Harri Lipsanen
Journal of Crystal Growth, 2002
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InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm
Sven Hofling
Nanotechnology, 2009
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Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm
Benoit Deveaud
Applied Physics Letters, 2002
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Photoluminescence Intensity Enhancement in Self-assembled InAs Quantum Dots Grown on (3 1 1)B and (1 0 0) GaAs
Almontaser Khatab
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Structural and optical properties of GaInNAs/GaAs quantum structures
M. Sopanen, Harri Lipsanen
Journal of Physics: Condensed Matter, 2004
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Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide
Dan Birkedal
IEEE Journal of Quantum Electronics, 2001
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Photoluminescence Intensity Enhancement in Self-assembled InAs Quantum Dots Grown on (311)B and (100) GaAs Substrates and Coated With Gold Nanoparticles.
Mohamed Abdellah Lemine
PhysicaE54(2013)233–236
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Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy
Satrio Wicaksono
Journal of Crystal Growth, 2004
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Comparative Study of 1.3 and 1.5 m Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots
Oumar Niasse
Research Journal of Applied Sciences, Engineering and Technology, 2013
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Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3 µm Range Lasers
Fumio Koyama
Japanese Journal of Applied Physics, 2004
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Photoluminescence study of strain-induced GaInNAs/GaAs quantum dots
Harri Lipsanen
Journal of Materials Science-Materials in Electronics, 2003
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Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy
Sasikala Ganapathy
Journal of Applied Physics, 2002
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Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy
ks kim
Applied Physics Letters, 2005
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Photoluminescence of GaAsBi/GaAs quantum dots grown by metalorganic vapor phase epitaxy
Khoubeib Ch
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Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single‐source precursor
Aloysius F . Hepp
Applied Physics Letters, 1993
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Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells
Jan Misiewicz
Journal of Applied Physics, 2007
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Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission
Joel Huerta
Acta Physica Polonica A, 2017
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A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer
Nilanjan Halder
Opto-Electronics Review, 2010
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Optical studies of GaInP/GaP quantum dots
F. Scholz, M. Jetter
Journal of Luminescence, 2003
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Emission-wavelength tuning of InAs quantum dots grown on nitrogen-δ-doped GaAs(001)
Toshiyuki KAIZU
Journal of Applied Physics, 2016
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1.52 μm photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers
BAOLAI LIANG
Applied Physics Letters, 2010
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Optical characterization of individual GaAs quantum dots grown with height control technique
A. Vinattieri
Journal of Applied Physics, 2013
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Effects of thin GaAs insertion layer on InAs∕(InGaAs)∕InP(001) quantum dots grown by metalorganic chemical vapor deposition
Jean-pierre Leburton
Applied Physics Letters, 2005
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1.52 μm photoluminescence from InAs quantum dots grown on patterned GaAs buffer
BAOLAI LIANG
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2008
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Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy
JinSoo Kim
Journal of Crystal Growth, 2004
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MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3 μm in single and stacked layers
Philippe Gilet
Journal of Crystal Growth, 2005
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Stacked structures In0.5Ga0.5As/GaAs quantum dots: Growth and characterization
Didik Aryanto, Khamim Ismail
2010 2nd International Conference on Electronic Computer Technology, 2010
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InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
Dieter Bimberg
Japanese Journal of Applied Physics, 1997
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Aluminium incorporation for growth optimization of 1.3μm emission InAs/GaAs quantum dots by molecular beam epitaxy
m sadeghi
Journal of Crystal Growth, 2003
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A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructures
Aditya Patel
Superlattices and Microstructures, 2013
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Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption
Daniel Ochoa
Journal of Crystal Growth, 2003
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Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures
Tomislav Šimeček
Journal of Crystal Growth, 2008
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