Low loss, high contrast planar optical waveguides based on low-cost CMOS compatible LPCVD processing (original) (raw)
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Low loss, high contrast planar optical waveguides based on low-cost CMOS compatible LPCVD processing
2008
A new class of integrated optical waveguide structures ("TriPleX") is presented, based on low cost CMOS-compatible LPCVD processing of alternating Si3N4 and SiO2 layers. The technology allows for medium and high index-contrast waveguides that exhibit low channel attenuation. In addition, TriPleX waveguides are suitable for operation at wavelengths from visible (< 500 nm) through the infra-red range (2 μm and beyond). The geometry is basically formed by a rectangular cross-section of silicon nitride (Si3N4) filled with and encapsulated by silicon dioxide (SiO2). The birefringence and minimal bend radius of the waveguide are completely controlled by the geometry of the waveguide layer structures. Experiments on typical geometries show excellent characteristics for telecom wavelengths at ~1300 nm-1600 nm (channel attenuation <= 0.06 dB/cm, Insertion Loss (IL) <= 0.15 dB, Polarization Dependent Loss (PDL) <= 0.1 dB, Group Birefringence (Bg) << 1×10-4, bend radius <= 50-100 μm).
Low loss, high contrast optical waveguides based on CMOS compatible LPCVD processing
Applied Physics Letters, 2007
A new class of integrated optical waveguide structures is presented, based on low cost CMOS compatible LPCVD processing. This technology allows for medium and high index contrast waveguides with very low channel attenuation. The geometry is basically formed by a rectangular cross-section silicon nitride (Si 3 N 4 ) filled with and encapsulated by silicon dioxide (SiO 2 ). The birefringence and minimal bend radius of the waveguide is completely controlled by the geometry of the waveguide layer structures. Experiments on typical geometries will be presented, showing excellent characteristics (channel attenuation ≤ 0.1 dB/cm, IL ≤ 1.5 dB, PDL ≤ 0.2 dB, B g ≤ 1×10 -4 , bend radius « 1 mm).
2005
A new class of integrated optical waveguide structures is presented, based on low cost CMOS compatible LPCVD processing. This technology allows for medium and high index contrast waveguides with very low channel attenuation. The geometry is basically formed by a rectangular cross-section silicon nitride (Si 3 N 4 ) filled with and encapsulated by silicon dioxide (SiO 2 ). The birefringence and minimal bend radius of the waveguide is completely controlled by the geometry of the waveguide layer structures. Experiments on typical geometries will be presented, showing excellent characteristics (channel attenuation ≤ 0.1 dB/cm, IL ≤ 1.5 dB, PDL ≤ 0.2 dB, B g ≤ 1×10 -4 , bend radius « 1 mm).
Low-Loss Si3N4 TriPleX Optical Waveguides: Technology and Applications Overview
IEEE Journal of Selected Topics in Quantum Electronics, 2018
An overview of the most recent developments and improvements to the low-loss TriPleX Si 3 N 4 waveguide technology is presented in this paper. The TriPleX platform provides a suite of waveguide geometries (box, double stripe, symmetric single stripe, and asymmetric double stripe) that can be combined to design complex functional circuits, but more important are manufactured in a single monolithic process flow to create a compact photonic integrated circuit. All functionalities of the integrated circuit are constructed using standard basic building blocks, namely straight and bent waveguides, splitters/combiners and couplers, spot size converters, and phase tuning elements. The basic functionalities that have been realized are: ring resonators and Mach-Zehnder interferometer filters, tunable delay elements, and waveguide switches. Combination of these basic functionalities evolves into more complex functions such as higher order filters, beamforming networks,
Large-scale integrated optics using TriPleX waveguide technology: from UV to IR
Applied Physics B-lasers and Optics, 2009
We present a new class of low-loss integrated optical waveguide structures as CMOS-compatible industrial standard for photonic integration on silicon or glass. A TriPleXTM waveguide is basically formed by a -preferably rectangular- silicon nitride (Si3N4) shell filled with and encapsulated by silicon dioxide (SiO2). The constituent materials are low-cost stoichiometric LPVCD end products which are very stable in time. Modal characteristics, birefringence, footprint size and insertion loss are controlled by design of the geometry. Several examples of new applications will be presented to demonstrate its high potential for large-scale integrated optical circuits for telecommunications, sensing and visible light applications.
Large-scale integrated optics using TriPleX waveguide technology: from UV to IR
Photonics Packaging, Integration, and Interconnects IX, 2009
We present a new class of low-loss integrated optical waveguide structures as CMOS-compatible industrial standard for photonic integration on silicon or glass. A TriPleX TM waveguide is basically formed by a -preferably rectangular-silicon nitride (Si 3 N 4 ) shell filled with and encapsulated by silicon dioxide (SiO 2 ). The constituent materials are low-cost stoichiometric LPVCD end products which are very stable in time. Modal characteristics, birefringence, footprint size and insertion loss are controlled by design of the geometry. Several examples of new applications will be presented to demonstrate its high potential for large-scale integrated optical circuits for telecommunications, sensing and visible light applications.
Design, fabrication, structural and optical characterization of thin Si3N4 waveguides
2004
LPCVD (low pressure chemical vapor deposition) thin film Si 3 N 4 waveguides have been fabricated on Si substrate within a CMOS (complementary metal-oxidesemiconductor) fabrication pilot-line. Rib, channel, and striploaded waveguides have been designed, fabricated and characterized in order to workout the best structure. Number and optical confinement factors of guided optical modes have been simulated taking into account sidewall effects caused by the etching processes, which have been studied by Scanning Electron Microscopy. Optical guided modes have been observed with a mode analyzer and compared with simulation expectation to confirm the process parameters. Propagation loss measurements at 780 nm have been performed by using both the cut-back technique and measuring the drop of intensity of the top scattered light along the length of the waveguide. Loss coefficients of about 0.1 dB/cm have been obtained for channel waveguides. These data are very promising in view of the development of Si integrated photonics.
Design and fabrication of SiO/sub 2//Si/sub 3/N/sub 4/ CVD optical waveguides
1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, 1999
In this paper the design and fabrication of siliconbased optical waveguides are revisited. The goal was to develop a novel deposition process to minimize leakage losses, by allowing the deposition of a thick Si02 lower cladding as an optical buffer layer. Indeed, comparison between theory and expqrimental data suggests that for the fabricated waveguides the dominant loss mechanism is scattering caused by side-walls surface roughness. Optical characterization yielded losses in the saqe range of state-of-art devices reported in the literature.
Fabrication techniques for low-loss silicon nitride waveguides
Micromachining Technology for Micro-Optics and Nano-Optics III, 2005
Optical waveguide propagation loss due to sidewall roughness, material impurity and inhomogeneity has been the focus of many studies in fabricating planar lightwave circuits (PLC's) 1,2,3 In this work, experiments were carried out to identify the best fabrication process for reducing propagation loss in single mode waveguides comprised of silicon nitride core and silicon dioxide cladding material. Sidewall roughness measurements were taken during the fabrication of waveguide devices for various processing conditions. Several fabrication techniques were explored to reduce the sidewall roughness and absorption in the waveguides. Improvements in waveguide quality were established by direct measurement of waveguide propagation loss. The lowest linear waveguide loss measured in these buried channel waveguides was 0.1 dB/cm at a wavelength of 1550 nm. This low propagation loss along with the large refractive index contrast between silicon nitride and silicon dioxide enables high density integration of photonic devices and small PLC's for a variety of applications in photonic sensing and communications.