Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(100) surfaces (original) (raw)

Etching of GaAs(100) with Aqueous Ammonia Solution: A Synchrotron-Photoemission Spectroscopy Study

Thomas Mayer

The Journal of Physical Chemistry C, 2010

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Wet Etching of GaAs(100) in Acidic and Basic Solutions: A Synchrotron−Photoemission Spectroscopy Study

Thomas Mayer

The Journal of Physical Chemistry C, 2008

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Characterization of wet-etched GaAs (100) surfaces

Ron Naaman

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Reconstruction dependence of the etching and passivation of the GaAs(001) surface

Sergey Eremeev

JETP Letters, 2010

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XPS analysis of surface chemistry of near surface region of epiready GaAs(100) surface treated with (NH4)2Sx solution

Sebastian Arabasz

Applied Surface Science, 2006

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Chemical etching of (100) GaAs in a sulphuric acid-hydrogen peroxide-water system

Irena Zubel

Journal of Materials Science, 1987

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XPS study of surface chemistry of epiready GaAs(100) surface after (NH4)2Sx passivation

J. Szuber

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Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S-treated GaAs (100) surfaces

James Samson

Applied Physics Letters, 1989

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High-Resolution X-ray Photoelectron Spectroscopy of Chlorine-Terminated GaAs(111)A Surfaces

David Michalak

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Isabelle GĂ©rard

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Surface stoichiometric changes of n-GaAs after anodic treatment: An XPS study

Werner Richtering

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Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solution

V. Alperovich

Applied Surface Science, 2004

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Investigation of neutralized (NH[sub 4])[sub 2]S solution passivation of GaAs (100) surfaces

Xin Chen

Applied Physics Letters, 1997

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A surface analytical study of GaAs(100) cleaning procedures

John Currie

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989

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Synchrotron-Induced Photoemission of Emersed GaAs Electrodes after Electrochemical Etching in Br 2 /H 2 O Solutions

Thomas Mayer

The Journal of Physical Chemistry B, 2000

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High resolution photoemission yield study of the GaAs(100) surface cleaned by atomic hydrogen

J. Szuber

2005

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Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface

Kyaw Ko

Applied Physics Letters, 1995

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GaAs clean up studied with synchrotron radiation photoemission

Christoph Adelmann

IOP Conference Series: Materials Science and Engineering, 2012

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Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum

Christoph Adelmann

Applied Physics Letters, 2011

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Capping and decapping of MBE grown GaAs(001), Al0.5Ga0.5As(001), and AlAs(001) investigated with ASP, PES, LEED, and RHEED

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Applied Surface Science, 1992

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The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

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Synchrotron-induced photoemission of GaAs electrodes after electrochemical treatment in aqueous electrolytes

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SXPS study of model GaAs(100)/electrolyte interface

Thomas Mayer

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Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM

Yesim Darici, Xuewen Wang

Surface Science, 1998

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Wet etching of GaAs using synchrotron radiation x rays

Derrick C Mancini, N. Moldovan

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Detection of As 2O 3 arsenic oxide on GaAs surface by Raman scattering

Lucia Quagliano

Applied Surface Science, 2000

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Angle-resolved XPS structural investigation of GaAs surfaces

Ungureanu Florina

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