Molecular beam epitaxy growth of SiC on Si (111) from silacyclobutane (original) (raw)
Related papers
1995
3C-on 6H-SiC (0001) epitaxial growth from the single-source organosilane precursor SilacyIobutane (c-C3H6SiH2) has been investigated over the temperature range of 800-1100 "C. Spectrophotometry was used to determine an optical absorption edge of-2.27 eV for the films grown at 900 "C, corresponding approximately to the energy band gap of 3C-Sic. The crystallinity, structure, strain, and dislocation density in the 3C-Sic thin films were determined using double crystal x-ray diffractometry (DCXRD). The films grown at 800-1000 "C were found to be exclusively SC-Sic. The films grown at 1100 "C were a mixture of 3C, 4H, and 6H polytypes of Sic. All films shown an excellent surface morphology. The optimum films are obtained at 900 "C, exhibiting structural properties nearly equal to those of the substrate: narrow DCXRD peak width (-17 arcsec) and low dislocation density (-3X lo6 cm2). 0 199.5 American Institute of Physics.
Applied Physics Letters, 1993
Low-pressure chemical vapor deposition of SiC on carbonized Si from the single-source organosilane precursor silacyclobutane (c-C3H6SiH2,SCB) has been investigated from 800 to 1200 °C. On atmospheric pressure-carbonized (100)Si, SiC films grown at 900 °C and above exhibit a transmission electron diffraction pattern consisting only of sharp spots with cubic symmetry. X-ray diffraction (XRD) of these films exhibit primarily the (200) and (400) SiC lines. XRD of films grown at 900 °C on Si(111) exhibits only an extremely large SiC(111) peak with a full width at half-maximum of 450 arcsec. Using a SCB flow rate of 1 sccm, a SiC growth rate of 4–5 μm/h was obtained on Si at 900 °C. Crystalline SiC films have also been grown by SCB at a temperature of 800 °C.
Thin Solid Films, 1997
The structure, strain and defect density of SiC thin films epitaxialty deposited on 6H-SiC (0001), Si (111) and Si (001) from the singlesource organosilane precursor silacyclobutane (c-C3H6SiH,_) were determined by X-ray double crystal diffractometry and topographic methods. All the films grown on Si were found to be 3C-SiC type. The films grown on 6H-SiC (0001) at 800 to 1000°C were found to be 3C-SiC type, whereas the films grown on 6H-SiC (0001) at 1100°C were a mixture of 3C, 4H and 6H polytypes of SiC. All the films grown on Si had very high defect densities. However, the defect density was reduced by a factor of 104 for the films of similar thickness on 6H-SiC (0001), with the film grown at 900°C being the optimum one exhibiting structural properties nearly equal to those of the substrate.
Journal of Electronic Materials, 1999
Epitaxial growth of SiC on hexagonal (or α)-SiC(0001) has been performed by means of solid-source molecular beam epitaxy (MBE). The solid-source MBE growth conditions have been analyzed concerning the supersaturation and the excess phase formation of silicon and carbon. In general, our results demonstrate that control of the Si/C ratio and the supersaturation (S) is essential for the growth mode and the kind of polytype grown. Low temperature (T<1450K) deposition on on-axis SiC substrates always results in the growth of 3C-SiC, which is significantly improved by an alternating supply of Si and C. On vicinal substrates, a step flow growth mode has been realized at T down to 1300K. In experiments performed at T>1450K under near surface equilibrium conditions, different growth modes, and conditions stabilizing the growth of certain polytypes have been found. With a step decrease of S, a step-flow growth mode of both 4Hand 6H-SiC was obtained and, for the first time in case of epitaxial SiC growth, a homogeneous nucleation of α-SiC at more C-rich conditions has been realized. Conditions stabilizing the growth of certain polytypes have been estimated by thermodynamic calculations considering the influence of polytype structure on the supersaturation and the surface energy. Based on these results, we have demonstrated the growth of a double-heterostructure by firstly growing a 3C-SiC layer on 4H-SiC(0001) at low temperature and a subsequent growth of 4H-SiC under near surface equilibrium conditions on a C-stabilized surface on top of this layer.
Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C
Thin Solid Films, 2011
To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C-SiC on 150 mm Si wafers was investigated at 1000°C using alternating supply epitaxy. The growth was performed in a hot-wall low-pressure chemical vapor deposition reactor, with silane and acetylene being employed as precursors. To avoid contamination of Si substrate, the reactor was filled in with oxygen to grow silicon dioxide, and then this thin oxide layer was etched away by silane, followed by a carbonization step performed at 750°C before the temperature was ramped up to 1000°C to start the growth of SiC. Microstructure analyses demonstrated that single-crystalline 3C-SiC is epitaxially grown on Si substrate and the film quality is improved as thickness increases. The growth rate varied from 0.44 to 0.76 ± 0.02 nm/cycle by adjusting the supply volume of SiH 4 and C 2 H 2 . The thickness nonuniformity across wafer was controlled with ± 1%. For a prime grade 150 mm virgin Si(100) wafer, the bow increased from 2.1 to 3.1 μm after 960 nm SiC film was deposited. The SiC films are naturally n type conductivity as characterized by the hot-probe technique.