Highly perfect thin films of SiC: X-ray double crystal diffractometry and X-raydouble crystal topographic study (original) (raw)

Reduced temperature growth of crystalline 3C‐SiC films on 6H‐SiC by chemical vapor deposition from silacyclobutane

Jharna Chaudhuri

1995

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Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane

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Molecular beam epitaxy growth of SiC on Si (111) from silacyclobutane

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1998

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3C-SiC Film Growth on Si Substrates

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2000

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3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor

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Structural characterization of heteroepitaxial 3C-SiC

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Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates

Stephen Saddow

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Effect of carbonization on the growth of 3C-SiC on Si (111) by silacyclobutane

Andrew Steckl

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A Study of Structural Defects in 3C-SiC HeteroEpitaxial Films

Ruggero Anzalone

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CVD growth and characterization of 3C-SiC thin films

Dipak Paramanik

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Crystal growth of 3C–SiC polytype on 6H–SiC(0001) substrate

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Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Homero Maciel

Physics and Technology of Silicon Carbide Devices, 2012

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Effect of filament and substrate temperatures on the structural and electrical properties of SiC thin films grown by the HWCVD technique

Arup Dasgupta

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Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

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study of structural defects in 3C-SiC hetero-epitaxial films

C. Bongiorno

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Mechanical Properties and Morphology of Polycrystalline 3C-SiC Films Deposited on Si and SiO2 by LPCVD

Christian Zorman

MRS Proceedings, 2003

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X-ray double crystal and X-ray topographic characterization of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminum nitride/sapphire substrates

J. Chaudhuri

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Structural characterization of nanometer SiC films grown on Si

Andrew Steckl

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SiC materials: a semiconductor family for the next century

Sylvie Contreras

Comptes Rendus de l'Académie des Sciences - Series IV - Physics, 2000

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Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition

Marco Negri

CrystEngComm, 2016

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3C-SiC Films on Si for MEMS Applications: Mechanical Properties, C. Locke, G. Kravchenko, P. Waters, J D. Reddy, K. Du, A.A. Volinsky, C.L. Frewin, S.E. Saddow, Materials Science Forum, Vols. 615 - 617, pp. 633-636, 2009

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Polytypism and surface structure of SiC

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Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of buffer layer and methyltrichlorosilane addition

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Polycrystalline SiC growth and characterization

Carlo Ricciardi

Applied Surface Science, 2004

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STRUCTURAL AND OPTICAL PROPERTIES OF POLYCRYSTALLINE 6H-SiC AND CRYSTALLINE SiC FILM GROWN ONTO SILICON SUBSTRATE BY PLD

A. Keffous

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X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H–SiC substrates

A. Fissel

Materials Science and Engineering: B, 1999

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Mechanical Properties of Single and Polycrystalline SiC Thin Films

Alex A Volinsky

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Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films

Alexander Lebedev

Physica B: Condensed Matter, 2009

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