Temperature dependence of long wavelength semiconductor lasers (original) (raw)
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On the temperature sensitivity of semiconductor lasers
Applied Physics Letters, 1992
The temperature dependence of below-threshold emission from multiple quantum well semiconductor lasers is well characterized by a power law, in excellent agreement with Landau-Ginzburg theory of second-order phase transitions. We thereby show that it is the temperature dependence of net gain and not that of nonradiative recombination which primarily determines temperature sensitivity of threshold in long-wavelength injection lasers.
A theoretical investigation of the characteristic temperature T0 for semiconductor lasers
IEEE Journal of Selected Topics in Quantum Electronics, 2003
The temperature dependence of the characteristic temperature T 0 of semiconductor quantum-well lasers is investigated using detailed simulations. The critical-temperature-dependent processes are the optical gain and the nonradiative recombination. The gain model is based on k p theory with the multiple quantum wells in the active layer represented by a superlattice. The Auger process is assumed to be thermally activated. It is shown that, with inclusion of the continuum state filling and interband mixing, the most important features experimentally observed in the temperature dependence of the T 0 value can be explained. The continuum state filling and band nonparabolicity cause a significant deviation from the ideal linear carrier density versus temperature relation for quantum wells. The results are compared to experiment for broad area devices lasing at 980 nm and 1.3, and 1.55 m, and show good agreement over a broad range of temperature.
Metrology and Measurement Systems, 2010
Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal therma...
Temperature performance of the edge emitting transistor laser
Applied Physics Letters, 2011
Room temperature mid-infrared surface-emitting photonic crystal laser on silicon Appl. Phys. Lett. 99, 221110 (2011) GaN-based photonic crystal surface emitting lasers with central defects Appl. Phys. Lett. 99, 221105 Non-linear absorption of 1.3-m wavelength femtosecond laser pulses focused inside semiconductors: Finite difference time domain-two temperature model combined computational study J. Appl. Phys. 110, 103106 Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion J. Appl. Phys. 110, 103104 (2011) In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers Appl. Phys. Lett. 99, 201109 (2011) Additional information on Appl. Phys. Lett.
Low Temperature Behaviour of Laser Diodes
Le Journal de Physique IV, 1996
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pirot type with a Buried Heterostxucture. A large improvement of threshold current is obtained as the temperature decreases. The exponential variation of Ith is verified and a TO value of 69K is deduced. The intrinsic resonant frequency is measured with noise analysis. This resonance varies as the square root of the net injected current. The slopes of these curves are found to increase dramatically with decreasing temperature. The 3 dB bandwidth experiments are also performed, leading in the same way, to a large increase of the slopes with cooling but package parasitics limit the maximum achievable bandwidth. The influence of the laser parasitics, such as the roll-off phenomenum, is also underlined.
Temperature dependence of the threshold current for InGaAlP visible laser diodes
… , IEEE Journal of, 1991
The temperature dependence of the threshold current for InGaAlP visible light laser diodes was investigated from the aspect of gain-current characteristics. The cavity length dependence of light output power versus current characteristic was evaluated for a 40 pm width InGaP-InGaAIP broad-stripe laser in the temperature range between-70 and 90"C, which had about a 670 nm oscillation wavelength at room temperature. The threshold-current density dependence on the cavity length shows that a linear-gain approximation is suitable for this system. A minimum threshold-current density of 860 A/cm2 was achieved at room temperature with a cavity length of 1160 pm, which is the lowest value ever reported for this material. The linear-gain parameters p and. To depended on the temperature with the characteristic temperature of about 200 K, which is considered to be the intrinsic characteristic temperature of the threshold current for this active-layer material. The internal quantum efficiency, derived from the cavity length dependence of the differential quantum efficiency, decreased in the temperature range higher than-1O"C, which affected the excess threshold-current increase and the decrease in the characteristic temperature at this temperature range. The theoretical calculation, considering a one-dimensional band structure model, showed that this excess increase of the threshold current was found to be attributed to the electron overflow current into the p-type cladding layer.
Optics Communications, 2010
In this paper, a novel interpretation of the effect of Auger recombination coefficient (C) on the turn-on time delay (ton) of semiconductor laser diodes (SLDs) is presented. To the date, the well-known conclusion is that the main effect of C is to decrease ton. This is because the earlier studies were based on less physical assumptions. Contrarily, we show that the general effect of C is to increase ton. This conclusion is supported by including the effect of temperature of operation (T) on ton of uncooled SLDs. Advanced analytical model is presented to determine ton analytically and in term of nonradiative (A), radiative (B) and C recombination coefficients. The derived model can be applied to bulk and multiple quantum-well (MQW) long-wavelength SLDs at any value of temperature of operation degree (T) within the range 25-85 °C. The temperature dependence of ton is calculated according to the temperature dependences of C and threshold carrier density (Nth). The temperature dependence of the latter is calculated according to the temperature dependence of laser cavity parameters and not by the well-known Parkovian relationship. Numerical and analytical results show that ton increases as T increases due to increasing of Nth and C which its effect dominates at high temperature degrees. In addition, we show that the effect of temperature dependence of ton in MQW SLD is smaller than the bulk one. Moreover, MQW SLD needs a lower injection current than the bulk one to achieve the same value of ton.
A thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs–AlGaAs system (λ st ≈ 0.8 µm), GaSb-based laser diodes (λ st ≈ 2 µm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ∆T(t), calculated from direct bias change, is analyzed using a thermal R T C T equivalent circuit (the Foster and Cauer models), where R T is the thermal resistance and C T is the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the perfo...
Effect of Growth Temperature on InP QD Lasers
IEEE Photonics Technology Letters, 2000
We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750 C to 690 C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the growth temperature window between 710 C and 730 C. Wider (16 nm compared to 8 nm) interlayer barriers lead to lower threshold current density with 300 K values as low as 165 Acm 2 for 2-mm-long lasers with uncoated facets.
Experimental Parametric Investigation Of Temperature Effects On 60W-Qcw Diode Laser
2011
Nowadays, quasi-continuous wave diode lasers are used in a widespread variety of applications. Temperature effects in these lasers can strongly influence their performance. In this paper, the effects of temperature have been experimentally investigated on different features of a 60W-QCW diode laser. The obtained results indicate that the conversion efficiency and operation voltage of diode laser decrease with the augmentation of the working temperature associated with a redshift in the laser peak wavelength. Experimental results show the emission peak wavelength of laser shifts 0.26 nm and the conversion efficiency decreases 1.76 % with the increase of temperature from 40 to 50 ̊C. Present study also shows the slope efficiency decreases gradually at low temperatures and rapidly at higher temperatures. Regarding the close dependence of the mentioned parameters to the operating temperature, it is of great importance to carefully control the working temperature of diode laser, particul...