On the temperature sensitivity of semiconductor lasers (original) (raw)

Temperature dependence of long wavelength semiconductor lasers

Applied Physics Letters, 1992

We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, /z = 1. 3 ,um. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines laser diode performance at elevated temperatures.

A theoretical investigation of the characteristic temperature T0 for semiconductor lasers

IEEE Journal of Selected Topics in Quantum Electronics, 2003

The temperature dependence of the characteristic temperature T 0 of semiconductor quantum-well lasers is investigated using detailed simulations. The critical-temperature-dependent processes are the optical gain and the nonradiative recombination. The gain model is based on k p theory with the multiple quantum wells in the active layer represented by a superlattice. The Auger process is assumed to be thermally activated. It is shown that, with inclusion of the continuum state filling and interband mixing, the most important features experimentally observed in the temperature dependence of the T 0 value can be explained. The continuum state filling and band nonparabolicity cause a significant deviation from the ideal linear carrier density versus temperature relation for quantum wells. The results are compared to experiment for broad area devices lasing at 980 nm and 1.3, and 1.55 m, and show good agreement over a broad range of temperature.

Effect of Growth Temperature on InP QD Lasers

IEEE Photonics Technology Letters, 2000

We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750 C to 690 C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the growth temperature window between 710 C and 730 C. Wider (16 nm compared to 8 nm) interlayer barriers lead to lower threshold current density with 300 K values as low as 165 Acm 2 for 2-mm-long lasers with uncoated facets.

Low Temperature Behaviour of Laser Diodes

Le Journal de Physique IV, 1996

Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pirot type with a Buried Heterostxucture. A large improvement of threshold current is obtained as the temperature decreases. The exponential variation of Ith is verified and a TO value of 69K is deduced. The intrinsic resonant frequency is measured with noise analysis. This resonance varies as the square root of the net injected current. The slopes of these curves are found to increase dramatically with decreasing temperature. The 3 dB bandwidth experiments are also performed, leading in the same way, to a large increase of the slopes with cooling but package parasitics limit the maximum achievable bandwidth. The influence of the laser parasitics, such as the roll-off phenomenum, is also underlined.

Temperature dependence of the threshold current for InGaAlP visible laser diodes

… , IEEE Journal of, 1991

The temperature dependence of the threshold current for InGaAlP visible light laser diodes was investigated from the aspect of gain-current characteristics. The cavity length dependence of light output power versus current characteristic was evaluated for a 40 pm width InGaP-InGaAIP broad-stripe laser in the temperature range between-70 and 90"C, which had about a 670 nm oscillation wavelength at room temperature. The threshold-current density dependence on the cavity length shows that a linear-gain approximation is suitable for this system. A minimum threshold-current density of 860 A/cm2 was achieved at room temperature with a cavity length of 1160 pm, which is the lowest value ever reported for this material. The linear-gain parameters p and. To depended on the temperature with the characteristic temperature of about 200 K, which is considered to be the intrinsic characteristic temperature of the threshold current for this active-layer material. The internal quantum efficiency, derived from the cavity length dependence of the differential quantum efficiency, decreased in the temperature range higher than-1O"C, which affected the excess threshold-current increase and the decrease in the characteristic temperature at this temperature range. The theoretical calculation, considering a one-dimensional band structure model, showed that this excess increase of the threshold current was found to be attributed to the electron overflow current into the p-type cladding layer.

Temperature performance of the edge emitting transistor laser

Applied Physics Letters, 2011

Room temperature mid-infrared surface-emitting photonic crystal laser on silicon Appl. Phys. Lett. 99, 221110 (2011) GaN-based photonic crystal surface emitting lasers with central defects Appl. Phys. Lett. 99, 221105 Non-linear absorption of 1.3-m wavelength femtosecond laser pulses focused inside semiconductors: Finite difference time domain-two temperature model combined computational study J. Appl. Phys. 110, 103106 Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion J. Appl. Phys. 110, 103104 (2011) In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers Appl. Phys. Lett. 99, 201109 (2011) Additional information on Appl. Phys. Lett.

Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping

IEEE Photonics Technology Letters, 2000

Temperature dependencies of the threshold current, device slope efficiency, and heterobarrier electron leakage current from the active region of InGaAsP-InP multiquantum-well (MQW) lasers with different profiles of acceptor doping were measured. We demonstrate that the temperature sensitivity of the device characteristics depends on the profile of p-doping, and that the variance in the temperature behavior of the threshold current and slope efficiency for lasers with different doping profiles cannot be explained by the change of the measured value of the leakage current with doping only. The entire experimental data can be qualitatively explained by suggesting that doping can affect the value of electrostatic band profile deformation that affects temperature sensitivity of the output device characteristics. We show that doping of the p-cladding/SCH layer interface in InGaAsP-InP MQW lasers leads to improvement of the device temperature performance.

Temperature-Dependent Threshold Current in InP Quantum-Dot Lasers

IEEE Journal of Selected Topics in Quantum Electronics, 2000

We explore the origins of the threshold current temperature dependence in InP quantum-dot (QD) lasers. While the internal optical mode loss does not change with temperature, the peak gain required to overcome the losses becomes more difficult to achieve at elevated temperature due to the thermal spreading of carriers among the available states. In 2-mm-long lasers with uncoated facets, this effect is responsible for 66% of the difference in threshold current density between 300 and 360 K. Spontaneous recombination current only makes up at most 10% of the total recombination current density over this temperature range, but the temperature dependence of the spontaneous recombination in the QD and quantum-well capping layers can be used, assuming only a simple proportional nonradiative recombination process, to explain the temperature dependence of the threshold current density.