Extremely thin silicon ΔE detectors for ion beam analysis (original) (raw)
On the use of thin ion implanted Si detectors in heavy ion experiments
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
We present test results on the use of thin ion implanted epitaxial Si detectors for registration of low-and medium-energy heavy fragments in nuclear reactions. A linear energy response for very low energy nuclei has been observed. A test of 10~Lm + 300~tm telescopes under realistic experimental conditions for heavy ion experiments exhibits the possibilities to use these detectors for the measurements of multifragmentation products .
Low-temperature technique of thin silicon ion implanted epitaxial detectors
The European Physical Journal A, 2015
A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a lowtemperature baking process instead of high-temperature annealing. This thermal treatment is performed after B + ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241 Am (E α = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm 2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84 Kr(E = 35 A MeV)+ 112 Sn. The ΔE −E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.
Thin silicon solid-state detectors for energetic particle measurements
Astronomy & Astrophysics, 2021
Context. Silicon solid-state detectors are commonly used for measuring the specific ionization, dE∕dx, in instruments designed for identifying energetic nuclei using the dE∕dx versus total energy technique in space and in the laboratory. The energy threshold and species resolution of the technique strongly depend on the thickness and thickness uniformity of these detectors. Aims. Research has been carried out to develop processes for fabricating detectors that are thinner than 15 μm, that have a thickness uniformity better than 0.2 μm over cm2 areas, and that are rugged enough to survive the acoustic and vibration environments of a spacecraft launch. Methods. Silicon-on-insulator wafers that have a device layer of the desired detector thickness supported by a thick handle layer were used as starting material. Standard processing techniques were used to fabricate detectors on the device layer, and the underlying handle-layer material was etched away leaving a thin, uniform detector s...
The response and calibration of thin Si ΔE detectors
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
The response of thin ($7 lm) self-supporting Si p-i-n DE detectors for light recoils (Z T 8) has been characterised using a conventional Elastic Recoil Detection (ERD) set-up. In this study, the energy loss of each recoil in the DE detector was measured by determining the incident energy from the time of¯ight and the energy after traversing the DE detector using a thick (280 lm) Si p-i-n diode E detector. 40 MeV 35 Cl 7 ions were used to produce recoils of H, Li, Be, B, C, N and O. Correlation of the energy loss in the DE detector with the amplitude of the DE signals was used to assign calibration constants. Analysis of the variance of the signals from the trend line revealed that the standard deviation of the data perpendicular to the trend line which is not contributed to by energy straggling and multiple scattering, increases with increasing recoil atomic number. Ó 0168-583X/99/$ -see front matter Ó 1999 Elsevier Science B.V. All rights reserved. PII: S 0 1 6 8 -5 8 3 X ( 9 9 ) 0 0 5 1 8 -2
Silicon Detectors for Low Energy Particle Detection
IEEE Transactions on Nuclear Science, 2008
Silicon detectors with very thin entrance contacts have been fabricated for use in the IMPACT SupraThermal Electron (STE) instrument on the STEREO mission and for the Solid State Telescopes on the THEMIS mission. The silicon diode detectors were fabricated using a 200 Å thick phosphorous doped polysilicon layer that formed the thin entrance window. A 200 Å thick aluminum layer was deposited on top of the polysilicon in order to reduce their response to stray light. Energy loss in the entrance contact was about 350 eV for electrons and about 2.3 keV for protons. The highest detector yield was obtained using a process in which the thick polysilicon gettering layer was removed by chemical etching rather than chemical mechanical polishing.
Journal of Instrumentation, 2014
This paper describes the fabrication of efficient ultra-thin silicon transmission detectors for use as pre-cell detectors in single-ion experiments on living cells at the Lund Ion Beam Analysis Facility. More than 40 detectors of different thicknesses down to 5 µm have been fabricated and packaged. The main design considerations were very low leakage current (below 9 nA) and low full depletion voltage at biases less than 0.5 V at room temperature. In addition, we have shown that cooling the device can reduce the leakage current to 3 nA. The experimental testing of the pre-cell detection system is based on counting the passage of ions through the transmission (∆E) detector before hitting the stopping (E) detector placed behind it, to ensure the accurate delivery of specific doses of radiation to the sample. Optimal detection of the fabricated detectors for the passage of an external beam of 2.2 MeV protons was obtained by cooling the device to below 2 • C. Cooling the ∆E detectors provides up to 20% better energy resolution and up to 98% detection efficiency for 2.2 MeV protons. The development of this kind of efficient pre-cell detector enables a range of new experiments to be conducted on thick biological samples.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007
Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24 GeV=c protons up to a fluence of 3 Â 10 15 p=cm 2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV =IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to very low fluences ð5 Â 10 13 p=cm 2 Þ in all measured series. This result was confirmed for one series of diodes in TCT measurements with an infrared laser. TCT measurements with a red laser showed no type inversion up to fluences of 3 Â 10 15 p=cm 2 for n-type devices whereas p-type diodes undergo type inversion from p-to n-type for fluences higher than % 2 Â 10 14 p=cm 2 .
Fundamental limits to detection of low-energy ions using silicon solid-state detectors
Applied Physics Letters, 2004
Recent advances in solid-state detector (SSD) technology have demonstrated the detection of ions and electrons down to 1 keV. However, ions at keV energies lose a substantial amount of energy ΔN in a SSD through Coulombic interactions with target nuclei rather than through interactions that contribute to the SSD output pulse, whose magnitude is a measure of the ion’s incident energy. Because ΔN depends on the ion species, detector material, and interaction physics, it represents a fundamental limitation of the output pulse magnitude of the detector. Using 100% quantum collection efficiency silicon photodiodes with a thin ~40–60 Å! SiO2 passivation layer, we accurately quantify ΔN for incident 1–120 keV ions and, therefore, evaluate the detection limits of keV ions using silicon detectors.
Effect of the Heavy Ions to the Silicon Detectors
2016
Silicon particle detectors are used in several applications such as accelerators in high energy physics, space, nuclear physics experiments and medicine. Thereby, it is crucially important to understand the effects of various particles with different energies on performance of silicon detectors. In this study, it has been focused on recoil heavy ions (Z ⩾ 3) produced by 50 to 500 MeV protons in silicon. In order to investigate the effects of the recoil heavy ions on silicon, it has been simulated some physical quantities such as variety, ranges, linear energy transfers (LET) and non-ionizing energy loss (NIEL) of the recoil heavy ions through GEANT4 (Geometry And Tracking) [1], FLUKA (FLUktuierende KAskade) [2] and SRIM [3] Monte Carlo tools.
Superior radiation tolerance of thin epitaxial silicon detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003
For the LHC upgrade (fluences up to 10 16 p=cm 2 ) epi-Si devices are shown to be a viable solution. No type inversion was measured up to 1:3 Â 10 15 24 GeV=c protons/cm 2 and the charge collection efficiency (CCE) remained close to 100%. For reactor neutrons CCE was measured to be 60% at 8 Â 10 15 n=cm 2 : Annealing measurements have shown that only moderate cooling during beam off periods would be necessary. As a tentative explanation for the superior quality of these devices, we assume that radiation-induced donor generation leads to compensation effects of deep acceptors. In the future, we will extend the experiments to fluences up to 10 16 p=cm 2 and use also different variants of the epi-Si material and device geometry. r