Characterization of thick epitaxial silicon detectors from different producers after proton irradiation (original) (raw)

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Characterization of thick epitaxial silicon detectors from different producers after proton irradiation

Profile image of Michael MollMichael Moll

2007, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment


Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Radiation hardness of silicon detectors manufactured on wafers from various sources

1997 •

Maurice Glaser

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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Results of irradiation tests on standard planar silicon detectors with 7– protons

2002 •

Maurice Glaser, Michael Moll

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Proton irradiation of silicon detectors with different resistivities

Maurice Glaser

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Filtration & Separation

Analysis of the radiation hardness and charge collection efficiency of thinned silicon diodes

2004 •

Andrea Candelori

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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Superior radiation tolerance of thin epitaxial silicon detectors

2003 •

Ioana Pintilie

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Nuclear Physics B - Proceedings Supplements

Electrical characteristics and charge collection efficiency of silicon detectors irradiated with very high neutron and proton fluences

1998 •

S. Sciortino

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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Leakage current of hadron irradiated silicon detectors – material dependence

1999 •

Michael Moll

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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Experimental results on radiation induced bulk damage effects in float-zone and epitaxial silicon detectors

1997 •

Maurice Glaser

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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C

1995 •

Maurice Glaser

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Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between -20$^0$C and +20$^0$C

1994 •

pierre jarron

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