Characterization of thick epitaxial silicon detectors from different producers after proton irradiation (original) (raw)

Radiation hardness of silicon detectors manufactured on wafers from various sources

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Results of irradiation tests on standard planar silicon detectors with 7– protons

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Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes

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Experimental results on radiation induced bulk damage effects in float-zone and epitaxial silicon detectors

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Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C

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Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between -20$^0$C and +20$^0$C

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1994

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Lithium ion irradiation effects on epitaxial silicon detectors

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Electrical properties and charge collection in silicon diodes after heavy irradiation

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Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy

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A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors

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Effective generation‐recombination parameters in high‐energy proton irradiated silicon diodes

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Silicon detectors irradiated “in situ” at cryogenic temperatures

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Study of charge transport in non-irradiated and irradiated silicon detectors

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Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

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