A CuO nanowire infrared photodetector (original) (raw)

Ultrahigh responsivity UV/IR photodetectors based on pure CuO nanowires

Ultrafast with high-performance CuO nanowires UV/IR photodetectors was fabricated using CuO nanowires photodetector with platinum (Pt) contact electrodes and its optoelectronic properties were examined. The CuO nanowires used in the experiment were synthesized by thermal oxidation method. The electrical performance and photoelectric response performance were studied, and the results showed that the UV/IR photodetector exhibited a high sensitivity to UV 390 nm, Blue 410 nm ultraviolet light and 850 nm, 940 nm infrared light. The response and recovery time were also fast.

Synthesis and Characterization of CuO Nanowires

2006

Synthesis of copper oxide nanowires was done heating up copper wires in wet ambient air at 400 and 500degC. The existence of nanowires was confirmed by SEM images and EDX spectroscopy. Nanowires were not formed in nitrogen ambient. The diameters of synthesized nanowires are between 30 to 160 nm and lengths up to 39 mum. SEM image shows that CuO nanowires were formed on top of the oxide grains. Vapor-solid growth mechanism is also suggested for the growth of this nanowire.

High Responsivity IR Photodetector Based on CuO Nanorod Arrays/AAO Assembly

Procedia Chemistry, 2016

Fast with high-performance CuO nanorod arrays IR photodetector was fabricated using CuO nanorod arrays/AAO assembly. The IR photodetector based on MSM with Al contact electrodes and its optoelectronic properties were examined. The CuO nanorod arrays used in the experiment were synthesized by DC electrodeposition method into Si-based/AAO template. The electrical performance and photoelectric response performance were studied, and the results showed that IR photodetector exhibited a high sensitivity to 808 nm infrared diode laser source. Both the response and recovery time were found to be fast; 0.19 and 0.15 s, respectively, which are shorter time compared to other IR photodetectors reported in the literature.

Growth and sensing properties of networked p-CuO nanowires

Sensors and Actuators B: Chemical, 2015

Networked p-CuO nanowires were grown on patterned-electrode pads by the thermal oxidation of Cu layers. Vertically aligned CuO nanowires grown on adjacent round-shape electrode pads were entangled, eventually forming nanowire-nanowire junctions. The sensing properties of the networked CuO nanowires were examined for a range of oxidizing gases, such as NO 2 , SO 2 and O 2 , and reducing gases, such as CO, C 6 H 6 , C 7 H 8 , and H 2 , and compared with those of networked n-SnO 2 nanowires. The gas responses of the networked CuO nanowires to the tested oxidizing gases were inferior to those of networked n-SnO 2 nanowires. In contrast, for reducing gases, the networked CuO nanowires showed comparable gas responses to the networked n-SnO 2 nanowires. The results suggest that the networked CuO nanowires are more promising for the detection of reducing gases rather than oxidizing gases.

Large-scale synthesis and field emission properties of vertically oriented CuO nanowire films

Nanotechnology, 2005

Using a simple method of direct heating of bulk copper plates in air, oriented CuO nanowire films were synthesized on a large scale. The length and density of nanowires could be controlled by growth temperature and growth time. Field emission (FE) measurements of CuO nanowire films show that they have a low turn-on field of 3.5-4.5 V µm −1 and a large current density of 0.45 mA cm −2 under an applied field of about 7 V µm −1. By comparing the FE properties of two types of samples with different average lengths and densities (30 µm, 10 8 cm −2 and 4 µm, 4 × 10 7 cm −2 , respectively), we found that the large length-radius ratio of CuO nanowires effectively improved the local field, which was beneficial to field emission. Verified with finite element calculation, the work function of oriented CuO nanowire films was estimated to be 2.5-2.8 eV.

Excellent field emission properties of vertically oriented CuO nanowire films

AIP Advances, 2018

Oriented CuO nanowire films were synthesized on a large scale using simple method of direct heating copper grids in air. The field emission properties of the sample can be enhanced by improving the aspect ratio of the nanowires just through a facile method of controlling the synthesis conditions. Although the density of the nanowires is large enough, the screen effect is not an important factor in this field emission process because few nanowires sticking out above the rest. Benefiting from the unique geometrical and structural features, the CuO nanowire samples show excellent field emission (FE) properties. The FE measurements of CuO nanowire films illustrate that the sample synthesized at 500 °C for 8 h has a comparatively low turn-on field of 0.68 V/μm, a low threshold field of 1.1 V/μm, and a large field enhancement factor β of 16782 (a record high value for CuO nanostructures, to the best of our knowledge), indicating that the samples are promising candidates for field emission...

Formation of CuO nanowires on Cu foil

Chemical physics letters, 2004

Cupric oxide, CuO, has many interesting properties. It has a monoclinic crystal structure, and is a p-type semiconductor with a narrow band gap (1.2 eV) [1]. It is also a Mott insulator (3d transition metal monoxide), the electronic structures of which cannot be simply described within the ...

Fabrication Process of Single CuO Nanowire Devices

Applied Science and Convergence Technology, 2014

One-dimensional nanostructures such as nanowires have been extensively investigated as a promising type of material for applications of nanoscale technology. The fabrication of single-nanowire devices are consequently important and interesting. This study introduced a feasible method for growing CuO nanowires on Cu foils. The nanowires had diameters of 10~150 nm and lengths of more than 7 μm and were grown by means of thermal oxidation in a vacuum. They were entirely and uniformly grown over the Cu foil surfaces and could be extracted and dispersed in an ethanol solution for further purposes. In addition, a simple fabrication method for realizing device functionality from a single CuO nanowire was reported. Fabricated devices were carefully checked by field-emission scanning electron microscopy (SEM). The probability of the realization of a single-CuO-nanowire device relative to that of all other types was estimated to be around 25%. Finally, the I-V characteristics of the devices were analyzed.

Synthesis and characterization of CuO nanowires by a simple wet chemical method

Nanoscale Research Letters, 2012

We report a successful synthesis of copper oxide nanowires with an average diameter of 90 nm and lengths of several micrometers by using a simple and inexpensive wet chemical method. The CuO nanowires prepared via this method are advantageous for industrial applications which require mass production and low thermal budget technique. It is found that the concentration and the quantity of precursors are the critical factors for obtaining the desired one-dimensional morphology. Field emission scanning electron microscopy images indicate the influence of thioglycerol on the dispersity of the prepared CuO nanowires possibly due to the stabilization effect of the surface caused by the organic molecule thioglycerol. The Fourier transform infrared spectrum analysis, energy dispersive X-ray analysis, X-ray diffraction analysis, and X-ray photoemission spectrum analysis confirm clearly the formation of a pure phase high-quality CuO with monoclinic crystal structure.

ZnO-Cu2O core-shell nanowires as stable and fast response photodetectors

Nano Energy, 2018

In this work, we present all-oxide p-n junction core-shell nanowires (NWs) as fast and stable self-powered photodetectors. Hydrothermally grown n-type ZnO NWs were conformal covered by different thicknesses (up to 420 nm) of p-type copper oxide layers through metalorganic chemical vapor deposition (MOCVD). The ZnO NWs exhibit a single crystalline Wurtzite structure, preferentially grown along the [002] direction, and energy gap Eg=3.24 eV. Depending on the deposition temperature, the copper oxide shell exhibits either a crystalline cubic structure of pure Cu2O phase (MOCVD at 250 C) or a cubic structure of Cu2O with the presence of CuO phase impurities (MOCVD at 300 C), with energy gap of 2.48 eV. The electrical measurements indicate the formation of a p-n junction after the deposition of the copper oxide layer. The core-shell photodetectors present a photoresponsivity at 0V bias voltage up to 7.7 µA/W and time response ≤0.09 s, the fastest ever reported for oxide photodetectors in the visible range, and among the fastest including photodetectors with response limited to the UV region. The bare ZnO NWs have slow photoresponsivity, without recovery after the end of photo-stimulation. The fast time response for the core-shell structures is due to the presence of the p-n junctions, which enables fast exciton separation and charge extraction. Additionally, the suitable electronic structure of the ZnO-Cu2O 2 heterojunction enables self-powering of the device at 0V bias voltage. These results represent a significant advancement in the development of low-cost, high efficiency and self-powered photodetectors, highlighting the need of fine tuning the morphology, composition and electronic properties of p-n junctions to maximize device performances.