Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs (original) (raw)
Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures
Karen L Kavanagh
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Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)
dhrubes biswas
Electronic Materials Letters, 2016
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Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers
Christian Lavoie
Applied Physics Letters, 1995
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Transmission Electron Microscopy, High Resolution X-Ray Diffraction and Rutherford Backscattering Study of Strain Release in InGaAs/GaAs Buffer Layers
narciso gambacorti
1994
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Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin layers on GaAs(111)A
Toru Akiyama
Condensed Matter
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Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements
Luisa Gonzalez
Applied Physics Letters, 2002
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Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures
Tadeusz Figielski
Microchimica Acta, 2004
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Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures
Paul Fewster
Applied Physics Letters, 1994
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Non-uniform strain relaxation in InxGa1−xAs layers
Luisa Gonzalez
Solid-State Electronics, 1996
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In situReal-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
Itaru Kamiya
Applied Physics Express, 2009
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Composition Modulation in Low Temperature Growth of InGaAs/GaAs System: Influence on Plastic Relaxation
Luisa Gonzalez
Microchimica Acta, 2004
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Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy
Itaru Kamiya
Journal of Crystal Growth, 2011
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New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well
David Gonzalez
Microelectronics Journal, 1999
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Deep levels in virtually unstrained InGaAs layers deposited on GaAs
Roberto Mosca
Journal of Applied Physics, 1998
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Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy
Eric Chason, R. Beresford
Journal of Crystal Growth, 2003
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Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(111)A
Henry Weinberg
Surface Science, 2003
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Strain relaxation in InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
Pablo Vaccaro
Journal of Crystal Growth, 1995
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Lattice tilt, concentration, and relaxation degree of partly relaxed InGaAs/GaAs structures
Ilya Feranchuk
physica status solidi (a), 2011
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Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy
Anna Vila, A. Cornet, J. Morante
Journal of Applied Physics, 1993
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Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium
Hyo-Hoon Park
Surface Science, 1996
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Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates
youssef tahri
Applied Physics Letters, 1996
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Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Anna Vila, A. Cornet, J. Morante
Journal of Applied Physics, 1997
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Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates
SERGIO I. MOLINA
Materials Science and Engineering: B, 1997
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Morphology and relaxation in InyGa1−yAs/GaAs multi-layer structures
Luke Lester
Journal of Crystal Growth, 2001
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Partial strain relaxation in (In, Ga) As epilayers on GaAs by means of twin formation
Peter Moeck
Journal of crystal …, 1999
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AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
Pablo Vaccaro
Microelectronics Journal, 1996
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Revealing of threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
Oleg Demchuk
physica status solidi (c), 2004
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Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
Jose Ignacio Izpura
Microelectronics Journal, 1999
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Growth and characterization of InAs epitaxial layer on GaAs(111)B
BAOLAI LIANG
Physical Review B, 2004
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Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress
giancarlo Salviati
Applied Surface Science, 2002
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Quantitative imaging of InGaAs/GaAs layers using transmission electron microscopy methods: characterization of stresses and chemical composition
Pierre Stadelmann, P A Buffat
Journal of Crystal Growth, 2002
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