Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs (original) (raw)

Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures

Karen L Kavanagh

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Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

dhrubes biswas

Electronic Materials Letters, 2016

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Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers

Christian Lavoie

Applied Physics Letters, 1995

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Transmission Electron Microscopy, High Resolution X-Ray Diffraction and Rutherford Backscattering Study of Strain Release in InGaAs/GaAs Buffer Layers

narciso gambacorti

1994

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Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin layers on GaAs(111)A

Toru Akiyama

Condensed Matter

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Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

Luisa Gonzalez

Applied Physics Letters, 2002

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Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures

Tadeusz Figielski

Microchimica Acta, 2004

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Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures

Paul Fewster

Applied Physics Letters, 1994

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Non-uniform strain relaxation in InxGa1−xAs layers

Luisa Gonzalez

Solid-State Electronics, 1996

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In situReal-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms

Itaru Kamiya

Applied Physics Express, 2009

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Composition Modulation in Low Temperature Growth of InGaAs/GaAs System: Influence on Plastic Relaxation

Luisa Gonzalez

Microchimica Acta, 2004

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Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy

Itaru Kamiya

Journal of Crystal Growth, 2011

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New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well

David Gonzalez

Microelectronics Journal, 1999

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Deep levels in virtually unstrained InGaAs layers deposited on GaAs

Roberto Mosca

Journal of Applied Physics, 1998

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Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy

Eric Chason, R. Beresford

Journal of Crystal Growth, 2003

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Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(111)A

Henry Weinberg

Surface Science, 2003

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Strain relaxation in InGaAs/GaAs quantum wells grown on GaAs (111)A substrates

Pablo Vaccaro

Journal of Crystal Growth, 1995

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Lattice tilt, concentration, and relaxation degree of partly relaxed InGaAs/GaAs structures

Ilya Feranchuk

physica status solidi (a), 2011

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Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy

Anna Vila, A. Cornet, J. Morante

Journal of Applied Physics, 1993

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Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

Hyo-Hoon Park

Surface Science, 1996

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Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates

youssef tahri

Applied Physics Letters, 1996

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Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

Anna Vila, A. Cornet, J. Morante

Journal of Applied Physics, 1997

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Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

SERGIO I. MOLINA

Materials Science and Engineering: B, 1997

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Morphology and relaxation in InyGa1−yAs/GaAs multi-layer structures

Luke Lester

Journal of Crystal Growth, 2001

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Partial strain relaxation in (In, Ga) As epilayers on GaAs by means of twin formation

Peter Moeck

Journal of crystal …, 1999

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AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates

Pablo Vaccaro

Microelectronics Journal, 1996

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Revealing of threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures

Oleg Demchuk

physica status solidi (c), 2004

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Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates

Jose Ignacio Izpura

Microelectronics Journal, 1999

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Growth and characterization of InAs epitaxial layer on GaAs(111)B

BAOLAI LIANG

Physical Review B, 2004

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Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress

giancarlo Salviati

Applied Surface Science, 2002

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Quantitative imaging of InGaAs/GaAs layers using transmission electron microscopy methods: characterization of stresses and chemical composition

Pierre Stadelmann, P A Buffat

Journal of Crystal Growth, 2002

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