Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers (original) (raw)
Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements
Luisa Gonzalez
Applied Physics Letters, 2002
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Photoreflectance study of partially relaxed epitaxial InGaAs on GaAs
J. Serafińczuk
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Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures
Karen L Kavanagh
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Optical study of strained and relaxed epitaxial InxGa1−xAs on GaAs
Claudio Ferrari
Journal of Applied Physics, 1995
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Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers
Christian Lavoie
Applied Physics Letters, 1995
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In situReal-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
Itaru Kamiya
Applied Physics Express, 2009
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Epilayer thickness influence on composition modulation of low temperature grown InGaAs/GaAs (001) layers
Luisa Gonzalez
2004
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Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs
SERGIO I. MOLINA
Thin Solid Films, 1998
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Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(111)A
Henry Weinberg
Surface Science, 2003
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Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy
Itaru Kamiya
Journal of Crystal Growth, 2011
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Composition Modulation in Low Temperature Growth of InGaAs/GaAs System: Influence on Plastic Relaxation
Luisa Gonzalez
Microchimica Acta, 2004
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In situ detection of an initial elastic relaxation stage during growth of In0.2Ga0.8As on GaAs(0 0 1)
Luisa Gonzalez
Applied Surface Science, 2002
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Deep levels in virtually unstrained InGaAs layers deposited on GaAs
Roberto Mosca
Journal of Applied Physics, 1998
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Non-uniform strain relaxation in In x Ga 1− x As layers
Peter Goodhew
Solid-state Electronics, 1996
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Strain induced 2D–3D growth mode transition in molecular beam epitaxy of InxGa1t-xAs on GaAs (001)
Artemis Ceschin
Journal of Crystal Growth, 1991
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Growth phenomena and characteristics of strained In_x Ga_(1− x) As on GaAs
R. Gibala
1989
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Relaxation behavior of undoped InxGa1−xP 0.5<x<0.7 grown on GaAs by atomic layer molecular-beam epitaxy
Luisa Gonzalez
Journal of Applied Physics, 1996
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Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy
Eric Chason, R. Beresford
Journal of Crystal Growth, 2003
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Residual strain measurements in InGaAs metamorphic buffer layers on GaAs
Luca Seravalli
European Physical Journal B, 2007
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Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures
Paul Fewster
Applied Physics Letters, 1994
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Quantitative imaging of InGaAs/GaAs layers using transmission electron microscopy methods: characterization of stresses and chemical composition
Pierre Stadelmann, P A Buffat
Journal of Crystal Growth, 2002
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Morphology and relaxation in InyGa1−yAs/GaAs multi-layer structures
Luke Lester
Journal of Crystal Growth, 2001
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Lattice tilt, concentration, and relaxation degree of partly relaxed InGaAs/GaAs structures
Ilya Feranchuk
physica status solidi (a), 2011
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Lattice strain measurement of strained In0.1Ga0.9As/GaAs heterostructures by RBS and channeling
A. Siddiqui, Anand Pathak
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
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Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers
Louis Guido
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Transmission Electron Microscopy, High Resolution X-Ray Diffraction and Rutherford Backscattering Study of Strain Release in InGaAs/GaAs Buffer Layers
narciso gambacorti
1994
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The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS
A. Ignatiev
Journal of Crystal Growth, 1992
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Effects of buffer layer thickness and film compositional grading on strain relaxation kinetics in InAs/GaAs(111)A heteroepitaxy
R. Pelzel
Surface Science, 2000
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Atomic-resolution study of lattice distortions of buriedInxGa1−xAsmonolayers in GaAs(001)
Michael Bedzyk
Physical Review B, 1999
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Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
Paul R Berger
Applied Physics Letters, 1988
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Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
Nikolay Bert
Semiconductors, 1999
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Comparison of strain relaxation in InGaAsN and InGaAs thin films
Adil A. Chahboun
Applied Physics Letters, 2002
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