Electronic states of thin epitaxial layers of Ge on Si(100) (original) (raw)

Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation

Giovanni Capellini

Applied Surface Science, 1996

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A first principles study of sub-monolayer Ge on Si()

Jorge Oviedo

Surface Science, 2002

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STM studies of GeSi thin layers epitaxially grown on Si(111)

A. Sgarlata

Applied Surface Science, 1996

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Nano-Thin Films of Ge on GaAs: Preparation and Properties

Vlado Lazarov

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Epitaxial Ge Growth on Si(111) Covered with Ultrathin SiO<sub>2</sub> Films

Konstantin Romanyuk

Journal of Surface Engineered Materials and Advanced Technology, 2013

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The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy

Larisa Arapkina

Semiconductor Science and Technology, 2020

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Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation

Juan F . Castro-Cal

Surface Science, 1998

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Thickness Dependent Structural, Electronic, and Optical Properties of Ge Nanostructures

Gunadhor Okram

Journal of Nanoscience and Nanotechnology, 2008

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Material Characterization of Epitaxial GaAs and Ge Films on (100) Si Substrates

George Celler

MRS Proceedings, 1986

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Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

T. Jansens

Materials Science in Semiconductor Processing, 2006

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A first principles study of sub-monolayer Ge on Si (001)

juce Oviedo

2002

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Thick pure Ge films for photodetectors

Gianlorenzo Masini

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1998

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Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition

Davide Cammilleri

Journal of Crystal Growth, 2007

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Ge/GaAs (100) Thin Films: Large Effect of Film Growth Rate and Thicknesses on Surface Morphology, Intrinsic Stresses and Electrical Properties

Peter Lytvyn

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Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films

Mazwan Mansor

Applied Surface Science, 2010

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Low-temperature molecular beam epitaxy of Ge on Si

Nikolai Sobolev

Materials Science in Semiconductor Processing, 2005

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Effect of film growth rate and thickness on properties of Ge/GaAs (100) thin films

Leonardo Lari, Vlado Lazarov

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Structural study of Ge/GaAs thin films

Leonardo Lari, Vlado Lazarov

Journal of Physics: Conference Series, 2012

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Critical thickness of Ge/GaAs (001) epitaxial films

Angel G Rodriguez, Miguel A Vidal

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Surface Morphology during Multilayer Epitaxial Growth of Ge(001)

Dr. Mohammed M Hasan

Physical Review Letters, 1995

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Substrate orientation dependence on the solid phase epitaxial growth rate of Ge

Jose Gomez-Selles

Journal of Applied Physics, 2013

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The studies of Ge quantum dots on strained Si 0.7Ge 0.3 layer by photoluminescence and deep level transient spectroscopy

Zhensheng Tao

Applied Surface Science, 2009

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Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge 3 H 8 , Ge 4 H 10 )

Andrew Chizmeshya

Chemistry of Materials, 2012

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Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

Guangnan Zhou

Optical Materials Express, 2018

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Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

Alexandra Abbadie

Journal of Crystal Growth, 2010

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