T. Jansens - Academia.edu (original) (raw)

Papers by T. Jansens

Research paper thumbnail of Industrial integration of interdigitated back-contact Si solar cells by laser ablation

2011 37th IEEE Photovoltaic Specialists Conference, 2011

Interdigitated back-contact solar cells for high efficiency applications are usually manufactured... more Interdigitated back-contact solar cells for high efficiency applications are usually manufactured in R&D laboratories by multiple subsequent lithography steps. Here the patterning by litho-free steps is proposed and implemented. The current status of the small area (2×2cm2 and 4×4cm2) n-type IBC solar cells integration flow is presented with exclusively laser-based patterning scheme: emitter, metal point contacts and electrode separation. Electrode separation is performed in 2 typical configurations: above emitter region or BSF region, where the 2nd location proofs to be beneficial. The best Suns Voc reaches up to 647 mV and p-FF up to 83%.

Research paper thumbnail of Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

2006 International Electron Devices Meeting, 2006

Page 1. Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser A... more Page 1. Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach T. Noda1,2, W. Vandervorst3,4, S. Felch5, V. Parihar5, C. Vrancken3 ...

Research paper thumbnail of 031911 Element-selective vertical height determination for an organic monolayer by a scanned-energy photoelectron-yield soft x-ray standing wave technique (3 pages)

Research paper thumbnail of Towards 20.5% efficiency PERC Cells by improved understanding through simulation

Energy Procedia, 2011

This paper investigates by means of finite-elements and SPICE simulation the further improvement ... more This paper investigates by means of finite-elements and SPICE simulation the further improvement of solar cell performance of PERC-type cells by introduction of industry-compatible solutions, such as a 120 sq. phosphorous emitter with a lower surface concentration than that of current 60 sq. standard emitters and the replacement of the silver screen-printed front-side metallization by narrow, dense electro-plated copper lines on lowly resistive Ti or NiSi contacts.

Research paper thumbnail of The Role of Ion Beam Technology in the Development of Integrated Optical Monitors Suitable

Research paper thumbnail of Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

Materials Science in Semiconductor Processing, 2006

Epitaxial fully strained Si films are known to form an effective passivation of the Ge(1 0 0) sur... more Epitaxial fully strained Si films are known to form an effective passivation of the Ge(1 0 0) surface. However, we show using low-energy secondary ion mass spectrometry (SIMS) that considerable Ge surface segregation occurs for Si films grown from SiH 4 at 500 1C. In this study, we develop an alternative deposition process at 350 1C using Si 3 H 8 which significantly decreases the Ge peak at the Si surface. We attribute this strong reduction mainly to the fact that growth at 350 1C from trisilane proceeds below the Si-H desorption temperature. Charge pumping measurements on n-type Ge devices show a reduction by approximately a factor three in the high-k/substrate interface trap density for the samples with 350 1C Si passivation, compared to those using a Si passivation deposited at 500 1C. r

Research paper thumbnail of Shallow Junction Ion Implantation in Ge and Associated Defect Control

Journal of The Electrochemical Society, 2006

We have studied implant-induced damage, defect annealing, and recrystallization of B, Ga, P, As, ... more We have studied implant-induced damage, defect annealing, and recrystallization of B, Ga, P, As, and Sb introduced in Ge by ion implantation at high doses, such that dopant chemical concentrations are above the corresponding solubility in Ge, with energies that target ...

Research paper thumbnail of Formation of germanium shallow junction by flash annealing

Nuclear Instruments and …, 2007

We have investigated flash-lamp annealing (FLA) of germanium wafers doped with phosphorous and bo... more We have investigated flash-lamp annealing (FLA) of germanium wafers doped with phosphorous and boron introduced in the crystal by ion implantation. Annealing was performed by using pre-heating at 400-450°C in a conventional rapid thermal processing (RTP) unit and a fast (3-20 ms) FLA annealing at 800°C or 900°C. Diffusion of P is suppressed during the 800°C-20 ms FLA annealing, while concentration-enhanced diffusion occurs upon 900°C FLA anneals. Importantly, in both cases P activation seems to be enhanced by the FLA process. However, junction stability following the FLA process and possible deactivation are a concern.

Research paper thumbnail of Errors in near-surface and interfacial profiling of boron and arsenic

Applied Surface Science, 2004

To get an insight in the diffusion behavior of dopants such as arsenic and boron after annealing ... more To get an insight in the diffusion behavior of dopants such as arsenic and boron after annealing and in particular their segregation characteristics towards the interface in oxide structures on silicon, it is necessary to probe the dopant profile with very high accuracy and depth resolution. Sputter depth profiling as employed in secondary ion mass spectrometry (SIMS) is frequently used

Research paper thumbnail of Towards a model for the formation of positive Si+ ions

Applied Surface Science, 2003

The determination of the oxygen concentration at the surface is the critical parameter in all mod... more The determination of the oxygen concentration at the surface is the critical parameter in all models [Surf. Sci. 112 (1981) 168; Nucl. 4456] that study the large enhancement of the ionisation probability of positive ions by the presence of oxygen at the surface. Different analysis techniques (low energy ion scattering, Rutherford back scattering spectrometry and secondary ion mass spectrometry) are combined in order to clarify the oxygen dependence of the ionisation probability of Si , a Si , during O 2 bombardment. A ratio of ion signals is correlated with the surface oxygen content, determined by LEIS, allowing us to study the enhancement of the ionisation probability of Si by oxygen at the surface for energies between 1 and 5 keV per O 2 ion. For a wide range of oxidation conditions the oxygen enhancement can be described by a power law dependence on the oxygen content a Si G C O =C Si 3:24 , whereby the power shows no signi®cant energy dependence for the studied energy range. The steep enhancement of the ionisation probability at high oxygen content, which is energy dependent, can be correlated to a change in the surface structure: enhanced shadowing of silicon by oxygen, observed by LEIS. #

Research paper thumbnail of On the correlation between Si+ yields and surface oxygen concentration using in situ SIMS-LEIS

Applied Surface Science, 2003

To study the oxygen dependence of ionisation processes during O 2 bombardment, low-energy ion sca... more To study the oxygen dependence of ionisation processes during O 2 bombardment, low-energy ion scattering was used as a surface analysis technique since it has very high surface sensitivity. An LEIS instrument was recon®gured to collect secondary ions simultaneously with the compositional analysis based on LEIS. The gradual conversion of the Si surface into an oxidised surface under oxygen bombardment has been studied. A correlation between the Si intensity and the oxygen concentration could be established, i.e. ISi G C O =C Si 2:9 . It was observed that, at the stage where the oxygen concentration no longer increases, the amount of visible (for LEIS) Si atoms decreases further, implying a further structural change. This change coincides with the steep increase in the Si ion intensity near complete oxidation and can be interpreted as the main cause for this change in ionisation probability. #

Research paper thumbnail of Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

Applied Physics Letters, 2005

We investigate the influence of the initial stage of the thermal treatment during solid-phase epi... more We investigate the influence of the initial stage of the thermal treatment during solid-phase epitaxial regrowth (SPER) on the electrical activation level of arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and the use of low-temperature preanneals. ...

Research paper thumbnail of Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

Advanced Microelectronics, 2007

A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation te... more A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-κ dielectric deposition to obtain low interface state density and high carrier mobility. A review on some possible treatments to passivate the Ge surface is discussed. Another important aspect is the activation of p- and n-type dopants to form the

Research paper thumbnail of Industrial integration of interdigitated back-contact Si solar cells by laser ablation

2011 37th IEEE Photovoltaic Specialists Conference, 2011

Interdigitated back-contact solar cells for high efficiency applications are usually manufactured... more Interdigitated back-contact solar cells for high efficiency applications are usually manufactured in R&D laboratories by multiple subsequent lithography steps. Here the patterning by litho-free steps is proposed and implemented. The current status of the small area (2×2cm2 and 4×4cm2) n-type IBC solar cells integration flow is presented with exclusively laser-based patterning scheme: emitter, metal point contacts and electrode separation. Electrode separation is performed in 2 typical configurations: above emitter region or BSF region, where the 2nd location proofs to be beneficial. The best Suns Voc reaches up to 647 mV and p-FF up to 83%.

Research paper thumbnail of Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

2006 International Electron Devices Meeting, 2006

Page 1. Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser A... more Page 1. Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach T. Noda1,2, W. Vandervorst3,4, S. Felch5, V. Parihar5, C. Vrancken3 ...

Research paper thumbnail of 031911 Element-selective vertical height determination for an organic monolayer by a scanned-energy photoelectron-yield soft x-ray standing wave technique (3 pages)

Research paper thumbnail of Towards 20.5% efficiency PERC Cells by improved understanding through simulation

Energy Procedia, 2011

This paper investigates by means of finite-elements and SPICE simulation the further improvement ... more This paper investigates by means of finite-elements and SPICE simulation the further improvement of solar cell performance of PERC-type cells by introduction of industry-compatible solutions, such as a 120 sq. phosphorous emitter with a lower surface concentration than that of current 60 sq. standard emitters and the replacement of the silver screen-printed front-side metallization by narrow, dense electro-plated copper lines on lowly resistive Ti or NiSi contacts.

Research paper thumbnail of The Role of Ion Beam Technology in the Development of Integrated Optical Monitors Suitable

Research paper thumbnail of Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

Materials Science in Semiconductor Processing, 2006

Epitaxial fully strained Si films are known to form an effective passivation of the Ge(1 0 0) sur... more Epitaxial fully strained Si films are known to form an effective passivation of the Ge(1 0 0) surface. However, we show using low-energy secondary ion mass spectrometry (SIMS) that considerable Ge surface segregation occurs for Si films grown from SiH 4 at 500 1C. In this study, we develop an alternative deposition process at 350 1C using Si 3 H 8 which significantly decreases the Ge peak at the Si surface. We attribute this strong reduction mainly to the fact that growth at 350 1C from trisilane proceeds below the Si-H desorption temperature. Charge pumping measurements on n-type Ge devices show a reduction by approximately a factor three in the high-k/substrate interface trap density for the samples with 350 1C Si passivation, compared to those using a Si passivation deposited at 500 1C. r

Research paper thumbnail of Shallow Junction Ion Implantation in Ge and Associated Defect Control

Journal of The Electrochemical Society, 2006

We have studied implant-induced damage, defect annealing, and recrystallization of B, Ga, P, As, ... more We have studied implant-induced damage, defect annealing, and recrystallization of B, Ga, P, As, and Sb introduced in Ge by ion implantation at high doses, such that dopant chemical concentrations are above the corresponding solubility in Ge, with energies that target ...

Research paper thumbnail of Formation of germanium shallow junction by flash annealing

Nuclear Instruments and …, 2007

We have investigated flash-lamp annealing (FLA) of germanium wafers doped with phosphorous and bo... more We have investigated flash-lamp annealing (FLA) of germanium wafers doped with phosphorous and boron introduced in the crystal by ion implantation. Annealing was performed by using pre-heating at 400-450°C in a conventional rapid thermal processing (RTP) unit and a fast (3-20 ms) FLA annealing at 800°C or 900°C. Diffusion of P is suppressed during the 800°C-20 ms FLA annealing, while concentration-enhanced diffusion occurs upon 900°C FLA anneals. Importantly, in both cases P activation seems to be enhanced by the FLA process. However, junction stability following the FLA process and possible deactivation are a concern.

Research paper thumbnail of Errors in near-surface and interfacial profiling of boron and arsenic

Applied Surface Science, 2004

To get an insight in the diffusion behavior of dopants such as arsenic and boron after annealing ... more To get an insight in the diffusion behavior of dopants such as arsenic and boron after annealing and in particular their segregation characteristics towards the interface in oxide structures on silicon, it is necessary to probe the dopant profile with very high accuracy and depth resolution. Sputter depth profiling as employed in secondary ion mass spectrometry (SIMS) is frequently used

Research paper thumbnail of Towards a model for the formation of positive Si+ ions

Applied Surface Science, 2003

The determination of the oxygen concentration at the surface is the critical parameter in all mod... more The determination of the oxygen concentration at the surface is the critical parameter in all models [Surf. Sci. 112 (1981) 168; Nucl. 4456] that study the large enhancement of the ionisation probability of positive ions by the presence of oxygen at the surface. Different analysis techniques (low energy ion scattering, Rutherford back scattering spectrometry and secondary ion mass spectrometry) are combined in order to clarify the oxygen dependence of the ionisation probability of Si , a Si , during O 2 bombardment. A ratio of ion signals is correlated with the surface oxygen content, determined by LEIS, allowing us to study the enhancement of the ionisation probability of Si by oxygen at the surface for energies between 1 and 5 keV per O 2 ion. For a wide range of oxidation conditions the oxygen enhancement can be described by a power law dependence on the oxygen content a Si G C O =C Si 3:24 , whereby the power shows no signi®cant energy dependence for the studied energy range. The steep enhancement of the ionisation probability at high oxygen content, which is energy dependent, can be correlated to a change in the surface structure: enhanced shadowing of silicon by oxygen, observed by LEIS. #

Research paper thumbnail of On the correlation between Si+ yields and surface oxygen concentration using in situ SIMS-LEIS

Applied Surface Science, 2003

To study the oxygen dependence of ionisation processes during O 2 bombardment, low-energy ion sca... more To study the oxygen dependence of ionisation processes during O 2 bombardment, low-energy ion scattering was used as a surface analysis technique since it has very high surface sensitivity. An LEIS instrument was recon®gured to collect secondary ions simultaneously with the compositional analysis based on LEIS. The gradual conversion of the Si surface into an oxidised surface under oxygen bombardment has been studied. A correlation between the Si intensity and the oxygen concentration could be established, i.e. ISi G C O =C Si 2:9 . It was observed that, at the stage where the oxygen concentration no longer increases, the amount of visible (for LEIS) Si atoms decreases further, implying a further structural change. This change coincides with the steep increase in the Si ion intensity near complete oxidation and can be interpreted as the main cause for this change in ionisation probability. #

Research paper thumbnail of Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

Applied Physics Letters, 2005

We investigate the influence of the initial stage of the thermal treatment during solid-phase epi... more We investigate the influence of the initial stage of the thermal treatment during solid-phase epitaxial regrowth (SPER) on the electrical activation level of arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and the use of low-temperature preanneals. ...

Research paper thumbnail of Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

Advanced Microelectronics, 2007

A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation te... more A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-κ dielectric deposition to obtain low interface state density and high carrier mobility. A review on some possible treatments to passivate the Ge surface is discussed. Another important aspect is the activation of p- and n-type dopants to form the