Recombination at Oxide Precipitates in Silicon (original) (raw)
(Invited) The Impact of Oxide Precipitates on Minority Carrier Lifetime in Czochralski Silicon
Karsten Bothe
2013
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Minority Carrier Lifetime in Czochralski Silicon Containing Oxide Precipitates
Karsten Bothe
2000
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The effect of oxide precipitates on minority carrier lifetime in p-type silicon
Mariano del Olmo
Journal of Applied Physics, 2011
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The effect of oxide precipitates on minority carrier lifetime in n-type silicon
Karsten Bothe
Journal of Applied Physics, 2015
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On the mechanism of recombination at oxide precipitates in silicon
Karsten Bothe
Applied Physics Letters, 2013
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Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon
Robert Falster
IEEE Journal of Photovoltaics
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Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon
Karsten Bothe
Applied Physics Letters, 2002
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Minority carrier lifetime in silicon photovoltaics: The effect of
Karsten Bothe
2014
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Recombination and trapping in multicrystalline silicon
Matthew Stocks
IEEE Transactions on Electron Devices, 1999
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Recombination centers in electron-irradiated Czochralski silicon solar cells
Mimoun Zazoui
Journal of Applied Physics, 1994
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Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
Karsten Bothe
Journal of Applied Physics, 2012
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Lifetime degradation of n-type Czochralski silicon after hydrogenation
Anthony Peaker
Journal of Applied Physics, 2018
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Fast-forming boron-oxygen-related recombination center in crystalline silicon
Karsten Bothe
Applied Physics Letters, 2005
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Experimental investigations of the dependence of the lifetime of the optically generated minority carriers in n-type silicon on the intensity of its illumination
Miroslaw Malinski
PRZEGLĄD ELEKTROTECHNICZNY
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Recombination via point defects and their complexes in solar silicon
Anthony Peaker
physica status solidi (a), 2012
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Light-Induced Degradation of the Carrier Lifetime in N-Type Czochralski-Grown Silicon Doped with Boron and Phosphorus
Karsten Bothe
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Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers
F. Kirscht, Klaus Schmalz
Materials Science and Engineering: B, 1996
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Generalized procedure to determine the dependence of steady-state photoconductance lifetime on the occupation of multiple defects
Bijaya Babu Paudyal
Journal of Applied Physics, 2008
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Influence of Residual Point Defect Supersaturation on the Formation of Grown-In Oxide Precipitate Nuclei in CZ-Si
Jan Vanhellemont
Journal of The Electrochemical Society, 1998
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Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical route
Ragnar Tronstad
Solar Energy Materials and Solar Cells, 2011
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Silicon epitaxial layer recombination and generation lifetime characterization
G. Opposits
IEEE Transactions on Electron Devices, 2003
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Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon
Sanju Deenapanray
2004
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INFLUENCE OF RTP PROCESS ON THE CARRIER LIFETIME IN BARE CZ SILICON WAFERS
YACINE KOUHLANE
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Evidence of an identical firing-activated carrier-induced defect in monocrystalline and multicrystalline silicon
Alison Ciesla née Wenham
Solar Energy Materials and Solar Cells, 2017
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Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon
Nitin Nampalli
Applied Physics Letters, 2015
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Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers
nabil khelifati
Acta Physica Polonica A, 2016
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Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers
Nacerdine Bourouba
Acta Physica Polonica A, 2017
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Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers
julien degoulange
IEEE Journal of Photovoltaics
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Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers
Bouhafs Djoudi
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Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry
Adriana Gutiérrez
Physica B: Condensed Matter, 2011
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Temperature dependent carrier lifetime studies of Mo in crystalline silicon
Bijaya Babu Paudyal
Journal of Applied Physics, 2010
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Performance Degradation of Silicon Solar Cells Triggered by Carrier Recombination
Karsten Bothe
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Recombination activity of iron-related complexes in silicon studied by temperature dependent carrier lifetime measurements
A. Rotondaro
Applied Physics Letters, 1995
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On the recombination activity of oxygen precipitation related lattice defects in silicon
Jan Vanhellemont
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Micro-defect effects on minority carrier lifetime in high purity dislocation-free silicon single crystals
T. Ciszek
1988
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