Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers (original) (raw)

The Impact Of Organic Contamination On The Oxide-Silicon Interface

G. Borionetti

2011

View PDFchevron_right

Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers

Nacerdine Bourouba

Acta Physica Polonica A, 2017

View PDFchevron_right

Chromium Contamination in Silicon: Detection and Impact on Oxide Performances

M. Cottini

Solid State Phenomena, 2005

View PDFchevron_right

Oxygen precipitates in short-time annealed Czochralski silicon

B. Pivac

1993

View PDFchevron_right

Study of the mechanisms of oxygen precipitation in rta annealed Cz-Si wafers

I. Lisovskyy, Andrey Sarikov, V. Kladko

2009

View PDFchevron_right

Deep levels in heat-treated and 252Cf-irradiated p-type silicon substrates with different oxygen content

Jan Vanhellemont

View PDFchevron_right

(Invited) The Impact of Oxide Precipitates on Minority Carrier Lifetime in Czochralski Silicon

Karsten Bothe

2013

View PDFchevron_right

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

Alexander Ulyashin

Materials Science and Engineering B, 2003

View PDFchevron_right

Minority Carrier Lifetime in Czochralski Silicon Containing Oxide Precipitates

Karsten Bothe

2000

View PDFchevron_right

Mechanisms of Oxygen Precipitation in Cz-Si Wafers Subjected to Rapid Thermal Anneals

C. Claeys, Andrey Sarikov

Journal of The Electrochemical Society, 2011

View PDFchevron_right

Prediction of Spatial Patterns of Oxygen Precipitation in Silicon

Gary Markovits

Journal of The Electrochemical Society, 1984

View PDFchevron_right

Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

Robert Falster

IEEE Journal of Photovoltaics

View PDFchevron_right

The effect of oxide precipitates on minority carrier lifetime in n-type silicon

Karsten Bothe

Journal of Applied Physics, 2015

View PDFchevron_right

Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy

MAx Klingsporn

physica status solidi (RRL) - Rapid Research Letters, 2015

View PDFchevron_right

Impact of oxygen related extended defects on silicon diode characteristics

Jan Vanhellemont

View PDFchevron_right

Recombination at Oxide Precipitates in Silicon

Karsten Bothe

Solid State Phenomena, 2011

View PDFchevron_right

Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

O. Gudymenko, Andrey Sarikov, V. Kladko

Semiconductor Science and Technology, 2014

View PDFchevron_right

Effects of boron concentration upon oxygen precipitation in CZ silicon

Vivian Stojanoff

Journal of Crystal Growth, 1987

View PDFchevron_right

Metal and organic contamination effects on the characteristics of thin oxides thermally grown on silicon based wafers

G. Borionetti

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006

View PDFchevron_right

Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation

Nelly Burle

Solid State Phenomena, 2011

View PDFchevron_right

Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

Jan Vanhellemont

Materials Science and Engineering: B, 1996

View PDFchevron_right

Characterization of the oxygen distribution in Czochralski silicon using hydrogen-enhanced thermal donor formation

Alexander Ulyashin

Materials Science and Engineering B Advanced Functional Solid State Materials, 2000

View PDFchevron_right

Comprehensive analysis of the impact of boron and oxygen on the metastable defect in Cz silicon

Karsten Bothe

2003

View PDFchevron_right

A survey of non-destructive surface characterization methods used to insure reliable gate oxide fabrication for silicon IC devices

Alain Diebold

Surface and Interface Analysis, 1993

View PDFchevron_right

Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results

Bhushan SOPORI

IEEE Journal of Photovoltaics, 2017

View PDFchevron_right

Lifetime degradation of n-type Czochralski silicon after hydrogenation

Anthony Peaker

Journal of Applied Physics, 2018

View PDFchevron_right

Behavior of SiNx/SiO2 Double Layer for Surface Passivation of Compensated p-Type Czochralski Silicon Wafers

Nacerdine Bourouba

Journal of Electronic Materials, 2019

View PDFchevron_right

Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

Andreas Ehlert

Materials Science and Engineering: B, 1996

View PDFchevron_right

Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide

Jae-geun Oh

Japanese Journal of Applied Physics, 2004

View PDFchevron_right

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Nitin Nampalli

Applied Sciences

View PDFchevron_right

Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

Bouhafs Djoudi

View PDFchevron_right

Crystal Surface Defects and Oxygen Gettering in Thermally Oxidized Bonded SOI Wafers

Pagona Papakonstantinou

Journal of The Electrochemical Society, 2001

View PDFchevron_right

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

Mariano del Olmo

Journal of Applied Physics, 2011

View PDFchevron_right

Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon

Karsten Bothe

Applied Physics Letters, 2002

View PDFchevron_right

Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysis

J. Samitier

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993

View PDFchevron_right