State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers (original) (raw)
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Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
… Arsenide and Other …, 2005
In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 µm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design.
A compact 16 watt X-band GaN-MMIC power amplifier
… Digest, 2006. IEEE …, 2006
GaN MMIC power amplifiers for X-Band applications are presented delivering more than 16 W of cw output power while being extremely small in chip size. With a single-device amplifier on a 1.8x2.2 mm 2 chip 7.8 W output power at 8 GHz are achieved with a maximum PAE of 44%. On a chip of 2.2x3.3 mm 2 size only, a two-stage amplifier is realized with 18 dB of linear gain and 16 W cw output power at 8 GHz. PAE of the MMIC reaches 30%.
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An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P 1dB), 40% power added efficiency (PAE) at (P 1dB) in the desired frequency band (8 GHz-8.4 GHz) with V ds = 30V.
A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
A two-stage high-power amplifier MMIC was realized with a chip size of 4.5 mm /spl times/ 3 mm operating between 8 GHz and 10 GHz based on a fully integrated microstrip AlGaN/GaN HEMT technology on s.i. SiC substrate. The MMIC device delivers a maximum pulsed output power of 8.9 W (39.5 dBm) at 8.5 GHz at V/sub DS/ = 31 V, 10 % duty cycle, and more than 6 dB gain compression level, and features a linear gain in excess of 20 dB.
A Compact 70 Watt Power Amplifier MMIC Utilizing S-Band GaN on SiC HEMT Process
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012
The design and measured performance of a compact power amplifier MMIC utilizing a 0.25μm S-band GaN HEMT process technology is presented. Measured in-fixture results for the two-stage amplifier at 35V drain bias showed a nominal small-signal gain of 30 dB, a minimum output power of 50 W and a minimum PAE of 45% in the 3.1-4.3 GHz band. A peak output power of 60W, PAE of 48.3% were measured at 3.3 GHz with 35V operation. At 40V operation, this MMIC is capable of greater than 70W output power. With a compact 4.1x3.1 mm 2 die area, an output power density of 5.6W/mm 2 P sat per die area for a single fully monolithic S-band HPA is demonstrated. In addition, the MMIC PA provides near constant efficiency over a wide range of bias voltages enabling desirable P sat control with modulation of drain voltage.
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A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
IEEE Microwave and Wireless Components Letters, 2005
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2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013), 2013
The design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15μm GaN HEMT process technology is presented. Measured in-fixture continuous wave (CW) results for the 3-stage balanced amplifier demonstrates up to 11W of output power and 30% power added efficiency (PAE) at 30GHz. The 3-stage single-ended design produced over 6W of output power and up to 34% PAE. The die size for the balanced and single-ended MMICs are 3.24x3.60mm 2 and 1.74x3.24mm 2 respectively.
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
This paper describes a C-band monolithic high power amplifier implemented with a 0.25 ȝm AlGaN/GaN HEMT process. The circuit has been designed for use in synthetic aperture radar antenna modules in space applications. The amplifier is made up of two stages: the final stage consists of eight devices for 9.6 mm of total periphery that are merged together to form a single power-bar. A quasi-inverse class-F regime for the HEMTs is implemented by harmonic tuning in order to achieve the best tradeoff between maximum output power and efficiency. When operating in pulsed mode with 50 ȝs pulse width and 10% duty cycle, the amplifier delivers about 40 watt with 21 dB of associated gain and 40% PAE over a 15% bandwidth centered at 5.4 GHz. The proposed MMIC HPA is a very valuable replacement for lower output power MMIC GaAs HPAs or hybrid HPAs, which are currently exploited at C-band for these applications. Index Terms-High Power Amplifier, MMIC, AlGaN/GaN, high efficiency power amplifiers.
X-band 10W MMIC high-gain power amplifier with up to 60% PAE
2014 9th European Microwave Integrated Circuit Conference, 2014
This paper describes a power amplifier operating at X-band demonstrating 61% power added efficiency (PAE) at 10 GHz associated with 14 W output power in CW mode. The design uses a 0.15µm GaN 3MI process from TriQuint TM . The devices operate at a peak power density of 3.8 W/mm at 10 GHz with a PAE higher than 48% over a 500-MHz bandwidth. The two-stage MMIC PA has a saturated gain of 19 dB at peak efficiency. The total size of the chip is 9.2 mm 2 .