High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser (original) (raw)

Injection lasers based on InGaAs quantum dots in an AlGaAs matrix

Dieter Bimberg

Journal of Electronic Materials, 1998

View PDFchevron_right

High-performance InAs/GaAs quantum dot laser with dot layers grown at 425 oC

yang wang

Chinese Optics Letters, 2013

View PDFchevron_right

1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

Dieter Bimberg

Applied Physics Letters, 2004

View PDFchevron_right

Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser

Gabriel Walter

Applied Physics Letters, 2001

View PDFchevron_right

The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers

Ian Sellers

IEEE Photonics Technology Letters, 2000

View PDFchevron_right

Quantum dot lasers: breakthrough in optoelectronics

Dieter Bimberg

Thin Solid Films, 2000

View PDFchevron_right

Self-assembled In/sub 0.5/Ga/sub 0.5/As quantum-dot lasers with doped active region

Tzer-En Nee

IEEE Photonics Technology Letters, 2000

View PDFchevron_right

QD lasers: physics and applications

A. Kozhukhov

Semiconductor and Organic Optoelectronic Materials and Devices, 2005

View PDFchevron_right

Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate

jacky even

Applied Physics Letters, 2008

View PDFchevron_right

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

Nikolay Bert

Applied Physics Letters, 1999

View PDFchevron_right

MBE growth and characterisation of InGaAs quantum dot lasers

Jen-inn Chyi

Materials Science and Engineering: B, 2000

View PDFchevron_right

Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers

Dieter Bimberg

Journal of Crystal Growth, 1999

View PDFchevron_right

Gain characterisation of 1.3μm GaAs quantum dot lasers

hifsa shahid

2012

View PDFchevron_right

Radiation characteristics of injection lasers based on vertically coupled quantum dots

abc acb

Superlattices and Microstructures, 1997

View PDFchevron_right

InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate

N. Pikhtin

Semiconductors, 2010

View PDFchevron_right

InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain

Zh N

Journal of Crystal Growth, 2003

View PDFchevron_right

InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

Huiyun Liu

IEEE Journal of Selected Topics in Quantum Electronics, 2013

View PDFchevron_right

Electrically pumped continuous‐wave 1.3‐µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates

Huiyun Liu

IET Optoelectronics, 2014

View PDFchevron_right

(In,Ga)As/GaP electrical injection quantum dot laser

Sven Hofling

Applied Physics Letters, 2014

View PDFchevron_right

QD-lasers up to and beyond 1300 nm

Dieter Bimberg

1999

View PDFchevron_right

QD lasers: physics and applications

S. Mikhrin, Mikhail Maximov

Storage and Retrieval for Image and Video Databases, 2005

View PDFchevron_right

Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well

Han Htoon

2007

View PDFchevron_right

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

Ian Sellers

Applied Physics Letters, 2002

View PDFchevron_right

High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers

Laura Fortunato

IEEE Photonics Technology Letters, 2006

View PDFchevron_right

1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Prof. HC Kuo

2006

View PDFchevron_right

Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures

N. Pikhtin

Semiconductors, 2011

View PDFchevron_right

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Alwyn Seeds

Optics express, 2011

View PDFchevron_right

Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures

Georgiy Polupan

Journal of Materials Science: Materials in Electronics, 2017

View PDFchevron_right

Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation

Binita Tongbram

Journal of Luminescence, 2020

View PDFchevron_right

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

Dieter Bimberg

IEEE Photonics Technology Letters, 1999

View PDFchevron_right

High power(>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor laser

Maciej Bugajski

Optica Applicata

View PDFchevron_right

Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers

Kenneth Kennedy

IEEE Journal of Selected Topics in Quantum Electronics, 2000

View PDFchevron_right

Promising features of In$_{0.5}$Ga$_{0.5}$N/Al$_{0.2}$Ga$_{0.8}$N quantum dot lasers

Boucif Benichou

TURKISH JOURNAL OF PHYSICS, 2017

View PDFchevron_right

High-Power Tunnel-Injection 1060-nm InGaAs–(Al)GaAs Quantum-Dot Lasers

Emil Mihai Pavelescu

IEEE Photonics Technology Letters, 2009

View PDFchevron_right

High power lasers based on submonolayer InAs–GaAs quantum dots and InGaAs quantum wells

Alexey Kovsh

2003

View PDFchevron_right